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Renesas AT45DB041E-SHNHT-T
- Part No.:
- AT45DB041E-SHNHT-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
AT45DB041E-SHNHT-T.pdf
- Description:
- IC FLASH 4MBIT SPI 85MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,509
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Product details
Overview
AT45DB041E-SHNHT-T from Renesas Electronics is a 4-Mbit serial DataFlash memory with dual 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low 400 nA deep power-down current. It enables continuous data streaming in embedded voice, firmware storage, and IoT sensor logging applications.
For engineers reviewing the AT45DB041E-SHNHT-T datasheet, AT45DB041E-SHNHT-T pinout, AT45DB041E-SHNHT-T application, or AT45DB041E-SHNHT-T equivalent, key selection criteria include page-size configurability (256 vs. 264 bytes), buffer-to-memory program with built-in erase, sector lockdown security, and industrial temperature support (–40 °C to +85 °C).
Technical Context
The AT45DB041E-SHNHT-T implements a sequential-access Flash architecture with two independent SRAM buffers that support concurrent read-while-write operations-enabling seamless buffering of incoming data during main memory reprogramming. Its RapidS™ mode delivers 85 MHz clock rates with 6 ns clock-to-output timing.
It supports flexible erase granularity (page/2 kB block/64 kB sector/chip), hardware/software sector protection, and a 128-byte OTP security register containing 64 bytes of factory-unique ID and 64 bytes user-programmable space. All program/erase cycles are self-timed without external high-voltage requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 4 Mbits (2,048 × 256 or 264 bytes) main array + two 256/264-byte SRAM buffers for interleaved streaming |
| Supply Voltage | 1.65 V – 3.6 V single supply - eliminates need for voltage translators in low-voltage microcontroller systems |
| Max Clock Frequency | 85 MHz (RapidS™ mode) - enables high-throughput firmware updates and real-time audio buffering |
| Power-Down Current | 400 nA typical ultra-deep power-down - extends battery life in always-on edge sensors |
| Endurance & Retention | 100,000 program/erase cycles and 20-year data retention at –40 °C to +85 °C - suitable for field-upgradable industrial controllers |
| Interface Standard | SPI-compatible, modes 0 and 3 - ensures interoperability with ARM Cortex-M, RISC-V, and legacy MCU families |
| Page Size | User-configurable 256 or 264 bytes (factory default 264) - allows alignment with legacy DataFlash or optimized byte-alterable E2PROM emulation |
Pinout & Package
AT45DB041E-SHNHT-T is packaged in an 8-pad Ultra-thin DFN (5 × 6 × 0.6 mm) with exposed thermal pad (non-connected). Pin functions are defined per JEDEC-compliant SOIC and DFN footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; places SO in high-impedance when deasserted - enables multi-device SPI bus sharing |
| SCK | Serial Clock | Input clock synchronizing all SPI transfers; supports up to 85 MHz in RapidS™ mode |
| SI | Serial Input | Data input for commands, addresses, and write data - compatible with standard SPI master output drivers |
| SO | Serial Output | Tri-state data output; driven only when CS is active - prevents bus contention in daisy-chained configurations |
| WP | Write Protect | Hardware-enabled sector protection control - locks sectors against accidental overwrite during power transients |
| RESET | Hardware Reset | Active-low asynchronous reset - restores device to known state after brown-out or initialization failure |
| VCC | Power Supply | 1.65–3.6 V core supply - supports direct connection to Li-ion battery or 3.3 V/1.8 V system rails |
| GND | Ground | Reference return path for all I/O and core logic - requires low-impedance PCB plane for noise-sensitive audio capture |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM Buffers | Two independent 256/264-byte buffers allow simultaneous reception into one buffer while programming the other to Flash - eliminates data loss during continuous sensor stream ingestion |
| RapidS™ High-Speed Mode | 85 MHz operation with 6 ns tV (clock-to-output) - reduces firmware update time by >3× versus standard SPI Flash at same voltage |
| Configurable Page Size | Factory-set 264-byte or user-selectable 256-byte pages - enables compatibility with legacy DataFlash systems or optimized byte-level E2PROM emulation |
| Program/Erase Suspend | Interruptible page/block/sector erase and program - permits urgent status reads or command execution without waiting for background Flash operations |
| OTP Security Register | 128-byte register with 64-byte factory-unique ID and 64-byte user space - supports secure boot key binding and device identity attestation |
| Sector Lockdown | Permanent read-only locking of any sector via dedicated command - prevents tampering with bootloader or calibration data in deployed field units |
Applications
| Firmware Storage | Audio Data Logging |
|---|---|
Use Scenario: Storing and updating bootloaders and application firmware in industrial PLCs with field upgrade capability. IC Role / Device Role / Timing Role: Nonvolatile code storage with in-system reprogrammability via SPI; supports rapid page writes during OTA updates. Use Value: Enables secure, low-power firmware patching without external high-voltage programming hardware or system reset interruption. |
Use Scenario: Capturing and buffering analog sensor outputs (e.g., vibration, temperature) in predictive maintenance gateways. IC Role / Device Role / Timing Role: High-throughput sequential data sink using dual-buffer interleaving to sustain continuous 15 MHz read/write streams. Use Value: Eliminates dropped samples during Flash reprogramming - critical for time-aligned waveform analysis in edge AI inference. |
| Secure Boot Configuration | IoT Edge Node Data Buffer |
Use Scenario: Storing cryptographic keys and immutable configuration parameters in medical wearable devices requiring HIPAA compliance. IC Role / Device Role / Timing Role: Secure nonvolatile storage with sector lockdown and OTP register - protects root-of-trust assets from runtime overwrite. Use Value: Prevents unauthorized modification of boot policy or encryption keys, satisfying IEC 62443-3-3 SL2 requirements. |
Use Scenario: Local buffering of environmental telemetry (CO₂, humidity, motion) in battery-powered smart building nodes before cloud upload. IC Role / Device Role / Timing Role: Low-power sequential memory with 400 nA ultra-deep power-down - extends 10-year battery life in sealed enclosures. Use Value: Reduces average system current by >95% during idle periods while retaining full data integrity across power cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB041D-SHNHT-T | Predecessor generation; lacks RapidS™ mode (max 66 MHz), no ultra-deep power-down (1 µA), and no OTP security register. | Suitable for cost-sensitive legacy designs where 85 MHz speed and advanced security are not required. | Select only if backward compatibility with older AT45DB041D-based layouts is mandatory and performance/security upgrades are deferred. |
| W25Q40EWUXIE | Quad SPI interface, 40 MHz max clock, no dual SRAM buffers, no RapidS™, no sector lockdown - but supports QPI/DTR for higher throughput in burst reads. | Better suited for high-bandwidth display frame buffer or boot image loading where parallelism outweighs sequential streaming needs. | Choose when system MCU supports Quad SPI and priority is raw read bandwidth over concurrent write buffering or permanent sector protection. |
Compared with AT45DB041D-SHNHT-T, the AT45DB041E-SHNHT-T adds 29% faster operation, 99.96% lower deep power-down current, and hardware-enforced sector lockdown - making it superior for battery-constrained, security-critical, real-time streaming applications. Versus W25Q40EWUXIE, it trades Quad SPI bandwidth for deterministic low-latency sequential writes and robust data integrity features.
Availability
AT45DB041E-SHNHT-T is available at Aetrix Electronics and suitable for firmware storage, audio data logging, secure boot configuration, and IoT edge node data buffering requiring stable component supply across industrial, medical, and automotive-qualified programs.
Supply support for AT45DB041E-SHNHT-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with deep expertise in Flash memory and microcontroller integration.
The AT45DB041E-SHNHT-T belongs to Renesas' DataFlash® family - engineered specifically for high-reliability, low-pin-count, sequential-access storage in resource-constrained embedded systems demanding long-term data integrity and secure field updates.
FAQ
What is the maximum operating frequency of the AT45DB041E-SHNHT-T in RapidS™ mode?
The AT45DB041E-SHNHT-T achieves up to 85 MHz in RapidS™ mode, with a guaranteed clock-to-output time (tV) of 6 ns maximum. This enables significantly faster firmware reads and buffer transfers compared to standard SPI Flash devices. The AT45DB041E-SHNHT-T maintains full functionality across its 1.65 V–3.6 V supply range at this speed, eliminating the need for voltage scaling during high-performance operation.
Does the AT45DB041E-SHNHT-T support true byte-level writes like EEPROM?
The AT45DB041E-SHNHT-T does not support direct byte-level writes to Flash, but enables E2PROM emulation via a self-contained three-step read-modify-write operation using its dual SRAM buffers. This allows bit- or byte-alterable storage without external controllers. The AT45DB041E-SHNHT-T's buffer architecture makes this process deterministic and interruptible - unlike conventional Flash requiring full-page erases before modification.
How is sector protection implemented on the AT45DB041E-SHNHT-T?
The AT45DB041E-SHNHT-T provides both software-configurable sector protection and hardware-controlled lockdown. Individual sectors can be locked via the Sector Protection Register, and once activated, sector lockdown makes protection permanent and irreversible. The WP pin offers additional hardware-level write inhibition. These features are fully supported in the AT45DB041E-SHNHT-T and verified across its industrial temperature range.
What package type does the AT45DB041E-SHNHT-T use, and is thermal pad connection required?
The AT45DB041E-SHNHT-T uses an 8-pad Ultra-thin DFN package measuring 5 mm × 6 mm × 0.6 mm. Its bottom thermal pad is not internally connected to any voltage potential and may be left floating or tied to GND for mechanical stability - no electrical connection is required or recommended. This design simplifies PCB layout and avoids ground loop risks in sensitive analog sections.
Can the AT45DB041E-SHNHT-T operate reliably at 1.65 V supply voltage?
Yes, the AT45DB041E-SHNHT-T is fully specified to operate down to 1.65 V across all functions - including 85 MHz RapidS™ reads, buffer-to-memory programming, and ultra-deep power-down (400 nA). This enables direct interfacing with 1.8 V or single-cell Li-ion systems without level-shifting. All AC and DC parameters in the official datasheet DS-AT45DB041E-8783 Rev. Q are validated at 1.65 V minimum.
AT45DB041E-SHNHT-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 4Mbit
- Memory Organization:
- 264 Bytes x 2048 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB041E-SHNHT-T FAQ
1.How can I place an order for AT45DB041E-SHNHT-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB041E-SHNHT-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB041E-SHNHT-T reliable?
The price and inventory of AT45DB041E-SHNHT-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB041E-SHNHT-T is usually 5 days.
3.What payment methods are accepted for AT45DB041E-SHNHT-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB041E-SHNHT-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB041E-SHNHT-T?
AT45DB041E-SHNHT-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB041E-SHNHT-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB041E-SHNHT-T?
For technical support, including AT45DB041E-SHNHT-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB041E-SHNHT-T requirements.
6.How does Aetrix verify that AT45DB041E-SHNHT-T is sourced from the original manufacturer or authorized distributors?
All AT45DB041E-SHNHT-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB041E-SHNHT-T meets industry standards.
7.What is the process for return or replacement of AT45DB041E-SHNHT-T?
All AT45DB041E-SHNHT-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB041E-SHNHT-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB041E-SHNHT-T part is unused and in its original packaging.
Return procedure for AT45DB041E-SHNHT-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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