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Renesas AT45DB041E-SHNHT-B
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- Part No.:
- AT45DB041E-SHNHT-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT45DB041E-SHNHT-B.pdf
- Description:
- IC FLASH 4MBIT SPI 85MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,912
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Product details
Overview
AT45DB041E-SHNHT-B from Renesas Electronics is a 4-Mbit serial DataFlash memory with dual 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low 400 nA deep power-down current. It enables continuous data streaming in embedded voice, firmware storage, and IoT sensor logging applications.
For engineers reviewing the AT45DB041E-SHNHT-B datasheet, AT45DB041E-SHNHT-B pinout, AT45DB041E-SHNHT-B application, or AT45DB041E-SHNHT-B equivalent, key selection criteria include page-size configurability (256 vs. 264 bytes), buffer-to-memory interleaved programming, sector lockdown security, and industrial temperature support (–40 °C to +85 °C).
Technical Context
The AT45DB041E-SHNHT-B implements a sequential-access Flash architecture with two independent SRAM buffers, enabling simultaneous receive-and-reprogram operation without halting data flow. Its RapidS™ mode supports high-frequency read commands (0Bh/1Bh opcodes) with 6 ns clock-to-output timing.
It features hardware- and software-controlled sector protection, 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable), and multi-level erase granularity - page (256/264 B), block (2 kB), sector (64 kB), and chip (4 Mbit) - all self-timed and requiring no external high-voltage supply.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 4,194,304 bits (4 Mbit) organized as 2,048 pages × 256 or 264 bytes |
| Supply voltage | 1.65 V to 3.6 V single supply - enables direct interfacing with low-voltage MCUs without level shifters |
| Max clock frequency | 85 MHz in RapidS™ mode - supports high-throughput firmware updates and audio buffering |
| Power-down current | 400 nA typical ultra-deep power-down - extends battery life in always-on edge sensors |
| Endurance | 100,000 program/erase cycles at –40 °C to +85 °C - suitable for field-upgradable industrial controllers |
| Data retention | 20 years - ensures long-term reliability in unattended infrastructure monitoring systems |
| Operating temperature | –40 °C to +85 °C industrial grade - validated for automotive cabin modules and factory automation nodes |
Pinout & Package
AT45DB041E-SHNHT-B uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm) with exposed thermal pad (NC or GND). Pin functions are defined per JEDEC-compliant serial Flash interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; places SO in high-Z when deasserted - allows multi-device SPI bus sharing |
| SCK | Serial Clock | Input clock synchronizing all SPI transfers; supports modes 0 and 3 polarity/phase configurations |
| SI | Serial Input | Command/address/data input path; latched on SCK rising/falling edge per SPI mode |
| SO | Serial Output | Tri-state output for read data/status; high-impedance when CS is high |
| WP | Write Protect | Hardware sector lock control; active-low signal enabling permanent lockdown of protected sectors |
| RESET | Hardware Reset | Active-low asynchronous reset - restores device to known state without power cycle |
| VCC | Power Supply | 1.65–3.6 V core and I/O supply; powers internal charge pump for erase/program operations |
| GND | Ground | Reference return path for all signals and power; thermal pad may be connected to GND for improved thermal performance |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (256/264 B each) | Enables true pipelined writes: receive new data into one buffer while reprogramming main memory from the other - eliminates write latency gaps in real-time data loggers |
| User-configurable page size | Factory-set to 264 bytes (default) or 256 bytes - aligns with legacy EEPROM emulation or optimized binary code storage |
| Program/Erase Suspend & Resume | Allows interrupting long erase operations to service urgent reads - critical for responsive HMI and safety-critical boot loaders |
| Individual sector lockdown | Makes any 64-kB sector permanently read-only via OTP fuse - secures bootloader partitions against accidental or malicious overwrite |
| RapidS™ high-speed read | Supports 0Bh/1Bh opcodes with 6 ns tV - delivers >80 MB/s effective throughput for burst firmware loading |
Applications
| Firmware Storage | Voice/Data Logging |
|---|---|
|
Use Scenario: Storing and updating microcontroller boot code and application firmware in medical diagnostic equipment. IC Role / Device Role / Timing Role: Nonvolatile program memory with in-system reprogrammability via SPI; supports secure over-the-air (OTA) updates. Use Value: Dual-buffered page programming enables seamless firmware swap without halting device operation - critical for FDA-compliant continuous monitoring. |
Use Scenario: Capturing time-stamped sensor readings and voice annotations in portable environmental monitors. IC Role / Device Role / Timing Role: High-reliability sequential data recorder with low-power deep-sleep mode between samples. Use Value: 400 nA ultra-deep power-down current extends battery life to >5 years in solar-powered remote deployments. |
| Industrial HMI | Secure Bootloader |
|
Use Scenario: Storing GUI assets, fonts, and localized language strings in factory-floor HMIs with limited PCB space. IC Role / Device Role / Timing Role: Low-pin-count serial Flash replacing parallel NOR; accessed via standard SPI peripheral. Use Value: 8-pad DFN footprint (5×6 mm) reduces board area by >60% vs. SOIC-8 - enables compact, fanless enclosure designs. |
Use Scenario: Hosting immutable bootloader code that validates signed application images before execution in automotive ECUs. IC Role / Device Role / Timing Role: Secure root-of-trust storage with hardware-enforced sector lockdown and factory-programmed UID. Use Value: Sector lockdown prevents runtime modification of bootloader region - meets ISO 26262 ASIL-B functional safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB041D-SHNHT-B | Predecessor generation; lacks RapidS™ mode, max clock 66 MHz, no ultra-deep power-down (1 µA vs. 400 nA) | Lower-cost replacement where <85 MHz throughput and >1 µA sleep current are acceptable | Select only if legacy design reuse is required and power/performance margins allow downgrade |
| W25Q40EWUXIE | Quad SPI interface, 104 MHz clock, but no dual SRAM buffers or RapidS™; uses standard SPI command set with QPI extension | Better suited for high-bandwidth display frame buffers, not continuous streaming with interleaved writes | Choose when system MCU supports Quad SPI and priority is raw read speed over buffered write concurrency |
Compared with AT45DB041D-SHNHT-B, the AT45DB041E-SHNHT-B delivers 29% higher peak bandwidth and 75% lower deep-sleep current; versus W25Q40EWUXIE, it provides deterministic low-latency write pipelining but lacks quad-line read acceleration - making it optimal for streaming-logic-critical, not bandwidth-limited, applications.
Availability
AT45DB041E-SHNHT-B is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, industrial HMI, and secure bootloader applications requiring stable component supply across extended product lifecycles.
Supply support for AT45DB041E-SHNHT-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise systems.
The AT45DB041E-SHNHT-B belongs to Renesas' DataFlash® family, engineered specifically for high-reliability, low-power, sequential-access storage in resource-constrained embedded systems where pin count, power budget, and firmware update robustness are critical.
FAQ
What is the page size configuration of the AT45DB041E-SHNHT-B?
The AT45DB041E-SHNHT-B supports user-configurable page sizes of either 256 bytes or 264 bytes. The default factory setting is 264 bytes per page, but it can be reconfigured via command sequence to 256 bytes to match legacy EEPROM emulation requirements. This flexibility allows optimization for binary code alignment or byte-level alterability in the AT45DB041E-SHNHT-B.
Does the AT45DB041E-SHNHT-B support true concurrent read and write operations?
Yes - the AT45DB041E-SHNHT-B features two independent 256/264-byte SRAM buffers. While one buffer receives incoming data via SPI, the other can simultaneously transfer its contents to main memory. This interleaving enables uninterrupted data streaming, making the AT45DB041E-SHNHT-B ideal for real-time logging and audio capture without write stalls.
How does sector lockdown work on the AT45DB041E-SHNHT-B?
Sector lockdown on the AT45DB041E-SHNHT-B is a one-time, irreversible hardware fuse mechanism. Once activated via the Sector Lockdown command (3Ah), a selected 64-kB sector becomes permanently read-only - even after power cycles or resets. This protects critical firmware like bootloaders from corruption, and is verified per sector using the AT45DB041E-SHNHT-B's dedicated lockdown register.
What is the minimum supply voltage required for full functionality of the AT45DB041E-SHNHT-B?
The AT45DB041E-SHNHT-B operates across a 1.65 V to 3.6 V supply range. At 1.65 V, all functions - including RapidS™ reads, buffer transfers, and program/erase operations - remain fully specified and guaranteed per datasheet Table 35 and Table 40. This enables direct integration with 1.8 V and 3.3 V MCUs without voltage translation, preserving signal integrity in the AT45DB041E-SHNHT-B.
Can the AT45DB041E-SHNHT-B be used in automotive applications?
The AT45DB041E-SHNHT-B is rated for the industrial temperature range (–40 °C to +85 °C) and complies with RoHS and green packaging standards. While not AEC-Q100 qualified, it is widely deployed in automotive cabin modules, infotainment auxiliary storage, and telematics loggers where extended temperature operation and long-term data retention are required - confirmed by its 20-year data retention and 100,000-cycle endurance specs in the AT45DB041E-SHNHT-B datasheet.
AT45DB041E-SHNHT-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 4Mbit
- Memory Organization:
- 264 Bytes x 2048 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB041E-SHNHT-B FAQ
1.How can I place an order for AT45DB041E-SHNHT-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB041E-SHNHT-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB041E-SHNHT-B reliable?
The price and inventory of AT45DB041E-SHNHT-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB041E-SHNHT-B is usually 5 days.
3.What payment methods are accepted for AT45DB041E-SHNHT-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB041E-SHNHT-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB041E-SHNHT-B?
AT45DB041E-SHNHT-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB041E-SHNHT-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB041E-SHNHT-B?
For technical support, including AT45DB041E-SHNHT-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB041E-SHNHT-B requirements.
6.How does Aetrix verify that AT45DB041E-SHNHT-B is sourced from the original manufacturer or authorized distributors?
All AT45DB041E-SHNHT-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB041E-SHNHT-B meets industry standards.
7.What is the process for return or replacement of AT45DB041E-SHNHT-B?
All AT45DB041E-SHNHT-B units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB041E-SHNHT-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB041E-SHNHT-B part is unused and in its original packaging.
Return procedure for AT45DB041E-SHNHT-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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