Microchip Technology AT45DB081B-RC
- Part No.:
- AT45DB081B-RC
- Manufacturer:
- Microchip Technology
- Category:
- Memory
- Package:
- 28-SOIC (0.342", 8.69mm Width)
- Datasheet:
-
AT45DB081B-RC.pdf
- Description:
- IC FLASH 8MBIT SPI 20MHZ 28SOIC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
AT45DB081B from Microchip Technology (formerly Atmel) is an 8-Mbit serial DataFlash memory IC designed for embedded code shadowing, firmware storage, and data logging in resource-constrained systems. It features 4096 pages × 264 bytes, dual 264-byte SRAM buffers, SPI interface (modes 0/3), 20 MHz max clock, and single 2.5V–3.6V or 2.7V–3.6V supply.
For engineers reviewing the AT45DB081B datasheet, AT45DB081B pinout, AT45DB081B application, or AT45DB081B equivalent, key selection considerations include continuous array read capability for boot code streaming, hardware write protection (WP), RDY/BUSY status signaling, 5.0V-tolerant control pins, and page/block erase flexibility for wear-leveling in firmware update scenarios.
Technical Context
The AT45DB081B implements a serial Flash architecture with two independent 264-byte SRAM buffers enabling concurrent data reception and nonvolatile memory reprogramming. Its SPI interface supports both Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1), with all commands initiated by CS low followed by 8-bit opcodes and address sequences.
Memory organization comprises 4096 pages of 264 bytes each (8,650,752 bits total), grouped into sectors and blocks (e.g., 512-page sectors, 8-page blocks). Page-level and block-level erase operations are supported, and internal self-timed programming eliminates external timing control - critical for deterministic firmware update latency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 8 Mbit (4096 × 264-byte pages) - provides sufficient space for bootloader + application firmware in compact MCU systems. |
| Supply Voltage | 2.5V–3.6V or 2.7V–3.6V - enables direct interfacing with 2.5V/3.3V logic without level shifters. |
| Max Clock Frequency | 20 MHz - supports high-throughput firmware reads at up to ~2.5 MB/s in continuous array mode. |
| Active Read Current | 4 mA typical - minimizes power during code execution in battery-powered devices. |
| Standby Current | 2 µA typical - enables ultra-low-power retention in sleep modes. |
| Write Protection | Hardware WP pin protects first 256 pages - prevents accidental overwrite of critical bootloader sections. |
| Input Tolerance | 5.0V-tolerant SI, SCK, CS, RESET, WP - simplifies mixed-voltage board design and improves noise immunity. |
Pinout & Package
AT45DB081B is available in three standard packages: 28-pin TSOP (Type 1), 28-pin SOIC, and 24-ball CBGA. All variants share identical pin functions and electrical behavior. The device uses a 4-wire SPI interface plus dedicated control signals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable for command decoding; must be held low throughout full instruction sequence (opcode + address + data). |
| SCK | Serial Clock | Input-only clock; data latched on rising edge (SI), output on falling edge (SO); supports SPI modes 0 and 3. |
| SI | Serial Input | Command, address, and data input path; MSB-first protocol; no tri-state - driven only by host. |
| SO | Serial Output | Data and status register output; high-impedance when CS high; outputs continuously during continuous array read. |
| WP | Write Protect | Active-low hardware lock for first 256 pages; 5.0V-tolerant; prevents inadvertent program/erase of bootloader region. |
| RESET | Chip Reset | Active-low asynchronous reset; terminates ongoing operation and returns state machine to idle; 5.0V-tolerant. |
| RDY/BUSY | Ready/Busy Indicator | Open-drain output; pulled low during self-timed operations (program/erase/transfer); used for polling instead of fixed delays. |
| VCC / GND | Power Supply | Single 2.5V–3.6V or 2.7V–3.6V supply; decoupling required per layout guidelines to maintain stability at 20 MHz. |
Key Features
| Feature | Design Value |
|---|---|
| Continuous Array Read | Enables seamless code shadowing from Flash to RAM without address reinitialization - reduces boot time and simplifies host firmware. |
| Dual SRAM Buffers | 2 × 264-byte buffers allow pipelined operation: host writes to one buffer while Flash programs from the other - eliminates I/O stalls during firmware updates. |
| Page/Block Erase Flexibility | Supports granular erasure (per page or per 8-page block) - essential for implementing wear leveling and minimizing erase cycles in data logging applications. |
| Self-Timed Programming | All program/erase operations internally timed - removes need for host to manage variable latency; status register bit 7 indicates completion. |
| EEPROM Emulation | Read-Modify-Write capability via buffer transfer + compare + program - enables byte-level updates without full-page erase overhead. |
Applications
| Firmware Storage | Code Shadowing |
|---|---|
Use Scenario: Storing MCU application firmware and bootloader images in industrial controllers where field updates must preserve integrity and minimize downtime. IC Role / Device Role / Timing Role: Nonvolatile storage medium accessed via SPI during boot and OTA update; RDY/BUSY signal synchronizes host timing. Use Value: Hardware WP pin protects bootloader pages; continuous array read enables fast sequential loading into RAM - reducing boot latency by >40% vs. random-access Flash. | Use Scenario: Executing application code directly from external memory in microcontrollers with limited internal Flash (e.g., ARM Cortex-M0+). IC Role / Device Role / Timing Role: External code memory mapped via SPI-driven shadow copy; continuous read mode streams instructions without address management overhead. Use Value: 20 MHz clock support delivers sustained read throughput >2 MB/s; dual buffers allow background firmware validation while executing current image. |
| Data Logging | Firmware Update Buffering |
Use Scenario: Recording sensor readings in environmental monitoring nodes operating on coin-cell batteries for multi-year deployments. IC Role / Device Role / Timing Role: Sequential write buffer with page-erase granularity; low 2 µA standby current extends battery life. Use Value: Block erase capability enables efficient sector rotation; 2.5V operation ensures compatibility with aging battery voltage profiles down to 2.6V. | Use Scenario: Secure over-the-air (OTA) firmware updates in connected medical devices requiring atomic update rollback and signature verification. IC Role / Device Role / Timing Role: Dual-buffer architecture isolates validated new firmware in buffer 2 while running from main memory; Auto Page Rewrite ensures safe in-place patching. Use Value: Main Memory Page to Buffer Compare verifies integrity pre-commit; hardware reset recovery ensures consistent state after power loss during update. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB081E-RC | Successor revision with enhanced ESD rating (4 kV HBM) and extended temperature range (−40°C to +85°C industrial grade). | Required for new designs targeting higher reliability in harsh environments; not drop-in compatible due to minor timing parameter adjustments. | Select AT45DB081E-RC for new industrial designs needing improved robustness; legacy AT45DB081B remains valid for cost-sensitive commercial applications. |
| W25Q80DVSSIG | 8 Mbit Quad SPI Flash with 4-line I/O, faster 104 MHz DTR read, but lacks dual SRAM buffers and continuous array read mode. | Suitable for high-speed data retrieval but requires host-side buffering logic for firmware streaming; no hardware WP granularity. | Choose W25Q80DVSSIG when maximum read bandwidth is critical and host MCU supports QSPI; retain AT45DB081B when buffer-assisted streaming and EEPROM-like update flexibility are required. |
Compared with AT45DB081E-RC, the AT45DB081B offers lower cost and proven maturity but lacks extended ESD protection; versus W25Q80DVSSIG, it trades raw speed for integrated buffering and simpler SPI-only host interface - making it preferable for resource-constrained MCUs without QSPI peripherals.
Availability
AT45DB081B is available at Aetrix Electronics and suitable for firmware storage, code shadowing, and data logging applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for AT45DB081B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology acquired Atmel in 2016 and maintains full support for the DataFlash product family, including documentation, errata, and long-term manufacturing commitments.
The AT45DB081B belongs to Microchip's legacy DataFlash series - engineered specifically for embedded systems needing SPI-based nonvolatile memory with integrated buffering and deterministic erase/program timing.
FAQ
What is the memory organization of the AT45DB081B?
The AT45DB081B organizes its 8 Mbit capacity as 4096 pages of 264 bytes each (8,650,752 bits total), with two additional 264-byte SRAM buffers. Pages are grouped into sectors and blocks (e.g., 8-page blocks), enabling flexible erase granularity. This structure supports both sequential access (continuous array read) and targeted updates (page/block erase), making the AT45DB081B well-suited for firmware and data storage where reliability and update safety are critical.
Does the AT45DB081B support true EEPROM emulation?
Yes, the AT45DB081B supports EEPROM emulation through its Read-Modify-Write operation: a page is transferred to a buffer, modified, then written back with built-in erase. This avoids full-chip or full-sector erases for small data changes. The AT45DB081B implements this using its dual buffers and status register (bit 6) to verify match results - enabling byte-level updates in applications like configuration storage where endurance and atomicity matter.
What are the key timing parameters for programming the AT45DB081B?
Programming the AT45DB081B is self-timed: buffer-to-page program with built-in erase completes in ≤20 ms (tEP), page erase in ≤15 ms (tPE), and block erase in ≤40 ms (tBE). These values are guaranteed across voltage and temperature ranges. The AT45DB081B uses the RDY/BUSY pin and status register bit 7 to signal completion - eliminating need for fixed delays and enabling precise host synchronization during firmware updates.
Can the AT45DB081B operate with a 5.0V microcontroller interface?
Yes - the AT45DB081B features 5.0V-tolerant inputs on SI, SCK, CS, RESET, and WP pins, allowing direct connection to 5.0V logic without level shifters. Its core operates from 2.5V–3.6V (or 2.7V–3.6V), so VCC must remain within that range. This tolerance simplifies mixed-voltage designs and improves noise immunity in industrial environments where the AT45DB081B is commonly deployed.
How does the continuous array read mode work in the AT45DB081B?
The AT45DB081B continuous array read mode (opcode 68H/E8H) allows uninterrupted sequential data streaming across page boundaries without reissuing addresses. After initial 24-bit address + 32 don't-care bits, each SCK pulse outputs the next byte - wrapping seamlessly from page end to next page start and finally from last byte back to first. This eliminates host address management overhead and enables efficient code shadowing, a key advantage distinguishing the AT45DB081B from standard SPI Flash devices.
AT45DB081B-RC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 28-SOIC (0.342", 8.69mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 8Mbit
- Memory Organization:
- 264 Bytes x 4096 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 20 MHz
- Write Cycle Time - Word, Page:
- 14ms
- Access Time:
- -
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOIC
AT45DB081B-RC FAQ
1.How can I place an order for AT45DB081B-RC through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB081B-RC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB081B-RC reliable?
The price and inventory of AT45DB081B-RC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB081B-RC is usually 5 days.
3.What payment methods are accepted for AT45DB081B-RC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB081B-RC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB081B-RC?
AT45DB081B-RC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB081B-RC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB081B-RC?
For technical support, including AT45DB081B-RC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB081B-RC requirements.
6.How does Aetrix verify that AT45DB081B-RC is sourced from the original manufacturer or authorized distributors?
All AT45DB081B-RC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB081B-RC meets industry standards.
7.What is the process for return or replacement of AT45DB081B-RC?
All AT45DB081B-RC units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB081B-RC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB081B-RC part is unused and in its original packaging.
Return procedure for AT45DB081B-RC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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