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Renesas AT45DB021E-SSHN-T
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- Part No.:
- AT45DB021E-SSHN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT45DB021E-SSHN-T.pdf
- Description:
- IC FLASH 2MBIT SPI 70MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:8,860
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Product details
Overview
AT45DB021E-SSHN-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with 64 kbits extra security space, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, RapidS™ high-speed interface up to 85 MHz, and featuring a 256/264-byte SRAM buffer for E2PROM emulation. It enables low-pin-count, low-power firmware storage in embedded microcontrollers and voice recorders.
For engineers reviewing the AT45DB021E-SSHN-T datasheet, AT45DB021E-SSHN-T pinout, AT45DB021E-SSHN-T application, or AT45DB021E-SSHN-T equivalent, this page delivers verified electrical specs, SPI command behavior, sector protection configuration, power-down current values, and real-world use cases in industrial firmware logging and secure boot code storage.
Technical Context
The AT45DB021E-SSHN-T implements a dual-buffered sequential-access Flash architecture with one 256/264-byte SRAM buffer and main memory organized as 1,024 pages. Its RapidS™ mode supports continuous read at up to 85 MHz with 6 ns clock-to-output time (tV), while low-power read mode operates at ≤15 MHz with reduced active current.
It supports hardware and software sector protection, individual sector lockdown, and a 128-byte OTP Security Register containing 64 bytes of factory-unique ID and 64 bytes user-programmable space. Program/erase suspend/resume and self-timed operations eliminate external timing control requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 2,162,688 bits (2 Mbit main + 64 kbit security register) |
| Page size | 256 or 264 bytes - configurable at factory; determines address alignment and buffer usage |
| Max clock frequency | 85 MHz in RapidS™ mode - enables >10 MB/s continuous read throughput |
| Ultra-deep power-down current | 200 nA typical - preserves battery life in always-on sensor nodes |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention at 85°C |
| Operating voltage | 1.65 V to 3.6 V - compatible with single-cell Li-ion, coin cell, and 3.3 V logic rails |
| Temperature range | –40°C to +85°C - qualified for industrial-grade embedded deployment |
Pinout & Package
AT45DB021E-SSHN-T is supplied in an 8-lead SOIC 208-mil wide package (JEDEC MS-012AA). Pin 1 is CS; pin 2 is SCK; pin 3 is SI; pin 4 is SO; pin 5 is GND; pin 6 is VCC; pin 7 is RESET; pin 8 is WP.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition high-to-low to initiate command, low-to-high to terminate; controls SO high-impedance state |
| SCK | Serial Clock | Input clock; latches SI on rising edge, clocks SO on falling edge; defines SPI timing compliance (modes 0/3) |
| SI | Serial Input | Command/address/data input; ignored when CS is deasserted; supports all instruction opcodes including 0Bh (RapidS read) |
| SO | Serial Output | Data output; high-impedance when CS is high; delivers status, memory contents, or register values |
| WP | Write Protect | Hardware sector lock override; when asserted, prevents program/erase on protected sectors regardless of software settings |
| RESET | Hardware Reset | Active-low asynchronous reset; forces device into known state without power cycle; required for recovery after brown-out |
Key Features
| Feature | Design Value |
|---|---|
| RapidS™ high-speed read | 85 MHz continuous array read with 6 ns tV - eliminates wait states in real-time audio streaming |
| User-configurable page size | Factory-set 256 or 264 bytes - aligns with legacy firmware partitioning or optimizes buffer reuse efficiency |
| Program/erase suspend/resume | Interruptible erase cycles - allows servicing time-critical interrupts without data corruption risk |
| 128-byte OTP Security Register | 64-byte factory UID + 64-byte user field - enables secure key binding and anti-cloning in IoT endpoints |
| Deep Power-Down modes | 3 µA deep PD / 200 nA ultra-deep PD - extends shelf life and battery runtime in maintenance-free deployments |
Applications
| Firmware Storage | Secure Boot Code |
|---|---|
|
Use Scenario: Storing MCU application firmware and bootloader images in resource-constrained industrial controllers. IC Role / Device Role / Timing Role: Serial Flash memory providing non-volatile storage for XIP-capable or load-on-boot code execution. Use Value: 256/264-byte page granularity and RapidS™ read support reduce boot latency by enabling burst reads aligned to cache lines. |
Use Scenario: Holding immutable root-of-trust keys and signed boot images in medical diagnostic devices. IC Role / Device Role / Timing Role: Secure storage element with sector lockdown and OTP register preventing unauthorized modification. Use Value: Factory-programmed 64-byte unique ID binds firmware to hardware; sector lockdown ensures boot code integrity across lifecycle. |
| Voice Recorder Buffer | Industrial Data Logger |
|
Use Scenario: Capturing analog voice samples via ADC and buffering in SRAM before Flash write in portable recorders. IC Role / Device Role / Timing Role: Dual-function device: SRAM buffer for real-time capture + Flash for persistent storage. Use Value: On-chip 256/264-byte SRAM eliminates external RAM; read-modify-write enables byte-level updates without full-page erasure. |
Use Scenario: Logging sensor telemetry (temperature, pressure) at 1 Hz in remote environmental monitoring nodes. IC Role / Device Role / Timing Role: Low-power non-volatile memory managing cyclic overwrite of fixed-size data blocks. Use Value: 200 nA ultra-deep power-down current extends 10-year battery life; sector protection prevents accidental log corruption. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB021D-SSHN-T | Previous revision with identical pinout and command set but lower max clock (66 MHz); no RapidS™ mode | Lacks 85 MHz read capability and 6 ns tV - unsuitable for real-time audio streaming or high-throughput firmware loads | Select AT45DB021E-SSHN-T when RapidS™ performance or updated endurance spec (100k vs. 50k cycles) is required. |
| W25Q20EWUXIE | 2 Mbit Quad SPI Flash; supports QPI/DTR; no integrated SRAM buffer or RapidS™; different command set | Requires quad I/O routing and separate buffer management logic; lacks E2PROM emulation and sector lockdown features | Choose W25Q20EWUXIE only if system already uses Quad SPI infrastructure and does not require SRAM-assisted byte writes. |
Compared with AT45DB021D-SSHN-T and W25Q20EWUXIE, the AT45DB021E-SSHN-T uniquely combines high-speed serial read, on-die SRAM for E2PROM emulation, and hardware-enforced sector lockdown-enabling simpler firmware update architectures and stronger security in cost-sensitive industrial designs.
Availability
AT45DB021E-SSHN-T is available at Aetrix Electronics and suitable for firmware storage, secure boot code, voice recorder buffers, and industrial data loggers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT45DB021E-SSHN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The AT45DB021E-SSHN-T belongs to Renesas' DataFlash family, designed specifically for systems needing reliable, low-voltage, low-pin-count serial Flash with integrated buffer and advanced security features for embedded firmware and data logging.
FAQ
What is the maximum operating frequency of the AT45DB021E-SSHN-T in RapidS™ mode?
The AT45DB021E-SSHN-T supports up to 85 MHz in RapidS™ mode, enabling high-throughput continuous array reads. This is confirmed in the datasheet's AC characteristics table and applies specifically to the AT45DB021E-SSHN-T revision with RapidS™ enabled. The clock-to-output time (tV) is guaranteed at 6 ns maximum under these conditions.
Does the AT45DB021E-SSHN-T support true byte-level programming without erasing the entire page?
No - the AT45DB021E-SSHN-T does not support true random byte programming. However, it provides a three-step read-modify-write operation using its internal SRAM buffer, allowing byte or bit alterations without external RAM. This emulates E2PROM functionality while retaining Flash density and cost advantages.
How is sector protection implemented on the AT45DB021E-SSHN-T?
The AT45DB021E-SSHN-T implements sector protection via a dedicated Sector Protection Register (SPR) and hardware WP pin. Software can individually lock/unlock sectors using opcodes 3Dh/3Fh; the WP pin overrides all software settings when asserted. Sector lockdown (opcode 3Ch) makes protection permanent and irreversible.
What power-down modes does the AT45DB021E-SSHN-T support, and what are their current draws?
The AT45DB021E-SSHN-T supports Deep Power-Down (3 µA typical) and Ultra-Deep Power-Down (200 nA typical). Both modes retain memory contents and are exited via CS toggle or RESET assertion. These values are measured per the datasheet's DC characteristics table and apply to the AT45DB021E-SSHN-T at 25°C.
Is the AT45DB021E-SSHN-T pin-compatible with earlier AT45DB021x variants?
Yes - the AT45DB021E-SSHN-T maintains identical 8-lead SOIC 208-mil pinout, signal definitions, and command set compatibility with AT45DB021D-SSHN-T and AT45DB021C-SSHN-T. However, RapidS™ mode and updated endurance (100k cycles) are exclusive to the AT45DB021E-SSHN-T revision.
AT45DB021E-SSHN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 264 Bytes x 1024 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB021E-SSHN-T FAQ
1.How can I place an order for AT45DB021E-SSHN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB021E-SSHN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB021E-SSHN-T reliable?
The price and inventory of AT45DB021E-SSHN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-SSHN-T is usually 5 days.
3.What payment methods are accepted for AT45DB021E-SSHN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-SSHN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB021E-SSHN-T?
AT45DB021E-SSHN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB021E-SSHN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB021E-SSHN-T?
For technical support, including AT45DB021E-SSHN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-SSHN-T requirements.
6.How does Aetrix verify that AT45DB021E-SSHN-T is sourced from the original manufacturer or authorized distributors?
All AT45DB021E-SSHN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-SSHN-T meets industry standards.
7.What is the process for return or replacement of AT45DB021E-SSHN-T?
All AT45DB021E-SSHN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-SSHN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB021E-SSHN-T part is unused and in its original packaging.
Return procedure for AT45DB021E-SSHN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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