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Renesas AT45DB041E-DWF
- Part No.:
- AT45DB041E-DWF
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- Die
- Datasheet:
-
AT45DB041E-DWF.pdf
- Description:
- 4 MBIT, WIDE VCC (1.65V TO 3.6V)
- Quantity:
- Payment:
- Shipping:
Inventory:4,107
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Product details
Overview
AT45DB041E-DWF from Renesas Electronics is a 4-Mbit serial DataFlash memory with two independent 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low deep power-down current of 400 nA. It enables continuous data streaming in embedded voice, firmware storage, and IoT sensor logging applications.
For engineers reviewing the AT45DB041E-DWF datasheet, AT45DB041E-DWF pinout, AT45DB041E-DWF application, or AT45DB041E-DWF equivalent, key selection criteria include page size configurability (256 vs. 264 bytes), buffer-to-memory program suspend/resume capability, sector lockdown security, and industrial temperature support (–40 °C to +85 °C).
Technical Context
The AT45DB041E-DWF implements a dual-buffered sequential-access Flash architecture optimized for SPI-based systems requiring concurrent read/write operations. Its RapidS™ mode supports high-frequency continuous array reads using opcodes 0Bh and 1Bh, achieving ≤6 ns clock-to-output time.
It features hardware- and software-controlled sector protection, 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable), and flexible erase granularity - page (256/264 B), block (2 kB), sector (64 kB), or full chip (4 Mbits) - all self-timed without external high-voltage programming.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4,194,304 bits (4 Mbits) organized as 2,048 pages × 256 or 264 bytes |
| Supply voltage | 1.65 V to 3.6 V single supply - enables direct interfacing with low-voltage MCUs without level shifters |
| Max SPI clock frequency | 85 MHz (RapidS™ mode) - supports high-throughput firmware updates and audio streaming |
| Power-down current | 400 nA typical ultra-deep power-down - extends battery life in always-on sensor nodes |
| Endurance & retention | 100,000 program/erase cycles and 20-year data retention at –40 °C to +85 °C |
| Page size option | User-configurable or factory pre-set to 256 bytes (standard binary alignment) or 264 bytes (DataFlash legacy) |
| Operating temperature | –40 °C to +85 °C industrial grade - validated for automotive body electronics and industrial controllers |
Pinout & Package
AT45DB041E-DWF is packaged in an 8-pad Ultra-thin DFN (5 × 6 × 0.6 mm) with exposed thermal pad (non-connected). Pin functions are defined per JEDEC-compliant serial Flash interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; places SO in high-Z when deasserted - enables multi-device SPI bus sharing |
| SCK | Serial Clock | Input timing reference for SPI transfers; supports modes 0 and 3 - compatible with most ARM Cortex-M and RISC-V MCUs |
| SI | Serial Input | Data input for commands, addresses, and write data - used for all command sequences and buffer writes |
| SO | Serial Output | Data output for reads and status registers - tri-stated when CS is high to prevent bus contention |
| WP | Write Protect | Hardware sector protection enable - locks protected sectors against accidental erase/program when asserted |
| RESET | Hardware Reset | Active-low asynchronous reset - forces device into known state without power cycle |
| VCC | Power Supply | 1.65–3.6 V core and I/O supply - eliminates need for separate I/O voltage rails |
| GND | Ground | Reference return path for VCC and all signals - shared analog/digital ground simplifies PCB layout |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (256/264 B each) | Enables true interleaved write: receive new data into one buffer while reprogramming main memory from the other - critical for real-time data loggers |
| RapidS™ high-speed read mode | Supports 85 MHz continuous array reads with opcodes 0Bh/1Bh - reduces firmware load latency by >3× vs. standard SPI Flash |
| Program/Erase suspend/resume | Allows pausing long erase or program operations to service urgent read requests - maintains system responsiveness |
| Individual sector lockdown | Makes any 64-kB sector permanently read-only after freeze command - prevents tampering with boot code or calibration data |
| 128-byte OTP Security Register | Contains 64-byte factory-unique ID + 64-byte user-programmable space - enables secure device authentication and license binding |
Applications
| Firmware Storage | Industrial Data Logging |
|---|---|
|
Use Scenario: Storing MCU boot code and field-upgradable application firmware in PLC controllers. IC Role / Device Role / Timing Role: Non-volatile program memory accessed via SPI during cold start and OTA update cycles. Use Value: 20-year data retention and 100K endurance ensure firmware integrity over product lifetime without refresh. |
Use Scenario: Continuous buffering of sensor readings (temperature, pressure, vibration) in predictive maintenance gateways. IC Role / Device Role / Timing Role: High-speed sequential write target using dual-buffer interleaving to sustain 1.2 MB/s effective throughput. Use Value: RapidS™ 85 MHz reads and suspend/resume allow background logging while servicing real-time control interrupts. |
| Secure Boot Authentication | Audio Voice Recording |
|
Use Scenario: Verifying cryptographic signatures of bootloader images before execution in medical diagnostic devices. IC Role / Device Role / Timing Role: Secure storage for public keys and signed hash values retrieved during secure boot sequence. Use Value: Sector lockdown and OTP register prevent runtime modification of root-of-trust assets. |
Use Scenario: Storing compressed voice prompts and alarm tones in smart home hubs and intercom systems. IC Role / Device Role / Timing Role: Low-power sequential playback memory accessed via continuous array read commands (01h/03h). Use Value: 400 nA ultra-deep power-down current minimizes standby drain during idle periods between voice events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4-Mbit SPI NOR Flash; no SRAM buffers; no RapidS™; max 104 MHz Quad SPI (not standard SPI); no sector lockdown | Lacks dual-buffering and suspend/resume - unsuitable for real-time streaming; requires Quad SPI controller | Choose for higher raw read speed in Quad SPI systems where buffer concurrency is unnecessary |
| Microchip SST26VF040A | 4-Mbit SPI Flash; no dedicated SRAM buffers; no RapidS™; supports 50 MHz standard SPI; includes 256-byte cache but no true dual-buffer interleaving | No hardware sector lockdown or OTP security register - weaker protection for boot code or credentials | Choose when legacy SST compatibility is required and security features are secondary |
Compared with W25Q40EW and SST26VF040A, the AT45DB041E-DWF uniquely delivers simultaneous buffer write + main memory reprogram, hardware-enforced sector lockdown, and sub-µA deep power-down - making it optimal for resource-constrained, security-critical, and real-time streaming applications.
Availability
AT45DB041E-DWF is available at Aetrix Electronics and suitable for firmware storage, industrial data logging, and secure boot authentication requiring stable component supply across extended product lifecycles.
Supply support for AT45DB041E-DWF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT45DB041E-DWF belongs to Renesas' DataFlash® family, designed specifically for systems needing high-reliability, low-pin-count, sequential-access non-volatile memory with integrated buffering and advanced security.
FAQ
What is the default page size configuration for the AT45DB041E-DWF?
The AT45DB041E-DWF ships with a default page size of 264 bytes, matching legacy DataFlash® addressing. However, it can be reconfigured to 256 bytes via the Buffer and Page Size Configuration command (Table 22), enabling binary-aligned addressing for easier integration with standard file systems and MCU drivers.
Does the AT45DB041E-DWF support true concurrent read and write operations?
Yes - the AT45DB041E-DWF uses two independent 256/264-byte SRAM buffers to enable true concurrency: one buffer can accept incoming data via SI while the other is being transferred to main memory. This interleaving avoids write bottlenecks during continuous streaming, a capability not found in standard SPI NOR Flash devices like the AT45DB041E-DWF's alternatives.
How does the sector lockdown feature work on the AT45DB041E-DWF?
The AT45DB041E-DWF allows permanent read-only locking of any 64-kB sector using the Sector Lockdown command (Table 14). Once frozen via the Freeze Sector Lockdown command, the sector cannot be erased or programmed - even by subsequent unlock attempts. This ensures immutable storage of boot code or calibration data, a hardware-enforced security mechanism absent in most competing serial Flash parts.
What is the purpose of the 128-byte Security Register in the AT45DB041E-DWF?
The AT45DB041E-DWF's 128-byte Security Register contains 64 bytes pre-programmed with a unique factory-assigned identifier and 64 bytes available for user programming. It serves as a tamper-resistant anchor for device authentication, license binding, and secure boot verification - accessible only via dedicated Read/Program Security Register commands (77h/D7h), with no overwrite capability after initial programming.
Can the AT45DB041E-DWF operate reliably at 1.65 V supply voltage?
Yes - the AT45DB041E-DWF is fully specified down to 1.65 V across its entire operating range (–40 °C to +85 °C), including all program, erase, and read operations. Its 400 nA ultra-deep power-down current and 25 µA standby current are guaranteed at this minimum voltage, making it suitable for energy-harvesting and coin-cell-powered applications where other serial Flash devices require ≥2.3 V.
AT45DB041E-DWF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR (SLC)
- Memory Size:
- 4Mbit
- Memory Organization:
- 512K x 8
- Memory Interface:
- SPI
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- 6 ns
- Voltage - Supply:
- 2.3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Wafer
AT45DB041E-DWF FAQ
1.How can I place an order for AT45DB041E-DWF through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB041E-DWF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB041E-DWF reliable?
The price and inventory of AT45DB041E-DWF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB041E-DWF is usually 5 days.
3.What payment methods are accepted for AT45DB041E-DWF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB041E-DWF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB041E-DWF?
AT45DB041E-DWF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB041E-DWF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB041E-DWF?
For technical support, including AT45DB041E-DWF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB041E-DWF requirements.
6.How does Aetrix verify that AT45DB041E-DWF is sourced from the original manufacturer or authorized distributors?
All AT45DB041E-DWF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB041E-DWF meets industry standards.
7.What is the process for return or replacement of AT45DB041E-DWF?
All AT45DB041E-DWF units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB041E-DWF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB041E-DWF part is unused and in its original packaging.
Return procedure for AT45DB041E-DWF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT45DB041E-DWF Tags
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