Renesas AT45DB081E-SHNHC-T

Overview

AT45DB081E-SHNHC-T from Renesas Electronics is an 8-Mbit serial DataFlash memory with dual 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), 1.7–3.6 V single supply, and RapidS™ high-speed operation up to 85 MHz. It delivers 6 ns clock-to-output timing, supports page/block/sector/chip erase, and enables concurrent buffer write + main memory reprogramming - ideal for embedded firmware storage and real-time data logging in space-constrained industrial controllers.

For engineers reviewing the AT45DB081E-SHNHC-T datasheet, AT45DB081E-SHNHC-T pinout, AT45DB081E-SHNHC-T application, or AT45DB081E-SHNHC-T equivalent, key selection criteria include SPI timing compliance (tV ≤ 6 ns), ultra-low deep power-down current (400 nA typ), configurable 256/264-byte page size, sector lockdown capability, and OTP security register usage for device authentication.

Technical Context

The AT45DB081E-SHNHC-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling true interleaved read-modify-write operations. Its RapidS™ mode supports high-frequency continuous array reads using opcodes 0Bh and 1Bh, while legacy and low-power modes (01h, 03h, E8h) provide flexibility across performance and energy constraints.

Memory organization comprises 4,096 pages × 256/264 bytes, plus 256 kbits extra capacity. Sector protection is implemented via hardware WP pin control and software-configurable registers, with permanent lockdown available per sector. The device uses JEDEC-standard Manufacturer/Device ID (0x1F 0x84) and supports full industrial temperature range (−40°C to +85°C).

Key Specifications

Pinout & Package

AT45DB081E-SHNHC-T is packaged in an 8-lead SOIC (0.150" wide), RoHS-compliant, green plastic package with standard JEDEC footprint. Pin functions are fully defined per Table 1 of DS-AT45DB081E-028 Rev. N.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q80DVSSIG and SST26VF064B-104I/MF, the AT45DB081E-SHNHC-T uniquely combines dual SRAM buffers for zero-gap streaming, RapidS™-optimized timing, and factory-programmed unique ID - making it optimal for resource-constrained, security-aware, real-time embedded systems requiring deterministic write latency.

Availability

AT45DB081E-SHNHC-T is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, and automotive telematics requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AT45DB081E-SHNHC-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The AT45DB081E belongs to Renesas' DataFlash® family, designed specifically for high-reliability, low-pin-count serial Flash applications where sequential access, buffer-enabled streaming, and integrated security features are critical.

FAQ

What is the default page size configured in the AT45DB081E-SHNHC-T?

The AT45DB081E-SHNHC-T ships with 264-byte pages as the default configuration, matching the standard DataFlash® page format. This setting is factory-programmed and can be changed to 256-byte binary mode via the Buffer and Page Size Configuration command (53h), but doing so alters addressing and command compatibility. The AT45DB081E-SHNHC-T datasheet specifies that 264-byte mode is used unless explicitly reconfigured.

Does the AT45DB081E-SHNHC-T support true SPI mode 3 (CPOL=1, CPHA=0)?

Yes, the AT45DB081E-SHNHC-T fully supports SPI mode 3: clock polarity high (CPOL=1) and sampling on first clock edge (CPHA=0). This is confirmed in the Features section of DS-AT45DB081E-028 Rev. N, which explicitly states "Supports SPI modes 0 and 3". Mode 3 operation is validated across all read, write, and status commands, including RapidS™ sequences.

How does the AT45DB081E-SHNHC-T handle power loss during a page program operation?

The AT45DB081E-SHNHC-T uses self-timed internal charge pumps and automatic write verification. If power is lost mid-program, the page remains unmodified or partially programmed - but the device guarantees atomicity at the page level only if the operation completes successfully. No internal rollback or ECC correction is performed; system-level error detection (e.g., CRC on stored data) is required. The AT45DB081E-SHNHC-T datasheet confirms that incomplete writes result in undefined data, not guaranteed erased state.

Can the AT45DB081E-SHNHC-T's OTP Security Register be reprogrammed after initial write?

No - the 128-byte OTP Security Register in the AT45DB081E-SHNHC-T is one-time programmable. Once any byte is written (from FFh to non-FFh), it cannot be altered again. The 64-byte factory-programmed segment contains a unique device identifier and is pre-written at wafer test; the 64-byte user segment can be written once per byte. The AT45DB081E-SHNHC-T datasheet states this is irreversible and requires no additional voltage.

What is the purpose of the RESET pin on the AT45DB081E-SHNHC-T, and how does it differ from CS deassertion?

The RESET pin on the AT45DB081E-SHNHC-T provides asynchronous hardware reset, returning the device to its power-on state (including clearing status flags and aborting ongoing operations) without cycling VCC. In contrast, CS deassertion only places the device in standby mode (25 µA) and tri-states SO - it does not reset internal state or clear pending commands. The AT45DB081E-SHNHC-T datasheet specifies RESET is active-low and must be held low for ≥100 ns to guarantee reset completion.