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Renesas AT45DB021E-UUN2B-T
- Part No.:
- AT45DB021E-UUN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFBGA, WLCSP
- Datasheet:
-
AT45DB021E-UUN2B-T.pdf
- Description:
- IC FLASH 2MBIT SPI 70MHZ 8WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:3,362
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Product details
Overview
AT45DB021E-UUN2B-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, supporting SPI modes 0 and 3 at up to 85 MHz, featuring 264-byte pages (default), 256/264-byte SRAM buffer, and ultra-deep power-down current of 200 nA (typ). It serves as nonvolatile storage for firmware boot code, configuration data, and voice/image buffers in space-constrained embedded systems.
For engineers reviewing the AT45DB021E-UUN2B-T datasheet, AT45DB021E-UUN2B-T pinout, AT45DB021E-UUN2B-T application, or AT45DB021E-UUN2B-T equivalent, key selection criteria include single-supply 1.65–3.6 V operation, RapidS™ high-speed read capability, programmable page size, sector lockdown security, and industrial-temperature support in 8-pad UDFN (5 × 6 × 0.6 mm) packaging.
Technical Context
The AT45DB021E-UUN2B-T implements a dual-buffer architecture with one 256/264-byte SRAM buffer enabling read-modify-write operations without external RAM. Its sequential-access Flash array (1,024 pages × 256/264 bytes) eliminates parallel address bus overhead and reduces PCB routing complexity.
It supports three distinct erase granularities-page (256/264 B), block (2 kB), and sector (32 kB)-with chip erase covering the full 2 Mbits. Hardware and software protection includes individual sector lockdown, OTP security register (128 B), and JEDEC-standard manufacturer/device ID readout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 pages of 256 or 264 bytes |
| Supply voltage | 1.65 V to 3.6 V - enables direct interface with low-voltage MCUs without level shifters |
| Max clock frequency | 85 MHz - supports high-throughput firmware loading and real-time audio streaming |
| Power-down current | 200 nA (ultra-deep), 3 µA (deep), 25 µA (standby) - extends battery life in always-on IoT edge nodes |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention - suitable for field-upgradable devices |
| Operating temperature | −40 °C to +85 °C - certified for industrial-grade deployment without thermal derating |
| Interface standard | SPI-compatible (modes 0 and 3), RapidS™-enabled - ensures interoperability with ARM Cortex-M, RISC-V, and legacy controllers |
Pinout & Package
AT45DB021E-UUN2B-T is packaged in an 8-pad Ultra-thin DFN (5 × 6 × 0.6 mm) with exposed pad (non-connected or GND option). Pin 1 = RESET, Pin 2 = SCK, Pin 3 = SI, Pin 4 = CS, Pin 5 = SO, Pin 6 = GND, Pin 7 = VCC, Pin 8 = WP.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition low-to-high only after command completion to avoid premature deselection during self-timed erase/program |
| SCK | Serial Clock | Input clock; rising edge latches SI data, falling edge clocks SO data - defines timing budget for max 85 MHz operation |
| SI | Serial Input | Command/address/data input; ignored when CS is high - requires clean signal integrity for reliable opcode decoding |
| SO | Serial Output | Data output; high-impedance when CS is high - allows multi-device SPI bus sharing with pull-up resistors |
| WP | Write Protect | Hardware sector lock control; assertion blocks program/erase on protected sectors - used with Sector Protection Register for secure firmware partitioning |
| RESET | Hardware Reset | Active-low asynchronous reset; forces device into known state independent of SPI activity - critical for recovery after brown-out |
| VCC | Power Supply | 1.65–3.6 V supply; decoupling capacitor required within 1 cm to meet AC noise specs during rapid switching |
| GND | Ground Reference | Return path for all I/O and core logic; shared with exposed pad (if connected) to improve thermal dissipation and EMI performance |
Key Features
| Feature | Design Value |
|---|---|
| RapidS™ high-speed read | Enables continuous array reads at up to 85 MHz with 6 ns clock-to-output delay - cuts firmware load time by >3× vs. standard SPI Flash |
| User-configurable page size | Factory-set to 264 bytes (default) or 256 bytes - optimizes buffer usage for E2PROM emulation or fixed-sector alignment |
| Program/erase suspend/resume | Allows interrupting long erase cycles to service urgent read requests - essential for real-time systems with mixed latency requirements |
| 128-byte OTP Security Register | Contains 64-byte factory UID + 64-byte user-programmable space - supports secure boot key binding and device identity attestation |
| Individual sector lockdown | Makes any sector permanently read-only after freeze command - prevents accidental or malicious overwrite of bootloader or calibration data |
| Three erase granularities | Page (256/264 B), block (2 kB), sector (32 kB) - enables fine-grained wear leveling and partial firmware updates without full chip erase |
Applications
| Industrial HMI Firmware Storage | Medical Sensor Data Logger |
|---|---|
Use Scenario: Storing boot firmware, GUI assets, and calibration tables in panel-mounted HMIs with limited board area and no external RAM. IC Role / Device Role / Timing Role: Nonvolatile sequential-access memory providing fast SPI-boot code fetch and buffered configuration updates. Use Value: 85 MHz RapidS™ read speed reduces boot time to <100 ms; 264-byte page size aligns with typical display tile dimensions for efficient asset streaming. | Use Scenario: Capturing timestamped physiological waveforms (ECG, SpO₂) in portable diagnostic devices powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power data sink with integrated SRAM buffer enabling burst capture and background flash write. Use Value: 200 nA ultra-deep power-down current extends battery life to >5 years; sector lockdown protects FDA-mandated calibration records from tampering. |
| Smart Meter Firmware Vault | Automotive Telematics Event Recorder |
Use Scenario: Securely storing utility firmware images, tariff tables, and cryptographic keys in ANSI C12.19-compliant smart meters deployed in harsh outdoor environments. IC Role / Device Role / Timing Role: Tamper-resistant, temperature-hardened Flash with hardware write protection and OTP UID for firmware authentication. Use Value: −40 °C to +85 °C operation ensures reliability across climates; 128-byte OTP register binds firmware signature to unique device identity. | Use Scenario: Recording CAN bus diagnostics, GPS coordinates, and crash-triggered sensor snapshots in automotive black-box modules. IC Role / Device Role / Timing Role: High-reliability sequential memory supporting rapid page writes during transient events and robust sector-level erase for cyclic logging. Use Value: 100,000-cycle endurance per page withstands frequent overwrites; block erase (2 kB) enables fast ring-buffer rotation without disturbing adjacent event logs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q20EW | 2 Mbit Quad SPI (QSPI), no SRAM buffer, no RapidS™, 133 MHz max clock, 1.65–1.95 V supply only | Lacks sequential-access optimization and E2PROM emulation capability; requires QSPI controller support | Select when system uses QSPI interface and prioritizes raw bandwidth over buffer-assisted byte-alterability |
| Macronix MX25L2006E | 2 Mbit standard SPI, no SRAM buffer, no RapidS™, 80 MHz max clock, 2.7–3.6 V supply only | No ultra-low-power deep-sleep mode (min 1 µA vs. AT45DB021E's 200 nA); no sector lockdown or OTP register | Select for cost-sensitive industrial designs where extended battery life and cryptographic security are not required |
Compared with W25Q20EW and MX25L2006E, AT45DB021E-UUN2B-T uniquely combines SRAM buffer-based E2PROM emulation, RapidS™ acceleration, and hardware-enforced sector lockdown - making it optimal for firmware-critical, battery-powered, and security-sensitive embedded deployments.
Availability
AT45DB021E-UUN2B-T is available at Aetrix Electronics and suitable for industrial HMI firmware storage, medical sensor data logging, smart meter firmware vaults, automotive telematics recorders, and secure boot applications requiring stable component supply across extended product lifecycles.
Supply support for AT45DB021E-UUN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The AT45DB021E belongs to Renesas' DataFlash family, engineered specifically for systems needing high-density, low-pin-count, low-voltage serial Flash with integrated SRAM buffer and advanced security features - targeting firmware storage, secure boot, and real-time data logging.
FAQ
What is the default page size configuration for AT45DB021E-UUN2B-T?
The AT45DB021E-UUN2B-T is factory pre-configured with a default page size of 264 bytes. This setting supports both legacy DataFlash compatibility and enhanced buffer utilization for E2PROM emulation. The page size can be reconfigured to 256 bytes via the Buffer and Page Size Configuration command (0x3D), but this change is irreversible and must be performed before initial programming. AT45DB021E-UUN2B-T retains this setting across power cycles.
Does AT45DB021E-UUN2B-T support true byte-level programming without erasing the entire page?
No, AT45DB021E-UUN2B-T does not support true byte-level programming. However, it enables E2PROM-like behavior through a self-contained three-step read-modify-write operation using its internal 256/264-byte SRAM buffer. This process reads a full page into the buffer, modifies selected bytes, then writes the updated buffer back to main memory - preserving unaltered data without requiring external RAM. AT45DB021E-UUN2B-T performs this entirely on-die.
How does the RapidS™ feature improve performance compared to standard SPI read commands?
RapidS™ in AT45DB021E-UUN2B-T reduces instruction overhead and enables continuous high-frequency reads using opcode 0x0B, achieving up to 85 MHz clock rates with 6 ns clock-to-output delay. Unlike legacy opcodes (e.g., 0xE8), RapidS™ eliminates inter-byte gaps and supports automatic address incrementing across the full memory array. AT45DB021E-UUN2B-T delivers sustained throughput exceeding 80 MB/s in high-frequency mode, cutting firmware load times significantly.
Can AT45DB021E-UUN2B-T be used in systems requiring secure device identity and firmware authentication?
Yes, AT45DB021E-UUN2B-T includes a 128-byte One-Time Programmable (OTP) Security Register with 64 bytes factory-programmed as a unique identifier and 64 bytes user-programmable. This register supports cryptographic binding of firmware signatures to hardware identity. Combined with sector lockdown and hardware write protection (WP pin), AT45DB021E-UUN2B-T provides foundational elements for secure boot and anti-cloning in regulated applications.
What package type is used for the AT45DB021E-UUN2B-T variant?
AT45DB021E-UUN2B-T uses an 8-pad Ultra-thin DFN package measuring 5 mm × 6 mm × 0.6 mm. This compact, leadless package features an exposed metal pad on the bottom that is not internally connected but may be left floating or tied to GND for improved thermal and EMI performance. The "UUN2B" suffix explicitly denotes this UDFN variant per Renesas' ordering information.
AT45DB021E-UUN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 256 Bytes x 1024 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WLCSP (1.9x1.4)
AT45DB021E-UUN2B-T FAQ
1.How can I place an order for AT45DB021E-UUN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB021E-UUN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB021E-UUN2B-T reliable?
The price and inventory of AT45DB021E-UUN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-UUN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB021E-UUN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-UUN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB021E-UUN2B-T?
AT45DB021E-UUN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB021E-UUN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB021E-UUN2B-T?
For technical support, including AT45DB021E-UUN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-UUN2B-T requirements.
6.How does Aetrix verify that AT45DB021E-UUN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB021E-UUN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-UUN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB021E-UUN2B-T?
All AT45DB021E-UUN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-UUN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB021E-UUN2B-T part is unused and in its original packaging.
Return procedure for AT45DB021E-UUN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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