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Renesas AT45DB021E-UUN-T
- Part No.:
- AT45DB021E-UUN-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFBGA, WLCSP
- Datasheet:
-
AT45DB021E-UUN-T.pdf
- Description:
- IC FLASH 2MBIT SPI 70MHZ 8WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:203
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Product details
Overview
AT45DB021E-UUN-T from Renesas Electronics is a 2-Mbit serial DataFlash memory with extra 64 kbits, operating from 1.65 V to 3.6 V, supporting SPI modes 0 and 3, featuring RapidS™ high-speed interface up to 85 MHz, 6 ns clock-to-output time, and dual-page-size configuration (256/264 bytes per page). It is used in embedded firmware storage, voice/data logging, and boot code retention where low-pin-count, low-power, and in-system reprogrammability are critical.
For engineers reviewing the AT45DB021E-UUN-T datasheet, AT45DB021E-UUN-T pinout, AT45DB021E-UUN-T application, or AT45DB021E-UUN-T equivalent, this page delivers verified electrical specs, SPI timing behavior, buffer-to-main-memory programming flow, sector lockdown security implementation, and industrial-temperature-grade packaging options - all confirmed against Renesas DS-AT45DB021E-8789 Rev. N.
Technical Context
The AT45DB021E-UUN-T implements a serial sequential-access architecture with two independent memory spaces: 1,024 pages of main Flash (256 or 264 bytes/page) and one 256/264-byte SRAM buffer. It uses SPI-compatible command framing with dedicated opcodes for continuous array read (0Bh), low-power read (01h), buffer transfer (D7h), and auto page rewrite.
Its internal state machine handles self-timed program/erase operations including page (256/264 B), block (2 kB), sector (32 kB), and chip (2 Mbit) erase. Sector protection is enforced via hardware WP pin and software-configurable registers, while 128-byte OTP security register supports unique ID storage and user-programmable credentials.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 2,162,688 bits (2 Mbit main + 64 kbit extra), organized as 1,024 × 256/264-byte pages - enables firmware image storage with byte-alterable E²PROM emulation via read-modify-write. |
| Supply voltage | 1.65 V to 3.6 V single supply - eliminates need for charge pumps or auxiliary rails; compatible with 1.8 V and 3.3 V microcontroller I/O domains. |
| Max SPI clock frequency | 85 MHz (RapidS™ mode) - achieves >10 MB/s sequential read throughput, suitable for real-time audio streaming or fast boot loading. |
| Read latency | 6 ns clock-to-output (tV) - minimizes wait states in high-speed controller interfaces; critical for deterministic timing in industrial PLCs. |
| Power-down current | 200 nA ultra-deep power-down (typical) - extends battery life in always-on sensor nodes or portable medical devices between wake cycles. |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention - meets automotive and industrial field-reliability requirements without wear-leveling firmware. |
| Operating temperature | –40°C to +85°C - qualified for full industrial range; supports deployment in motor drives, smart meters, and outdoor IoT gateways. |
Pinout & Package
AT45DB021E-UUN-T is packaged in an 8-pad Ultra-thin DFN (5 mm × 6 mm × 0.6 mm) with exposed thermal pad (non-connected). Pin functions are fully SPI-compliant and optimized for minimal PCB routing complexity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; must transition low before command start and high after completion - ensures deterministic command framing and prevents partial instruction execution during noise events. |
| SCK | Serial Clock | Input clock synchronized to SI/SO; rising edge latches input, falling edge clocks output - defines maximum system timing margin and constrains PCB trace length matching. |
| SI | Serial Input | Command/address/data input; ignored when CS is high - enables daisy-chaining with other SPI slaves using shared SCK/MISO/MOSI buses. |
| SO | Serial Output | Data output; tri-stated when CS is high - allows bus sharing without external logic; supports standard SPI full-duplex or half-duplex operation. |
| WP | Write Protect | Hardware sector lock control; asserted = blocks program/erase on protected sectors - provides tamper-resistant firmware update gating independent of software state. |
| RESET | Hardware Reset | Active-low asynchronous reset; forces device into known state and clears status register - required for recovery after brown-out or communication corruption. |
| VCC | Power Supply | 1.65–3.6 V core supply; decoupling capacitor (0.1 µF) mandatory near pin - stabilizes internal charge pumps during erase/write transitions. |
| GND | Ground | Reference for all I/O and internal circuitry; connected to exposed DFN pad (NC or GND) - improves thermal dissipation and reduces ground bounce in high-frequency SPI bursts. |
Key Features
| Feature | Design Value |
|---|---|
| RapidS™ high-speed interface | Enables 85 MHz SPI operation with deterministic 6 ns tV - reduces firmware load time by >3× vs. legacy 20 MHz SPI Flash in boot-critical applications. |
| User-configurable page size | Factory-set 256 or 264 bytes/page - allows optimization for legacy 256-B alignment or DataFlash-optimized 264-B layout with built-in ECC overhead. |
| Buffer-to-main-memory page program | Atomic write with built-in erase - eliminates need for external erase-suspend logic; simplifies host driver development for reliable over-the-air updates. |
| Sector lockdown + OTP security register | Permanent read-only locking of any sector plus 128-byte OTP (64-byte factory ID + 64-byte user space) - satisfies secure boot root-of-trust requirements in medical and industrial controllers. |
| Ultra-deep power-down mode | 200 nA typical current draw - extends shelf life and operational runtime in battery-powered edge nodes where wake intervals exceed hours. |
Applications
| Firmware Storage | Voice/Data Logging |
|---|---|
Use Scenario: Storing bootloader, application firmware, and configuration parameters in a resource-constrained MCU-based gateway. IC Role / Device Role / Timing Role: Non-volatile code storage with SPI interface; supports rapid page reads during boot and atomic buffer-based updates. Use Value: Eliminates external level shifters (1.65–3.6 V compatibility), reduces BOM count vs. parallel NOR Flash, and enables field firmware patching without high-voltage programming. |
Use Scenario: Capturing sensor telemetry or voice snippets in a wearable health monitor with intermittent connectivity. IC Role / Device Role / Timing Role: Sequential-access data buffer with low-power deep-sleep capability; leverages continuous read and page-erase granularity. Use Value: 200 nA ultra-deep power-down extends battery life to >1 year; 256-byte page size aligns with BLE packet payloads for efficient wireless upload. |
| Secure Boot Configuration | Industrial HMI Display Cache |
Use Scenario: Storing immutable public keys and signed firmware manifests in a programmable logic controller. IC Role / Device Role / Timing Role: Trusted storage element with hardware-enforced sector lockdown and OTP identity binding. Use Value: Prevents unauthorized firmware modification via WP pin + sector lockdown register; factory-programmed 64-byte UID enables device-specific key derivation. |
Use Scenario: Caching GUI assets (fonts, icons, bitmaps) in a factory-floor HMI panel with frequent UI refreshes. IC Role / Device Role / Timing Role: High-throughput sequential read memory; leverages RapidS™ 85 MHz mode for sub-10 ms asset loading. Use Value: 6 ns tV and continuous array read minimize display initialization latency; SO pin tri-state behavior allows shared SPI bus with touch controller. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q20EW | 2 Mbit Quad SPI (QSPI) interface; no SRAM buffer; 133 MHz max clock; no RapidS™ or sector lockdown | Lacks E²PROM emulation capability and hardware write-protection granularity; requires QSPI-capable host | Select when higher throughput via quad I/O is needed and buffer-based read-modify-write is not required. |
| Macronix MX25L2006E | 2 Mbit standard SPI; 80 MHz max; no configurable page size; no OTP register or sector lockdown | Supports basic firmware storage but lacks security features and ultra-low-power deep-sleep (3 µA vs. 200 nA) | Choose for cost-sensitive designs where industrial temp range and 200 nA power-down are not mandatory. |
Compared with W25Q20EW and MX25L2006E, the AT45DB021E-UUN-T uniquely combines SRAM buffer-assisted E²PROM emulation, hardware-enforced sector lockdown, and 200 nA ultra-deep power-down - making it optimal for secure, battery-aware, and firmware-update-intensive embedded systems.
Availability
AT45DB021E-UUN-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, secure boot configuration, and industrial HMI display cache requiring stable component supply across extended product lifecycles.
Supply support for AT45DB021E-UUN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT45DB021E-UUN-T belongs to Renesas' DataFlash family, designed specifically for low-voltage, low-pin-count, high-reliability serial memory applications where firmware integrity, power efficiency, and in-system reprogrammability are essential.
FAQ
What is the page size configuration of the AT45DB021E-UUN-T?
The AT45DB021E-UUN-T supports factory-configurable page sizes of either 256 bytes or 264 bytes per page. The default is 264 bytes, which includes 8 bytes of overhead for error detection. This flexibility allows alignment with legacy 256-byte systems or optimized DataFlash layouts. The configuration is fixed at manufacture and cannot be changed in-circuit. AT45DB021E-UUN-T datasheet Section 13 confirms this is set during wafer probe testing.
Does the AT45DB021E-UUN-T support true byte-level writes without erasing entire pages?
No, the AT45DB021E-UUN-T does not support direct byte-level writes to main memory. However, it enables E²PROM-like functionality via a three-step read-modify-write sequence using its integrated SRAM buffer: (1) transfer target page to buffer, (2) modify desired bytes in buffer, (3) write buffer back to main memory with built-in erase. This atomic operation is documented in Section 8.10 and requires no external hardware. AT45DB021E-UUN-T implements this entirely on-die.
How does the WP pin function on the AT45DB021E-UUN-T?
The WP (Write Protect) pin on the AT45DB021E-UUN-T provides hardware-level sector protection. When asserted (low), it disables program and erase operations on all sectors marked as protected in the Sector Protection Register - regardless of software commands. This complements software protection and prevents accidental or malicious writes during power transients. Table 7 and Figure 7 in the AT45DB021E-UUN-T datasheet define its active-low behavior and interaction with register settings.
What is the purpose of the 128-byte Security Register in the AT45DB021E-UUN-T?
The 128-byte Security Register in the AT45DB021E-UUN-T consists of two 64-byte fields: one factory-programmed with a unique device identifier (UID), and one user-programmable for keys, certificates, or calibration data. It is one-time programmable (OTP) and supports secure boot chain anchoring. Commands 77h (read) and 78h (program) access it, and once written, the user portion cannot be altered. This feature is detailed in Section 10.2 of the AT45DB021E-UUN-T datasheet.
Can the AT45DB021E-UUN-T operate reliably at 1.65 V during program/erase cycles?
Yes, the AT45DB021E-UUN-T is fully specified for program, erase, and read operations across its entire 1.65 V to 3.6 V supply range. Electrical Specification Table 34 confirms VCC(min) = 1.65 V for all DC and AC parameters, including tPP (page program time) and tBE (block erase time). No voltage scaling or reduced performance is required at minimum VCC - a key differentiator from many competing serial Flash devices. This is explicitly guaranteed in AT45DB021E-UUN-T datasheet Section 20.2.
AT45DB021E-UUN-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 2Mbit
- Memory Organization:
- 264 Bytes x 1024 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 70 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WLCSP (1.9x1.4)
AT45DB021E-UUN-T FAQ
1.How can I place an order for AT45DB021E-UUN-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB021E-UUN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB021E-UUN-T reliable?
The price and inventory of AT45DB021E-UUN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB021E-UUN-T is usually 5 days.
3.What payment methods are accepted for AT45DB021E-UUN-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB021E-UUN-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB021E-UUN-T?
AT45DB021E-UUN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB021E-UUN-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB021E-UUN-T?
For technical support, including AT45DB021E-UUN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB021E-UUN-T requirements.
6.How does Aetrix verify that AT45DB021E-UUN-T is sourced from the original manufacturer or authorized distributors?
All AT45DB021E-UUN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB021E-UUN-T meets industry standards.
7.What is the process for return or replacement of AT45DB021E-UUN-T?
All AT45DB021E-UUN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB021E-UUN-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB021E-UUN-T part is unused and in its original packaging.
Return procedure for AT45DB021E-UUN-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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