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Microchip Technology AT45DB081B-CNI

Part No.:
AT45DB081B-CNI
Manufacturer:
Microchip Technology
Category:
Memory
Package:
8-VDFN
Datasheet:
AetrixAT45DB081B-CNI.pdf
Description:
IC FLASH 8MBIT SPI 20MHZ 8CASON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,375

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Product details

Overview

AT45DB081B-CNI from Microchip Technology (formerly Atmel) is an 8-Mbit serial DataFlash memory IC with SPI interface, organized as 4096 pages × 264 bytes, featuring dual 264-byte SRAM buffers for concurrent read-while-write operation, 20 MHz max clock, and hardware write protection. It enables code shadowing in embedded boot loaders and firmware storage in space-constrained industrial controllers.

For engineers reviewing the AT45DB081B-CNI datasheet, AT45DB081B-CNI pinout, AT45DB081B-CNI application, or AT45DB081B-CNI equivalent, key selection criteria include page-erase flexibility, 2.5V/2.7V single-supply operation, 5.0V-tolerant control pins, continuous array read capability, and buffer-assisted reprogramming latency reduction.

Technical Context

The AT45DB081B-CNI implements a three-level memory architecture (sector/block/page) with dedicated instruction-set control over main memory and two independent 264-byte buffers. Its SPI interface supports Mode 0 and Mode 3, enabling interoperability with diverse host microcontrollers without level-shifting.

All program and erase operations-including page erase, block erase (8-page), buffer-to-main-memory programming with or without built-in erase-are internally self-timed and require no external high-voltage supply. The RDY/BUSY pin and status register bit 7 provide deterministic busy-state monitoring during these operations.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density8,650,752 bits (4096 × 264-byte pages) - provides compact nonvolatile storage for firmware images up to ~1 MB of usable data.
Supply Voltage2.5V–3.6V or 2.7V–3.6V - single-supply operation simplifies power design and eliminates need for charge pumps or auxiliary rails.
Max Clock Frequency20 MHz - enables high-throughput sequential reads (e.g., code shadowing) and fast buffer loading in real-time systems.
Active Read Current4 mA typical - low dynamic power supports battery-backed or energy-sensitive applications like portable diagnostics.
Standby Current2 µA typical - ultra-low quiescent draw maintains long-term retention in always-on monitoring nodes.
Write ProtectionHardware WP pin protects first 256 pages - prevents accidental overwrite of bootloader or calibration data without explicit pin deassertion.
Input Tolerance5.0V-tolerant SI, SCK, CS, RESET, WP - allows direct interfacing with 5V logic hosts without external level shifters.

Pinout & Package

AT45DB081B-CNI is packaged in a 28-pin TSOP-I (Type 1) surface-mount package with 400 mil body width and standard JEDEC footprint. Pin functions are electrically defined and mechanically fixed per the top-view pinout diagram in Rev. 2225F.

Pin/TerminalCircuit RoleDesign Meaning
CSChip SelectActive-low enable for SPI command initiation; must remain low throughout full instruction sequence including opcode, address, and data transfer.
SCKSerial ClockInput-only clock controlling data sampling edge (rising for input, falling for output); supports SPI Mode 0/3 via polarity/idle-state detection on CS fall.
SISerial InputInput-only data path for opcodes, addresses, and buffer writes; MSB-first protocol with no internal latching outside active CS window.
SOSerial OutputOutput-only data path for read results and status register; tri-stated when CS is high to prevent bus contention.
WPWrite ProtectHardware lock for first 256 pages; low state blocks all program/erase commands targeting pages 0–255 regardless of software instruction.
RESETChip ResetAsynchronous active-low reset that aborts ongoing operations and returns state machine to idle; internal POR ensures safe initialization at power-up.
RDY/BUSYReady/Busy IndicatorOpen-drain output pulled high externally; driven low during any self-timed operation (program, erase, compare, transfer) to signal non-interruptible execution phase.
VCC / GNDPower SupplySingle 2.5V–3.6V or 2.7V–3.6V supply pair; decoupling required within 10 mm of pins to maintain timing integrity at 20 MHz.

Key Features

FeatureDesign Value
Dual 264-byte SRAM buffersEnable simultaneous data reception into one buffer while reprogramming main memory from the other - eliminates write latency bottlenecks in streaming firmware updates.
Continuous Array ReadSupports uninterrupted sequential read across page boundaries using opcodes 68H/E8H - ideal for executing code directly from flash via shadow RAM or XIP-capable MCUs.
Page- and block-level eraseAllows selective erasure of individual 264-byte pages or 8-page (2112-byte) blocks - reduces wear and improves endurance management in log-based data recorders.
Self-contained Read-Modify-WritePerforms EEPROM-like byte/bit alteration via internal buffer transfer + compare + rewrite - eliminates need for external RAM buffering in configuration storage applications.
5.0V-tolerant control inputsEliminates level-shifter components when interfacing with legacy 5V microcontrollers or FPGAs - reduces BOM count and PCB area in mixed-voltage designs.

Applications

Industrial PLC Firmware StorageMedical Device Calibration Data Logging

Use Scenario: Storing and updating firmware images and parameter sets in programmable logic controllers deployed in factory automation environments with wide temperature swings.

IC Role / Device Role / Timing Role: Nonvolatile firmware repository with atomic page update capability and hardware write protection for critical boot sectors.

Use Value: Enables field-upgradable firmware without requiring full chip erase; 2.7V–3.6V operation ensures reliability across 24 VDC industrial power rails with ripple.

Use Scenario: Recording time-stamped sensor calibration coefficients and device usage logs in portable diagnostic instruments operating on coin-cell batteries.

IC Role / Device Role / Timing Role: Low-power, high-endurance data logger using page-erase granularity to minimize write cycles per sector.

Use Value: 2 µA standby current extends battery life beyond 5 years; dual-buffer architecture allows background logging while host MCU processes new measurements.

Automotive Infotainment BootloaderSmart Energy Meter Firmware Vault

Use Scenario: Hosting secure bootloader code and cryptographic keys in automotive head units where tamper resistance and fast code shadowing are mandatory.

IC Role / Device Role / Timing Role: Trusted firmware vault supporting continuous array read for zero-latency instruction fetch and hardware WP for immutable root-of-trust partition.

Use Value: 20 MHz clock enables sub-100 ms boot time; 5.0V-tolerant SI/SCK/CS pins simplify integration with 5V CAN microcontrollers.

Use Scenario: Storing tariff tables, firmware patches, and metering history in ANSI C12.22-compliant smart meters exposed to extended outdoor temperature ranges.

IC Role / Device Role / Timing Role: Industrial-grade flash memory qualified for -40°C to +85°C operation with guaranteed data retention >20 years.

Use Value: Page-level erase minimizes disturbance to adjacent billing records during OTA updates; RDY/BUSY pin enables deterministic interrupt-driven status polling in RTOS environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
W25Q80DVSSIG8 Mbit SPI NOR flash; no internal buffers; requires external erase before program; no continuous array read mode.Lacks concurrent buffer operation and seamless page-boundary read - unsuitable for real-time streaming or code shadowing.Select only if cost sensitivity outweighs latency and feature requirements; verify host firmware supports discrete erase-program sequences.
MX25L8006EM1I-12G8 Mbit SPI NOR flash; 104 MHz max clock; no SRAM buffers; supports quad I/O but not continuous array read.Higher bandwidth but no built-in concurrency - requires host-managed double-buffering and lacks automatic wraparound addressing.Prefer for high-speed bulk read/write where host has sufficient RAM and processing overhead to manage buffering logic.

Compared with W25Q80DVSSIG and MX25L8006EM1I-12G, the AT45DB081B-CNI delivers unique value through integrated dual buffers and continuous array read-enabling deterministic latency in firmware execution and streaming data logging without host-side memory or timing management overhead.

Availability

AT45DB081B-CNI is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device calibration data logging, and automotive infotainment bootloader applications requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for AT45DB081B-CNI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and memory solutions, with a strong heritage in Flash and DataFlash technology acquired from Atmel.

The AT45DB081B-CNI belongs to Microchip's DataFlash family, designed specifically for embedded systems needing high-density serial flash with integrated SRAM buffers to eliminate external memory and simplify firmware update architectures.

FAQ

What voltage range does the AT45DB081B-CNI support for reliable operation?

The AT45DB081B-CNI operates reliably across two specified supply ranges: 2.5V to 3.6V or 2.7V to 3.6V. Both ranges support all read, program, and erase functions without external voltage translation. Operation below 2.5V or above 3.6V is not guaranteed and may result in data corruption or command failure. The AT45DB081B-CNI includes an internal power-on reset circuit that ensures proper initialization once VCC reaches the minimum threshold.

Does the AT45DB081B-CNI support true EEPROM emulation with byte-level writes?

Yes, the AT45DB081B-CNI supports EEPROM emulation via its self-contained Read-Modify-Write operation, which uses internal SRAM buffers to alter individual bytes or bits without requiring full-page erasure. This is implemented by transferring a page to a buffer, modifying selected bytes, and rewriting the entire page - all executed internally with no host-side data staging. The AT45DB081B-CNI performs this transparently using opcodes 53H/55H (transfer), 60H/61H (compare), and 83H/86H (program with erase).

How does the RDY/BUSY pin function during AT45DB081B-CNI operations?

The RDY/BUSY pin on the AT45DB081B-CNI is an open-drain output that drives low during any internally self-timed operation - including page erase, block erase, buffer-to-main-memory programming, main memory page-to-buffer transfer, and Auto Page Rewrite. It remains low until the operation completes and the status register bit 7 transitions to '1'. The AT45DB081B-CNI allows concurrent access to the non-busy buffer during these operations, enabling overlap of data loading and memory programming.

Can the AT45DB081B-CNI be used with a 5V microcontroller without level shifters?

Yes, the AT45DB081B-CNI features 5.0V-tolerant inputs on SI, SCK, CS, RESET, and WP pins, allowing direct connection to 5V logic families without external level-shifting circuitry. However, VCC must remain within the specified 2.5V–3.6V or 2.7V–3.6V range, and SO output voltage swing is referenced to VCC - so host MCU inputs reading SO must tolerate 3.3V logic levels. The AT45DB081B-CNI's tolerance applies only to input pins; driving SO into a 5V system requires a pull-up to VCC, not 5V.

What is the purpose of the two 264-byte SRAM buffers in the AT45DB081B-CNI?

The two 264-byte SRAM buffers in the AT45DB081B-CNI enable concurrent data handling: one buffer can receive incoming data via SI while the other is being written to main memory, or vice versa. This eliminates dead time between data reception and nonvolatile storage, making the AT45DB081B-CNI ideal for streaming applications like firmware updates or sensor logging. Each buffer supports independent read, write, and compare operations, and both remain accessible even when main memory is busy with erase or program cycles.

AT45DB081B-CNI Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
8-VDFN
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
8Mbit
Memory Organization:
264 Bytes x 4096 pages
Memory Interface:
SPI
Clock Frequency:
20 MHz
Write Cycle Time - Word, Page:
14ms
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-CASON (6x8)

AT45DB081B-CNI FAQ

1.How can I place an order for AT45DB081B-CNI through Aetrix?

Please submit a Request for Quotation (RFQ) for AT45DB081B-CNI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT45DB081B-CNI reliable?

The price and inventory of AT45DB081B-CNI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB081B-CNI is usually 5 days.

3.What payment methods are accepted for AT45DB081B-CNI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB081B-CNI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT45DB081B-CNI?

AT45DB081B-CNI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT45DB081B-CNI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT45DB081B-CNI?

For technical support, including AT45DB081B-CNI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB081B-CNI requirements.

6.How does Aetrix verify that AT45DB081B-CNI is sourced from the original manufacturer or authorized distributors?

All AT45DB081B-CNI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB081B-CNI meets industry standards.

7.What is the process for return or replacement of AT45DB081B-CNI?

All AT45DB081B-CNI units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB081B-CNI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT45DB081B-CNI part is unused and in its original packaging.

Return procedure for AT45DB081B-CNI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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