Renesas AT45DB081E-MHN2B-T

Overview

AT45DB081E-MHN2B-T from Renesas Electronics is an 8-Mbit serial DataFlash memory with two 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low deep power-down current of 400 nA (typical). It supports byte/page programming, flexible erase options (page/block/sector/chip), and hardware/software sector protection - deployed in embedded firmware storage, voice/image logging, and industrial data recorders.

For engineers reviewing the AT45DB081E-MHN2B-T datasheet, AT45DB081E-MHN2B-T pinout, AT45DB081E-MHN2B-T application, or AT45DB081E-MHN2B-T equivalent, key selection criteria include its dual-buffer interleaved write capability, factory-configurable 256- vs. 264-byte page size, 1.7 V minimum supply, JEDEC-standard ID read, and OTP security register with 64-byte unique identifier.

Technical Context

The AT45DB081E-MHN2B-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling concurrent receive-and-reprogram operations. Its RapidS™ mode delivers 85 MHz clock rate with 6 ns max clock-to-output time (tV), while low-power read mode operates at ≤15 MHz with reduced active current.

Memory organization comprises 4,096 pages × 256/264 bytes (8,650,752 bits total), plus 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable). Sector lockdown, individual sector protection, and hardware/software reset support secure, field-upgradable embedded storage.

Key Specifications

Pinout & Package

AT45DB081E-MHN2B-T uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm) with exposed thermal pad (NC or GND). Pin functions are defined per JEDEC-compliant serial Flash interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q80DVSSIG and SST26VF064B-104I/MF, the AT45DB081E-MHN2B-T uniquely delivers concurrent buffer writes, factory-configurable page size, and integrated OTP security - making it optimal for resource-constrained, high-integrity sequential data storage where write latency and identity binding are critical.

Availability

AT45DB081E-MHN2B-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, secure device identity, and embedded E2PROM emulation requiring stable component supply across industrial, medical, and IoT production programs.

Supply support for AT45DB081E-MHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.

The AT45DB081E-MHN2B-T belongs to Renesas' DataFlash® family - engineered specifically for high-reliability, low-pin-count, low-voltage sequential data storage in space- and power-constrained embedded systems.

FAQ

What is the default page size of the AT45DB081E-MHN2B-T, and can it be changed?

The AT45DB081E-MHN2B-T defaults to 264-byte pages but supports factory configuration for 256-byte pages. This setting is fixed at manufacturing and cannot be altered in-system. The 256-byte mode enables direct E2PROM emulation alignment, while 264-byte mode provides additional overhead space for metadata or ECC within each page - both configurations are fully supported by all AT45DB081E-MHN2B-T command sets and timing specifications.

Does the AT45DB081E-MHN2B-T support true byte-level writes like EEPROM?

The AT45DB081E-MHN2B-T does not support direct byte-level writes to Flash, but enables robust E2PROM emulation via its built-in read-modify-write command sequence (opcode 58h). This three-step operation uses one SRAM buffer to hold the target page, modifies selected bytes, then programs the updated page back to Flash - preserving full 100,000-cycle endurance and 20-year data retention without external firmware overhead.

How does the RapidS™ mode improve performance over standard SPI operation in the AT45DB081E-MHN2B-T?

RapidS™ mode in the AT45DB081E-MHN2B-T increases maximum clock frequency from 66 MHz (standard SPI) to 85 MHz and reduces clock-to-output time (tV) to 6 ns maximum. This enables higher sustained throughput for continuous array reads and buffer transfers, especially beneficial in real-time audio playback and high-speed data acquisition where deterministic timing and minimal jitter are required.

What security features are implemented in the AT45DB081E-MHN2B-T to protect stored data?

The AT45DB081E-MHN2B-T integrates multiple hardware-enforced security layers: individual sector protection (software/hardware controllable), permanent sector lockdown (irreversible read-only enforcement), and a 128-byte OTP security register containing 64 bytes of factory-programmed unique identifier plus 64 bytes of user-programmable space - all accessible only via dedicated, protected command opcodes and unaffected by standard erase operations.

Can the AT45DB081E-MHN2B-T operate reliably at 1.7 V, and what are the trade-offs?

Yes, the AT45DB081E-MHN2B-T is fully specified for 1.7 V–3.6 V operation, including all read, program, and erase functions. At 1.7 V, maximum clock frequency is reduced to 33 MHz in standard SPI mode (RapidS™ not available), and program/erase times increase by ~25% versus 3.3 V operation - but all timing margins and data integrity guarantees remain valid across the full industrial temperature range (–40°C to +85°C).