Renesas AT45DB081E-MHN-Y

Overview

AT45DB081E-MHN-Y from Renesas Electronics is an 8-Mbit serial DataFlash memory with dual 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), 85 MHz max clock rate, and 6 ns clock-to-output time. It supports RapidS™ high-speed read, page/block/sector/chip erase, and operates from 1.7 V to 3.6 V - used in embedded firmware storage, voice recording systems, and industrial data loggers requiring fast sequential access and low-power operation.

For engineers reviewing the AT45DB081E-MHN-Y datasheet, AT45DB081E-MHN-Y pinout, AT45DB081E-MHN-Y application, or AT45DB081E-MHN-Y equivalent, key selection criteria include its dual-buffer interleaved write capability, factory-configurable 256- vs 264-byte page size, ultra-deep power-down current (400 nA), sector lockdown security, and JEDEC-standard ID read support.

Technical Context

The AT45DB081E-MHN-Y implements a serial Flash architecture with two independent SRAM buffers enabling concurrent buffer write and main memory reprogramming. Its RapidS™ mode delivers high-frequency continuous array reads using opcodes 0Bh and 1Bh, while legacy and low-power modes (03h, 01h) provide flexibility across timing and power constraints.

It uses SPI-compatible three-wire communication (CS/SI/SO/SCK) with no address lines, relying on command-opcode + byte-address sequences. Sector protection is implemented via hardware WP pin control and software-programmable registers, including permanent lockdown for critical sectors and a 128-byte OTP security register with 64-byte factory-unique ID.

Key Specifications

Pinout & Package

AT45DB081E-MHN-Y is packaged in an 8-pad Ultra-thin DFN (5 × 6 × 0.6 mm) with exposed thermal pad (NC or GND). Pin functions are defined per JEDEC-compliant layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with AT45DB081D-MHN-Y and W25Q80DVSSIG, the AT45DB081E-MHN-Y uniquely combines dual-SRAM-buffer concurrency, RapidS™ high-speed read, ultra-low deep power-down, and programmable sector lockdown - making it optimal for secure, streaming-capable embedded storage where timing predictability and data integrity are critical.

Availability

AT45DB081E-MHN-Y is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, secure configuration storage, and embedded audio playback requiring stable component supply across industrial temperature range (−40°C to +85°C) and RoHS-compliant packaging.

Supply support for AT45DB081E-MHN-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT45DB081E-MHN-Y belongs to Renesas' DataFlash® family, designed specifically for high-reliability, low-pin-count sequential storage in resource-constrained embedded systems requiring fast streaming, security, and ultra-low power.

FAQ

What is the default page size configuration for the AT45DB081E-MHN-Y?

The AT45DB081E-MHN-Y ships with a default page size of 264 bytes, matching the standard DataFlash format. It can be factory-configured for 256-byte pages to align with legacy binary compatibility requirements. Page size is fixed per unit and cannot be changed in-system.

Does the AT45DB081E-MHN-Y support true simultaneous read and write operations?

The AT45DB081E-MHN-Y does not perform simultaneous main-memory read and write, but supports true interleaved operation: while one SRAM buffer is being written via SI, the other buffer can be transferred to main memory - or main memory pages can be read out via SO - enabling continuous data flow without CPU blocking.

How is sector protection implemented on the AT45DB081E-MHN-Y?

Sector protection on the AT45DB081E-MHN-Y uses both hardware and software methods: the WP pin enables/disables protection globally, while the Sector Protection Register allows per-sector locking. Once frozen via the Sector Lockdown command, protected sectors become permanently read-only - irreversible even by future commands.

What is the purpose of the 128-byte Security Register in the AT45DB081E-MHN-Y?

The 128-byte Security Register in the AT45DB081E-MHN-Y contains 64 bytes of factory-programmed unique identifier (for device authentication) and 64 bytes of user-programmable space (for keys or certificates). It is one-time programmable and supports secure boot, anti-cloning, and firmware validation workflows.

Can the AT45DB081E-MHN-Y operate reliably at 1.7 V during all functions?

Yes - the AT45DB081E-MHN-Y is fully specified for 1.7 V to 3.6 V operation across all functions: read, program, and erase. At 1.7 V, maximum clock frequency is reduced to 33 MHz (RapidS™ mode disabled), but all command sets, buffer operations, and protection features remain functional.