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Renesas AT45DB041E-SSHNHT-T
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- Part No.:
- AT45DB041E-SSHNHT-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT45DB041E-SSHNHT-T.pdf
- Description:
- IC FLASH 4MBIT SPI 85MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:7,909
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Product details
Overview
AT45DB041E-SSHNHT-T from Renesas Electronics is a 4-Mbit serial DataFlash memory with dual 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low 400 nA deep power-down current. It supports byte/page programming, sector lockdown, and OTP security register - deployed in embedded firmware storage and voice/data logging systems.
For engineers reviewing the AT45DB041E-SSHNHT-T datasheet, AT45DB041E-SSHNHT-T pinout, AT45DB041E-SSHNHT-T application, or AT45DB041E-SSHNHT-T equivalent, key selection criteria include page-size configurability (256 vs. 264 bytes), buffer-to-memory interleaved write capability, industrial temperature support (–40 °C to +125 °C), and hardware/software sector protection for secure firmware updates.
Technical Context
The AT45DB041E-SSHNHT-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling concurrent data reception and main memory reprogramming. Its RapidS™ mode delivers 85 MHz clock rates with 6 ns clock-to-output timing, while low-power read mode operates at ≤15 MHz with reduced active current.
Memory organization comprises 2,048 pages of 256 or 264 bytes (factory-configurable), plus 128 kbits extra capacity. Erase granularity spans page (256/264 B), block (2 kB), sector (64 kB), and full chip (4 Mbits), with suspend/resume functionality for real-time interrupt handling during program/erase cycles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4 Mbits (2,048 × 256/264-byte pages) + 128 kbits extra space - enables compact firmware image storage with overhead for wear leveling or metadata. |
| Supply Voltage | 1.65 V – 3.6 V single supply - supports direct interfacing with 1.8 V and 3.3 V microcontrollers without level shifting. |
| Max Clock Frequency | 85 MHz (RapidS™ mode) - achieves sustained high-throughput streaming writes when paired with dual-buffer interleaving. |
| Power-Down Current | 400 nA (ultra-deep), 3 µA (deep), 25 µA (standby) - extends battery life in always-on sensor nodes and portable devices. |
| Endurance & Retention | 100,000 cycles (–40 °C to +85 °C), 10,000 cycles (–40 °C to +125 °C); 20-year data retention - suitable for industrial control firmware with infrequent field updates. |
| Interface Protocol | SPI-compatible, modes 0 and 3 - ensures interoperability with standard MCU SPI peripherals and avoids custom driver development. |
| Security Features | 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable), sector lockdown, individual sector protection - meets basic secure boot and anti-cloning requirements. |
Pinout & Package
AT45DB041E-SSHNHT-T uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm) with exposed thermal pad (non-connected or GND-capable). Pin functions are defined per JEDEC-compliant SOIC and DFN footprints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; places device in standby (high-Z SO) when deasserted - critical for multi-device SPI bus arbitration. |
| SCK | Serial Clock | Input clock synchronizing all SPI transfers; supports up to 85 MHz in RapidS™ mode - determines maximum throughput in continuous read/write. |
| SI | Serial Input | Data-in line for commands, addresses, and write data - used in all program/erase/read command sequences. |
| SO | Serial Output | Data-out line for read operations and status registers; tri-stated when CS is high - requires external pull-up if shared on SPI bus. |
| WP | Write Protect | Hardware sector protection enable; low = protection active - provides fail-safe lock against accidental firmware overwrite. |
| RESET | Reset Input | Active-low hardware reset; initiates internal state machine recovery - essential for robust recovery after brown-out or watchdog timeout. |
| VCC | Power Supply | 1.65–3.6 V core supply; powers logic, Flash array, and buffers - must be decoupled per datasheet layout guidelines. |
| GND | Ground | Reference for all I/O and internal circuitry; DFN thermal pad may be connected to PCB ground plane for thermal relief. |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (256/264 bytes each) | Enables simultaneous data reception into one buffer while reprogramming main memory from the other - eliminates write latency gaps in continuous data streams. |
| User-configurable page size | Factory-set to 264 bytes (default) or 256 bytes - allows optimization between storage efficiency (264) and legacy compatibility (256). |
| Program/Erase Suspend & Resume | Pauses active erase or program operations to service high-priority interrupts - guarantees deterministic real-time response in safety-critical systems. |
| Individual sector lockdown | Makes any memory sector permanently read-only after programming - prevents tampering with bootloader or calibration data post-deployment. |
| RapidS™ high-frequency read mode | Supports 85 MHz clock with 6 ns tV - delivers >10 MB/s effective read bandwidth for fast firmware loading or image decompression. |
| Ultra-deep power-down (400 nA) | Reduces quiescent current by >99% vs. standby mode - extends shelf life and battery runtime in maintenance-free IoT edge nodes. |
Applications
| Firmware Storage | Voice/Data Logging |
|---|---|
Use Scenario: Storing and updating boot code, application firmware, and configuration parameters in industrial PLCs and motor drives. IC Role / Device Role / Timing Role: Non-volatile program memory with in-system reprogrammability via SPI; supports secure over-the-air (OTA) updates using sector protection. Use Value: Eliminates need for external EEPROM or parallel NOR Flash; reduces BOM count and PCB area while enabling field-upgradable firmware. |
Use Scenario: Capturing audio snippets, sensor telemetry, or diagnostic logs in battery-powered environmental monitors. IC Role / Device Role / Timing Role: High-reliability sequential data sink with low-power deep-sleep modes and buffer-assisted streaming writes. Use Value: Dual-buffer interleaving sustains >1 MB/s sustained write rate; ultra-deep power-down extends multi-year battery life. |
| Secure Bootloader Storage | Embedded GUI Asset Storage |
Use Scenario: Hosting immutable bootloader code and cryptographic keys in medical devices requiring FDA-compliant firmware integrity. IC Role / Device Role / Timing Role: Trusted root-of-trust storage with OTP UID and sector lockdown - verified at every power-on reset. Use Value: Prevents unauthorized firmware replacement; factory-programmed UID enables device-specific key binding and traceability. |
Use Scenario: Storing compressed bitmap assets, fonts, and UI strings for smart home displays and HMI panels. IC Role / Device Role / Timing Role: High-bandwidth read memory supporting rapid GUI rendering via RapidS™ 85 MHz interface. Use Value: Reduces display initialization time by >40% vs. standard SPI Flash; 6 ns tV minimizes pixel-fetch latency during animation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W25Q40EWBYIG | 4 Mbit Quad SPI (QSPI), no SRAM buffers, no RapidS™, 133 MHz QSPI clock, 8-pin SOIC only | Lacks dual-buffer interleaving and sector lockdown; supports faster random reads but slower sequential writes | Choose for QSPI host interfaces and higher random-access performance; avoid where buffer-assisted streaming or secure lockdown is required. |
| MX25L4006EM2I-12G | 4 Mbit standard SPI, no RapidS™, no OTP register, 100,000-cycle endurance at –40 °C to +85 °C only | No ultra-deep power-down (min 1 µA), no sector lockdown, no factory UID - lower security and power efficiency | Acceptable for cost-sensitive consumer applications without security or extended temperature needs; not suitable for industrial +125 °C use. |
Compared with W25Q40EWBYIG and MX25L4006EM2I-12G, the AT45DB041E-SSHNHT-T uniquely combines dual-SRAM buffering for gapless streaming, hardware-enforced sector lockdown for firmware integrity, and 400 nA ultra-deep power-down - making it optimal for secure, low-power, high-throughput embedded storage where reliability across –40 °C to +125 °C is mandatory.
Availability
AT45DB041E-SSHNHT-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, and secure bootloader applications requiring stable component supply, long-term industrial temperature support, and RoHS-compliant packaging.
Supply support for AT45DB041E-SSHNHT-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT45DB041E-SSHNHT-T belongs to Renesas' DataFlash® family - engineered specifically for high-reliability, low-pin-count, low-voltage serial storage in resource-constrained embedded systems demanding secure, efficient, and field-upgradable non-volatile memory.
FAQ
What is the default page size configuration for the AT45DB041E-SSHNHT-T?
The AT45DB041E-SSHNHT-T is factory configured with a 264-byte page size by default, supporting standard DataFlash® addressing. It can be reconfigured to 256-byte pages via buffer configuration commands, enabling compatibility with legacy systems requiring binary-aligned page boundaries. This setting persists across power cycles and does not require reprogramming after each reset.
Does the AT45DB041E-SSHNHT-T support hardware write protection?
Yes, the AT45DB041E-SSHNHT-T includes a dedicated WP (Write Protect) pin that, when driven low, enables hardware-controlled sector protection. This physically disables program and erase operations on protected sectors regardless of software commands - providing fail-safe defense against accidental or malicious firmware corruption during system operation or update procedures.
How does the dual-buffer architecture improve write performance in the AT45DB041E-SSHNHT-T?
The AT45DB041E-SSHNHT-T's two independent 256/264-byte SRAM buffers allow one buffer to accept incoming data via SPI while the other simultaneously transfers its contents to main Flash memory. This interleaving eliminates idle time between page writes, enabling continuous data streaming at sustained rates - critical for real-time audio capture, sensor logging, and firmware OTA updates without data loss or CPU polling overhead.
What is the purpose of the 128-byte OTP Security Register in the AT45DB041E-SSHNHT-T?
The 128-byte OTP Security Register in the AT45DB041E-SSHNHT-T contains 64 bytes of factory-programmed unique identifier (UID) and 64 bytes of user-programmable space. The UID enables device authentication and cryptographic key binding; the user portion supports secure boot certificate storage or calibration data locking. Once programmed, OTP bits cannot be altered - ensuring immutable identity and trusted firmware origin verification.
Can the AT45DB041E-SSHNHT-T operate across the full industrial temperature range?
Yes, the AT45DB041E-SSHNHT-T is fully specified for operation from –40 °C to +125 °C, with guaranteed endurance of 10,000 program/erase cycles and 20-year data retention at the extended temperature range. Its 1.65 V minimum supply voltage and robust SPI timing margins ensure reliable performance in automotive under-hood modules, industrial motor controllers, and outdoor infrastructure equipment.
AT45DB041E-SSHNHT-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 4Mbit
- Memory Organization:
- 264 Bytes x 2048 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 3ms
- Access Time:
- -
- Voltage - Supply:
- 1.65V ~ 3.6V
- Operating Temperature:
- -40°C ~ 125°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB041E-SSHNHT-T FAQ
1.How can I place an order for AT45DB041E-SSHNHT-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB041E-SSHNHT-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB041E-SSHNHT-T reliable?
The price and inventory of AT45DB041E-SSHNHT-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB041E-SSHNHT-T is usually 5 days.
3.What payment methods are accepted for AT45DB041E-SSHNHT-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB041E-SSHNHT-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB041E-SSHNHT-T?
AT45DB041E-SSHNHT-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB041E-SSHNHT-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB041E-SSHNHT-T?
For technical support, including AT45DB041E-SSHNHT-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB041E-SSHNHT-T requirements.
6.How does Aetrix verify that AT45DB041E-SSHNHT-T is sourced from the original manufacturer or authorized distributors?
All AT45DB041E-SSHNHT-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB041E-SSHNHT-T meets industry standards.
7.What is the process for return or replacement of AT45DB041E-SSHNHT-T?
All AT45DB041E-SSHNHT-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB041E-SSHNHT-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB041E-SSHNHT-T part is unused and in its original packaging.
Return procedure for AT45DB041E-SSHNHT-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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