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Renesas AT45DB041E-SSHN-B
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- Part No.:
- AT45DB041E-SSHN-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT45DB041E-SSHN-B.pdf
- Description:
- IC FLASH 4MBIT SPI 85MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,271
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Product details
Overview
AT45DB041E-SSHN-B from Renesas Electronics is a 4-Mbit serial DataFlash memory with dual 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low-power Deep Power-Down (400 nA typical). It supports byte/page programming, flexible erase options (page/block/sector/chip), and hardware/software sector protection - used in embedded firmware storage, voice recording systems, and industrial data loggers requiring nonvolatile sequential access.
For engineers reviewing the AT45DB041E-SSHN-B datasheet, AT45DB041E-SSHN-B pinout, AT45DB041E-SSHN-B application, or AT45DB041E-SSHN-B equivalent, key selection criteria include SPI timing compliance (tV ≤ 6 ns), page size configurability (256 vs. 264 bytes), buffer-to-memory interleaving capability, sector lockdown security, and industrial temperature support (–40 °C to +85 °C).
Technical Context
The AT45DB041E-SSHN-B implements a serial sequential-access architecture with two independent SRAM buffers enabling concurrent read/write operations: one buffer accepts new data while the other transfers content to main memory. Its RapidS™ mode uses optimized command sequences and reduced setup/hold times to achieve 85 MHz clock rates without requiring external voltage boosting.
Memory organization comprises 2,048 pages of 256 or 264 bytes (factory-configurable), plus 128 kbits of extra capacity. Sector protection is implemented via dedicated registers supporting individual sector lockdown and OTP security register programming - all managed through standard SPI commands including status polling and suspend/resume during program/erase cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 4 Mbits (512 kB) main array + 128 kbits extra space; enables compact firmware/image storage without parallel bus overhead |
| Interface & speed | SPI-compatible (modes 0/3); up to 85 MHz RapidS™ operation; tV ≤ 6 ns ensures tight timing margin for high-frequency host controllers |
| Page size | User-configurable 256 or 264 bytes; default 264-byte layout accommodates ECC/data overhead; factory-set option avoids runtime configuration |
| Power consumption | 400 nA ultra-deep power-down (typical); 25 µA standby; 7 mA active read @15 MHz - suitable for battery-backed data logging |
| Endurance & retention | 100,000 program/erase cycles at –40 °C to +85 °C; 20-year data retention - meets industrial lifecycle requirements |
| Operating temperature | –40 °C to +85 °C industrial grade; validated DC/AC specs across full range per Table 35–39 |
| Security features | 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable); sector lockdown makes protected regions permanently read-only |
Pinout & Package
AT45DB041E-SSHN-B is packaged in an 8-lead SOIC (208-mil wide), RoHS-compliant, green plastic body. Pin functions are electrically defined and mechanically fixed per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; deassertion places device in standby (SO tri-stated); required for command initiation and timing synchronization |
| SCK | Serial Clock | Input clock driving SPI interface; supports up to 85 MHz in RapidS™ mode; defines bit transfer timing for all commands |
| SI | Serial Input | Data input line for commands, addresses, and write data; sampled on SCK rising edge in SPI mode 0 |
| SO | Serial Output | Data output line for read data and status; driven only when CS is low; high-impedance when CS is high |
| WP | Write Protect | Hardware sector protection control; low = enables sector lock/unlock; high = prevents modification of protected sectors |
| RESET | Hardware Reset | Active-low asynchronous reset; forces device into known state without power cycle; required for recovery after brown-out |
| VCC | Power Supply | Single 1.65 V–3.6 V supply; powers all internal logic, memory, and I/O; no auxiliary voltage required |
| GND | Ground | Reference return path for VCC and all signals; must be low-impedance to maintain noise immunity and timing integrity |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (256/264 bytes each) | Enables true pipelined writes: receive new data into one buffer while programming the other to flash - eliminates write latency bottlenecks in streaming applications |
| RapidS™ high-speed interface | Delivers 85 MHz operation with guaranteed 6 ns clock-to-output time - reduces firmware update time by >3× vs. legacy SPI Flash at same voltage |
| Flexible erase granularity | Page (256/264 B), block (2 kB), sector (64 kB), and chip (4 Mbit) erase options - allows precise wear leveling and partial field updates without full reflash |
| Program/erase suspend/resume | Pauses ongoing erase or program to service urgent read requests - critical for real-time systems requiring deterministic response latency |
| Hardware + software sector protection | Combines WP pin control with programmable sector protection register and permanent lockdown - prevents accidental or malicious firmware corruption |
| Ultra-low-power Deep Power-Down | 400 nA typical current draw in ultra-deep mode - extends battery life in always-on sensor nodes and portable medical devices |
Applications
| Firmware Storage in Industrial PLCs | Voice Recording in Security Systems |
|---|---|
Use Scenario: Storing and updating ladder logic firmware in programmable logic controllers operating in harsh factory environments. IC Role / Device Role / Timing Role: Nonvolatile sequential code storage with in-system reprogrammability via SPI; supports rapid field updates without hardware intervention. Use Value: Dual-buffer interleaving enables zero-downtime firmware patching; sector lockdown prevents unauthorized modification of safety-critical control routines. |
Use Scenario: Capturing and storing audio alerts and event-triggered voice clips in networked surveillance panels. IC Role / Device Role / Timing Role: High-reliability sequential audio buffer with low-latency read capability and configurable page size for variable-bitrate encoding. Use Value: 85 MHz RapidS™ read speed ensures glitch-free playback; ultra-deep power-down (400 nA) minimizes standby drain in battery-powered edge recorders. |
| Data Logging in Environmental Sensors | Boot Code Storage in RISC-V Microcontrollers |
Use Scenario: Long-term collection of temperature, humidity, and air quality metrics in unattended outdoor monitoring stations. IC Role / Device Role / Timing Role: Low-voltage (1.65 V min), low-power nonvolatile memory for timestamped sample storage with wear-leveling support. Use Value: 100,000 program/erase cycles and 20-year retention ensure decade-long deployment; 256-byte page config simplifies alignment with sensor packet sizes. |
Use Scenario: Storing immutable boot ROM and secure bootloader images for RISC-V SoCs in automotive gateway modules. IC Role / Device Role / Timing Role: SPI-connected primary boot memory with hardware write protection and OTP UID for secure device identity binding. Use Value: Sector lockdown + 64-byte factory UID enable cryptographic chain-of-trust; single-supply operation simplifies power design in ASIL-B domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q40EW | 4 Mbit Quad SPI (QSPI), no dual buffers; max 104 MHz QSPI read; lacks RapidS™, sector lockdown, or OTP register | Better suited for high-throughput code XIP; not ideal for streaming write-intensive logging or secure firmware partitioning | Select if QSPI host interface and higher read bandwidth are prioritized over write concurrency and security features |
| Macronix MX25L4006E | 4 Mbit standard SPI; 75 MHz max; no SRAM buffers; no RapidS™; basic sector protection only; no OTP or lockdown | Lower-cost alternative for simple code storage where interleaved writes and advanced security are unnecessary | Choose when cost sensitivity outweighs need for buffer-assisted streaming or permanent sector immutability |
Compared with W25Q40EW and MX25L4006E, the AT45DB041E-SSHN-B uniquely delivers simultaneous buffer-based write pipelining, hardware-enforced sector lockdown, and 400 nA ultra-deep power-down - making it optimal for secure, low-power, streaming-capable embedded storage where write latency and tamper resistance are critical.
Availability
AT45DB041E-SSHN-B is available at Aetrix Electronics and suitable for industrial firmware storage, voice recording systems, and environmental data logging requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT45DB041E-SSHN-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The AT45DB041E belongs to Renesas' DataFlash® family - designed specifically for high-reliability, low-pin-count, sequential-access nonvolatile storage in resource-constrained embedded systems.
FAQ
What is the maximum SPI clock frequency supported by the AT45DB041E-SSHN-B?
The AT45DB041E-SSHN-B supports up to 85 MHz in RapidS™ mode (opcodes 0Bh/1Bh), with guaranteed 6 ns clock-to-output time. In standard SPI mode, it operates reliably up to 66 MHz. The device complies with SPI modes 0 and 3, and all AC timing parameters are specified across the full industrial temperature range (–40 °C to +85 °C) per Table 38.
Does the AT45DB041E-SSHN-B support true concurrent read and write operations?
Yes - the AT45DB041E-SSHN-B features two independent 256/264-byte SRAM buffers. While one buffer is being written via SI, the other can simultaneously transfer data to main memory or be read out via SO. This pipelining eliminates write stalls and enables continuous data streaming, unlike conventional SPI Flash devices without buffers.
How is page size configured on the AT45DB041E-SSHN-B?
Page size (256 vs. 264 bytes) on the AT45DB041E-SSHN-B is factory-configured and cannot be changed in the field. The -SSHN-B variant ships with 264-byte pages as default. Configuration is performed during wafer sort using dedicated commands (Table 22); users must verify page size via status register or read commands before initiating page-aligned operations.
What security mechanisms does the AT45DB041E-SSHN-B provide beyond basic write protection?
The AT45DB041E-SSHN-B provides three-tiered security: (1) hardware WP pin control, (2) software-configurable sector protection register, and (3) irreversible sector lockdown. It also includes a 128-byte OTP security register - 64 bytes factory-programmed with unique ID, 64 bytes user-programmable - enabling device authentication and secure key storage.
Can the AT45DB041E-SSHN-B operate down to 1.65 V across its full temperature range?
Yes - the AT45DB041E-SSHN-B is fully specified for 1.65 V to 3.6 V operation across –40 °C to +85 °C. All DC and AC characteristics, including program/erase timing and read stability, are guaranteed at 1.65 V minimum per Tables 36 and 38. This enables direct integration with low-voltage MCUs and energy-harvesting systems.
AT45DB041E-SSHN-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Active
- Programmable:
- Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 4Mbit
- Memory Organization:
- 264 Bytes x 2048 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB041E-SSHN-B FAQ
1.How can I place an order for AT45DB041E-SSHN-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB041E-SSHN-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB041E-SSHN-B reliable?
The price and inventory of AT45DB041E-SSHN-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB041E-SSHN-B is usually 5 days.
3.What payment methods are accepted for AT45DB041E-SSHN-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB041E-SSHN-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB041E-SSHN-B?
AT45DB041E-SSHN-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB041E-SSHN-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB041E-SSHN-B?
For technical support, including AT45DB041E-SSHN-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB041E-SSHN-B requirements.
6.How does Aetrix verify that AT45DB041E-SSHN-B is sourced from the original manufacturer or authorized distributors?
All AT45DB041E-SSHN-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB041E-SSHN-B meets industry standards.
7.What is the process for return or replacement of AT45DB041E-SSHN-B?
All AT45DB041E-SSHN-B units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB041E-SSHN-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB041E-SSHN-B part is unused and in its original packaging.
Return procedure for AT45DB041E-SSHN-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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