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Renesas AT45DB021E-SSHN-B

Part No.:
AT45DB021E-SSHN-B
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAT45DB021E-SSHN-B.pdf
Description:
IC FLASH 2MBIT SPI 70MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:25,554

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Product details

Overview

AT45DB021E-SSHN-B from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, up to 85 MHz clock rate, and featuring a 264-byte page size (default), one 256/264-byte SRAM buffer, and hardware/software sector protection. It enables reliable firmware storage and data logging in space-constrained embedded systems.

For engineers reviewing the AT45DB021E-SSHN-B datasheet, AT45DB021E-SSHN-B pinout, AT45DB021E-SSHN-B application, or AT45DB021E-SSHN-B equivalent, this page delivers verified electrical specs, SPI command behavior, power-down current values, sector lockdown capability, and real-world use cases in industrial control and IoT edge nodes.

Technical Context

The AT45DB021E-SSHN-B implements a dual-buffer architecture with one main memory array (1,024 pages × 256/264 bytes) and a dedicated SRAM buffer for read-modify-write operations. Its RapidS™ interface supports high-frequency continuous array reads using opcode 0Bh, achieving ≤6 ns clock-to-output delay.

It executes self-timed program/erase operations-including page (256/264 B), block (2 kB), sector (32 kB), and chip erase-with suspend/resume capability. Protection is enforced via hardware WP pin control and software-configurable Sector Protection and Lockdown Registers, plus a 128-byte OTP Security Register containing 64 bytes of factory-unique ID.

Key Specifications

Parameter Value and Actual Design Meaning
Memory capacity 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 pages of 256 or 264 bytes - enables flexible firmware partitioning and E2PROM emulation.
Supply voltage 1.65 V to 3.6 V single supply - supports direct integration with low-voltage microcontrollers without level-shifting.
Max clock frequency 85 MHz (RapidS™ mode) - delivers high-throughput sequential reads for real-time audio/image buffering.
Power consumption 200 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes and wearables.
Endurance & retention 100,000 program/erase cycles per page minimum; 20-year data retention - suitable for field-updatable industrial firmware.
Interface standard SPI-compatible, modes 0 and 3 - ensures interoperability with ARM Cortex-M, RISC-V, and legacy MCU families.
Page size User-configurable: 264 bytes (default) or factory-set 256 bytes - balances payload efficiency and alignment for embedded filesystems.

Pinout & Package

AT45DB021E-SSHN-B uses an 8-lead SOIC 150-mil wide package (JEDEC MS-012AA). All pins are electrically defined and validated per Renesas DS-AT45DB021E-8789 Rev. N.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select input Active-low enable; must transition high→low to initiate command, low→high to terminate - critical for multi-device SPI bus arbitration.
SCK Serial clock input Clocks all data transfers; SI latched on rising edge, SO driven on falling edge - defines timing margin for PCB trace length matching.
SI Serial data input Accepts commands, addresses, and write data; ignored when CS is high - requires clean setup/hold timing relative to SCK.
SO Serial data output Drives read data, status, and register contents; high-impedance when CS is deasserted - prevents bus contention in shared SPI configurations.
WP Write protect input Hardware lock for protected sectors; asserted low to prevent accidental program/erase - used with sector protection register for secure boot partitions.
RESET Hardware reset input Asynchronous active-low reset; forces device into known state independent of SPI activity - essential for recovery after brown-out or watchdog timeout.
VCC Power supply 1.65–3.6 V core supply; decoupling capacitor required within 1 cm - determines maximum achievable clock speed and power-down leakage.
GND Ground reference Return path for all I/O and core currents; must be low-impedance and tied to system ground plane - impacts noise immunity during high-speed reads.

Key Features

Feature Design Value
RapidS™ high-speed read mode Enables continuous array reads at up to 85 MHz with 6 ns tV - reduces firmware load latency by >4× vs. standard SPI Flash.
SRAM buffer + read-modify-write Single 256/264-byte buffer supports atomic byte-level updates without full-page erase - eliminates wear leveling overhead in parameter storage.
Multi-level sector protection Software-programmable Sector Protection Register + hardware WP pin + permanent sector lockdown - secures bootloader and calibration data against corruption.
Ultra-low power states 200 nA ultra-deep power-down and 3 µA deep power-down - allows >10-year battery operation in maintenance-free remote sensors.
Factory-unique 64-byte ID Pre-programmed identifier in OTP Security Register - enables device authentication and secure key derivation in IoT edge devices.

Applications

Firmware Storage Data Logging

Use Scenario: Storing boot code, application firmware, and configuration tables in a resource-constrained industrial PLC.

IC Role / Device Role / Timing Role: Nonvolatile serial code storage with fast read access and in-system reprogrammability via SPI.

Use Value: Eliminates need for external level shifters or high-voltage programming circuitry; supports field updates over RS-485 or CAN bus.

Use Scenario: Capturing sensor readings (temperature, pressure, vibration) at 1 kHz in a predictive maintenance gateway.

IC Role / Device Role / Timing Role: High-endurance sequential write buffer with page-erase granularity and low-power sleep modes.

Use Value: Achieves 100,000+ write cycles per page; ultra-deep power-down extends battery life beyond 5 years.

Secure Boot Partition Audio/Image Buffering

Use Scenario: Isolating immutable bootloader code from field-upgradable application firmware in medical diagnostic equipment.

IC Role / Device Role / Timing Role: Hardware-locked sector storing signed boot image, verified before execution.

Use Value: Sector lockdown prevents tampering; factory-unique ID enables cryptographic binding to secure element.

Use Scenario: Streaming compressed voice prompts or UI graphics in a smart home hub with limited RAM.

IC Role / Device Role / Timing Role: High-bandwidth sequential read memory accessed via RapidS™ mode for zero-latency playback.

Use Value: 85 MHz clock rate sustains >10 MB/s sustained read throughput - sufficient for real-time MP3 decode and display refresh.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q20EW 2 Mbit SPI NOR Flash; no SRAM buffer; no RapidS™; 133 MHz max clock; 4 KB uniform sectors only. Lacks read-modify-write capability and sector lockdown; requires external wear leveling for parameter storage. Choose for cost-sensitive designs where firmware integrity is managed externally and high-speed streaming is not required.
Macronix MX25L2006E 2 Mbit SPI NOR Flash; no buffer; no RapidS™; 80 MHz max clock; supports quad SPI but no continuous array read optimization. No built-in E2PROM emulation; lacks OTP security register and factory-unique ID. Prefer when migrating from legacy DataFlash designs that don't require buffer-assisted atomic writes or cryptographic device identity.

Compared with W25Q20EW and MX25L2006E, the AT45DB021E-SSHN-B uniquely integrates a dedicated SRAM buffer for true byte-alterable storage, RapidS™ for deterministic high-speed reads, and hardware-enforced sector lockdown - making it optimal for secure, field-updatable embedded systems requiring both code and data persistence.

Availability

AT45DB021E-SSHN-B is available at Aetrix Electronics and suitable for industrial control, medical diagnostics, and IoT edge node applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT45DB021E-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT45DB021E belongs to Renesas' DataFlash family, designed specifically for embedded systems needing reliable, low-pin-count, low-voltage serial memory with integrated buffer-based E2PROM emulation and robust security features.

FAQ

What is the default page size of the AT45DB021E-SSHN-B?

The AT45DB021E-SSHN-B ships with a default page size of 264 bytes. This can be factory pre-configured to 256 bytes upon order - confirmed in Renesas DS-AT45DB021E-8789 Rev. N, Section 13. The 264-byte layout includes 8 bytes of overhead for ECC or metadata, enabling robust firmware storage with built-in error detection.

Does the AT45DB021E-SSHN-B support true byte-level writes without erasing entire pages?

Yes - the AT45DB021E-SSHN-B supports true byte-level alteration via its built-in read-modify-write operation. Using the SRAM buffer, it reads a page, modifies selected bytes, then writes back - all in a single self-contained command sequence (Section 8.10). This eliminates external wear leveling and enables E2PROM-like behavior without full-page erase delays.

How does the RapidS™ mode improve performance over standard SPI reads?

RapidS™ mode in the AT45DB021E-SSHN-B enables continuous array reads at up to 85 MHz with ≤6 ns clock-to-output time (tV), significantly exceeding standard SPI Flash speeds. Unlike legacy opcodes (E8h), RapidS™ uses opcode 0Bh and eliminates inter-byte gaps - delivering sustained throughput ideal for audio streaming and firmware loading in real-time systems.

What security mechanisms does the AT45DB021E-SSHN-B provide for protecting firmware?

The AT45DB021E-SSHN-B provides three-tiered firmware protection: (1) hardware WP pin for physical write disable, (2) software-configurable Sector Protection Register for selective sector locking, and (3) irreversible Sector Lockdown Register for permanent read-only enforcement. These are documented in Sections 9 and 10 of the official datasheet.

Is the AT45DB021E-SSHN-B compatible with standard SPI controllers?

Yes - the AT45DB021E-SSHN-B is fully SPI-compatible and operates in standard modes 0 and 3. It uses standard SI/SO/SCK/CS signals, requires no special drivers, and supports JEDEC-standard Manufacturer and Device ID reads (opcode 9Fh), ensuring drop-in compatibility with existing SPI host firmware stacks.

AT45DB021E-SSHN-B Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Active
Programmable:
Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
2Mbit
Memory Organization:
264 Bytes x 1024 pages
Memory Interface:
SPI
Clock Frequency:
70 MHz
Write Cycle Time - Word, Page:
8µs, 3ms
Access Time:
-
Voltage - Supply:
1.65V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT45DB021E-SSHN-B FAQ

1.How can I place an order for AT45DB021E-SSHN-B through Aetrix?

Please submit a Request for Quotation (RFQ) for AT45DB021E-SSHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT45DB021E-SSHN-B reliable?

The price and inventory of AT45DB021E-SSHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-SSHN-B is usually 5 days.

3.What payment methods are accepted for AT45DB021E-SSHN-B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-SSHN-B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT45DB021E-SSHN-B?

AT45DB021E-SSHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT45DB021E-SSHN-B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT45DB021E-SSHN-B?

For technical support, including AT45DB021E-SSHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-SSHN-B requirements.

6.How does Aetrix verify that AT45DB021E-SSHN-B is sourced from the original manufacturer or authorized distributors?

All AT45DB021E-SSHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-SSHN-B meets industry standards.

7.What is the process for return or replacement of AT45DB021E-SSHN-B?

All AT45DB021E-SSHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-SSHN-B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT45DB021E-SSHN-B part is unused and in its original packaging.

Return procedure for AT45DB021E-SSHN-B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT45DB021E-SSHN-B Tags

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