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Renesas AT45DB081E-SHN2B-T

Part No.:
AT45DB081E-SHN2B-T
Manufacturer:
Renesas
Category:
Memory
Package:
8-SOIC (0.209", 5.30mm Width)
Datasheet:
AetrixAT45DB081E-SHN2B-T.pdf
Description:
IC FLASH 8MBIT SPI 85MHZ 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,142

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Product details

Overview

AT45DB081E-SHN2B-T from Renesas Electronics is an 8-Mbit serial DataFlash memory with 256/264-byte page architecture, SPI interface (modes 0 and 3), and RapidS™ high-speed operation up to 85 MHz. It features two independent 256/264-byte SRAM buffers enabling concurrent read/write operations, ultra-low deep power-down current (400 nA typ), and industrial temperature support (–40°C to +85°C). It is used in embedded firmware storage, voice/data logging, and boot code retention where sequential access, low pin count, and robust data retention (20 years) are critical.

For engineers reviewing the AT45DB081E-SHN2B-T datasheet, AT45DB081E-SHN2B-T pinout, AT45DB081E-SHN2B-T application, or AT45DB081E-SHN2B-T equivalent, this page delivers verified specifications including page size configuration (256 vs. 264 bytes), buffer-to-memory programming latency, sector lockdown security, JEDEC ID compliance, and SOIC-8 (0.208" wide) package mapping - all confirmed from Renesas DS-AT45DB081E-028 Rev. N.

Technical Context

The AT45DB081E-SHN2B-T implements a dual-buffered serial Flash architecture with dedicated SRAM buffers that operate independently of main memory, enabling true interleaved write operations without blocking reads. Its RapidS™ mode supports high-frequency continuous array reads using opcodes 0Bh and 1Bh, achieving up to 85 MHz clock rates with 6 ns clock-to-output timing (tV).

It supports flexible erase granularity - page (256/264 B), block (2 kB), sector (64 kB), and full chip (8 Mbits) - with suspend/resume capability for both program and erase cycles. Sector protection is implemented via hardware WP pin control and software-configurable registers, including permanent lockdown of individual sectors using a dedicated 128-byte OTP security register.

Key Specifications

Parameter Value and Actual Design Meaning
Memory capacity 8,650,752 bits (8 Mbits + 256 kbits extra), organized as 4,096 pages × 256 or 264 bytes
Interface SPI-compatible, supports modes 0 and 3; no external address lines required
Max clock frequency 85 MHz in RapidS™ high-frequency mode (0Bh/1Bh opcodes)
Page size User configurable: 256 bytes (factory pre-configurable) or 264 bytes (default)
Power supply Single 1.7 V – 3.6 V supply; no high-voltage programming required
Deep power-down current 400 nA typical - enables ultra-low energy retention in battery-powered systems
Data retention 20 years at +85°C - validated for long-life industrial deployments
Endurance 100,000 program/erase cycles per page minimum - suitable for frequent firmware updates

Pinout & Package

AT45DB081E-SHN2B-T is packaged in an 8-lead SOIC (0.208" wide, JEDEC MS-012), with pin 1 marked by a notch or dot. The package is RoHS-compliant, halide-free, and Pb-free.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable; high-to-low transition initiates command sequence; deassertion places device in standby (SO tri-stated)
SCK Serial Clock Input clock synchronizing all SPI transfers; supports up to 85 MHz in RapidS™ mode
SI Serial Input Data input line for commands, addresses, and write data; sampled on SCK rising edge (mode 0) or falling edge (mode 3)
SO Serial Output Data output line for read data and status; driven only when CS is asserted; high-impedance when CS is high
WP Write Protect Hardware sector protection enable; low = protection active; overrides software sector lock settings
RESET Reset Input Active-low hardware reset; forces device into known state and clears internal status flags
VCC Power Supply 1.7 V – 3.6 V single supply; powers core, I/O, and buffers
GND Ground Reference return path for VCC and all signal pins; must be low-impedance for stable SPI timing

Key Features

Feature Design Value
Dual SRAM buffers (256/264 B each) Enables simultaneous data reception in one buffer while reprogramming main memory from the other - eliminates write stalls in streaming applications
RapidS™ high-speed read mode Supports 85 MHz continuous array reads with opcodes 0Bh/1Bh - reduces firmware load time by >3× vs. legacy E8h mode
Program/erase suspend/resume Allows interrupting long erase cycles to service urgent read requests - critical for real-time embedded systems
128-byte OTP Security Register Contains 64-byte factory-unique ID + 64-byte user-programmable space - enables secure device authentication and binding
Individual sector lockdown Makes any memory sector permanently read-only after freeze command - prevents accidental or malicious overwrite of boot code or calibration data
Ultra-deep power-down (400 nA) Reduces quiescent current below microcontroller RTC domain levels - extends shelf life and battery runtime in always-off systems

Applications

Firmware Storage Voice/Data Logging

Use Scenario: Storing and updating bootloader, application firmware, and configuration parameters in industrial PLCs and medical devices.

IC Role / Device Role / Timing Role: Nonvolatile sequential code storage with in-system reprogrammability via SPI; supports rapid page rewrites during field upgrades.

Use Value: Eliminates need for parallel NOR Flash or external EEPROM; 100K endurance ensures reliable over-the-air (OTA) update cycles across product lifetime.

Use Scenario: Capturing sensor telemetry or audio snippets in battery-powered environmental monitors and smart meters.

IC Role / Device Role / Timing Role: High-reliability sequential data sink with low-power Deep Power-Down mode between sampling intervals.

Use Value: 400 nA ultra-deep power-down current extends battery life to multi-year operation; dual buffers allow gapless recording during flash reprogramming.

Boot Code Retention E2PROM Emulation

Use Scenario: Holding immutable boot code and secure key material in automotive ECUs and IoT gateways.

IC Role / Device Role / Timing Role: Read-only memory region protected by hardware WP pin and sector lockdown - immune to software corruption.

Use Value: Permanent sector lockdown prevents unauthorized modification of boot images; 20-year data retention guarantees integrity across vehicle lifecycle.

Use Scenario: Simulating byte-alterable EEPROM behavior for parameter storage in consumer electronics and home automation hubs.

IC Role / Device Role / Timing Role: Implements self-contained read-modify-write using internal buffers - no host CPU intervention needed for single-byte updates.

Use Value: Reduces host MCU firmware complexity; avoids wear-leveling algorithms; achieves EEPROM-like usability with Flash density and cost advantages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
AT45DB081D-SHN2B-T Predecessor generation; max clock 66 MHz; no RapidS™ mode; 264-byte pages only; 1 µA deep power-down (vs. 400 nA) Lacks high-speed continuous read and ultra-low power modes - unsuitable for latency-sensitive or battery-critical designs Select only if legacy design compatibility or cost sensitivity outweighs performance and power advantages of AT45DB081E-SHN2B-T
W25Q80DVSSIQ Standard SPI NOR Flash; 8 Mbit; 104 MHz max; no dual buffers; no RapidS™; no sector lockdown; 1 µA deep power-down Optimized for random-access code execution (XIP); lacks sequential streaming optimizations and hardware security features Choose for execute-in-place (XIP) boot applications requiring fast random reads; avoid when concurrent buffer operations or permanent sector protection are required

Compared with AT45DB081D-SHN2B-T and W25Q80DVSSIQ, the AT45DB081E-SHN2B-T uniquely combines dual-buffered sequential access, RapidS™ high-speed reads, ultra-low 400 nA deep power-down, and hardware-enforced sector lockdown - making it the only option among the three for streaming firmware updates with guaranteed boot integrity in constrained power environments.

Availability

AT45DB081E-SHN2B-T is available at Aetrix Electronics and suitable for industrial control systems, medical data loggers, and automotive telematics modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT45DB081E-SHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT45DB081E belongs to Renesas' DataFlash® family, designed specifically for high-reliability, low-pin-count sequential data storage in resource-constrained embedded systems requiring robust security and ultra-low power operation.

FAQ

What is the default page size configuration for AT45DB081E-SHN2B-T?

The AT45DB081E-SHN2B-T ships with a default page size of 264 bytes, but it can be factory pre-configured for 256-byte pages. This setting is fixed at manufacturing and cannot be changed in-system. Both configurations are supported by all command sets, and the device automatically adapts buffer and addressing logic accordingly. The AT45DB081E-SHN2B-T datasheet (DS-AT45DB081E-028 Rev. N, Table 22) confirms this dual-mode capability and specifies opcode behavior for each page size.

Does AT45DB081E-SHN2B-T support true SPI mode 3 operation?

Yes, AT45DB081E-SHN2B-T fully supports SPI mode 3 (CPOL=1, CPHA=1), where data are sampled on the falling edge of SCK and shifted out on the rising edge. This is explicitly documented in the "Features" section (page 1) and verified in Figure 31 ("Waveform 2 = SPI Mode 3 Compatible") and Table 27 ("Read Commands"). The device also supports mode 0, giving designers flexibility to match host controller requirements without level-shifting or protocol translation.

How does the dual-buffer architecture improve write throughput in AT45DB081E-SHN2B-T?

The AT45DB081E-SHN2B-T uses two independent 256/264-byte SRAM buffers to decouple host data ingestion from main memory programming. While one buffer accepts new data via SI, the other can simultaneously transfer its contents to main memory - eliminating idle time between page writes. This interleaving enables sustained streaming write rates far exceeding single-buffer Flash devices. The AT45DB081E-SHN2B-T datasheet (page 6, "Description") quantifies this benefit for continuous data logging and firmware update scenarios.

Can AT45DB081E-SHN2B-T be used for secure key storage?

Yes, AT45DB081E-SHN2B-T includes a 128-byte One-Time Programmable (OTP) Security Register with 64 bytes factory-programmed with a unique identifier and 64 bytes user-programmable. Once written, OTP bytes cannot be altered - making them suitable for cryptographic keys, device certificates, or license tokens. Sector lockdown further protects associated memory regions. These features are detailed in Section 9 ("Security Features") and Tables 19–20 of the AT45DB081E-SHN2B-T datasheet.

What is the purpose of the RESET pin on AT45DB081E-SHN2B-T?

The RESET pin on AT45DB081E-SHN2B-T provides hardware-level initialization: asserting it low forces the device into a known operational state, clears internal status flags (including busy and error bits), and resets command sequencing logic. Unlike software reset (opcode F0h), hardware RESET ensures deterministic recovery from power transients or bus contention. Its function is defined in Section 14 ("Software Reset") and Figure 23 of the AT45DB081E-SHN2B-T datasheet, confirming compatibility with system-level reset controllers.

AT45DB081E-SHN2B-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.209", 5.30mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
8Mbit
Memory Organization:
256 Bytes x 4096 pages
Memory Interface:
SPI
Clock Frequency:
85 MHz
Write Cycle Time - Word, Page:
8µs, 4ms
Access Time:
-
Voltage - Supply:
1.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AT45DB081E-SHN2B-T FAQ

1.How can I place an order for AT45DB081E-SHN2B-T through Aetrix?

Please submit a Request for Quotation (RFQ) for AT45DB081E-SHN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT45DB081E-SHN2B-T reliable?

The price and inventory of AT45DB081E-SHN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB081E-SHN2B-T is usually 5 days.

3.What payment methods are accepted for AT45DB081E-SHN2B-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB081E-SHN2B-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT45DB081E-SHN2B-T?

AT45DB081E-SHN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT45DB081E-SHN2B-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT45DB081E-SHN2B-T?

For technical support, including AT45DB081E-SHN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB081E-SHN2B-T requirements.

6.How does Aetrix verify that AT45DB081E-SHN2B-T is sourced from the original manufacturer or authorized distributors?

All AT45DB081E-SHN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB081E-SHN2B-T meets industry standards.

7.What is the process for return or replacement of AT45DB081E-SHN2B-T?

All AT45DB081E-SHN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB081E-SHN2B-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT45DB081E-SHN2B-T part is unused and in its original packaging.

Return procedure for AT45DB081E-SHN2B-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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