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Renesas AT45DB081E-SSHN2B-T
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- Part No.:
- AT45DB081E-SSHN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AT45DB081E-SSHN2B-T.pdf
- Description:
- IC FLASH 8MBIT SPI 85MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:25,869
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Product details
Overview
AT45DB081E-SSHN2B-T from Renesas Electronics is an 8-Mbit serial DataFlash memory with two 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), 1.7–3.6 V single-supply operation, and RapidS™ high-speed read capability up to 85 MHz - used for firmware storage, voice/image buffering, and E²PROM emulation in embedded systems.
For engineers reviewing the AT45DB081E-SSHN2B-T datasheet, AT45DB081E-SSHN2B-T pinout, AT45DB081E-SSHN2B-T application, or AT45DB081E-SSHN2B-T equivalent, key selection criteria include page size configurability (256 vs. 264 bytes), dual-buffer interleaved write support, ultra-low deep power-down current (400 nA), sector lockdown security, and industrial temperature range compliance.
Technical Context
The AT45DB081E-SSHN2B-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling concurrent data reception and main memory reprogramming. Its RapidS™ mode supports continuous array reads at up to 85 MHz with 6 ns clock-to-output timing.
It supports flexible erase granularity - page (256/264 B), block (2 kB), sector (64 kB), and chip (8 Mbit) - plus program/erase suspend/resume, hardware/software sector protection, and a 128-byte OTP security register containing 64 bytes of factory-unique ID and 64 bytes user-programmable space.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 8,650,752 bits (8 Mbit + 256 kbit extra), organized as 4,096 pages × 256 or 264 bytes |
| Supply voltage | 1.7 V to 3.6 V - enables direct interfacing with low-voltage microcontrollers without level shifting |
| Max read speed | 85 MHz (RapidS™ mode) - reduces firmware load latency in real-time boot applications |
| Power-down current | 400 nA typical (ultra-deep power-down) - extends battery life in always-on sensor nodes |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention - suitable for field-upgradable firmware |
| Operating temperature | −40°C to +85°C - certified for industrial-grade embedded deployments |
| Page size options | User-configurable: 256 bytes (factory pre-set) or 264 bytes (default) - affects address alignment and buffer usage |
Pinout & Package
AT45DB081E-SSHN2B-T is packaged in an 8-pad Ultra-thin DFN (5 × 6 × 0.6 mm) with exposed thermal pad (NC or GND). Pin functions are defined per JEDEC standard for serial Flash devices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; high-to-low transition initiates command sequence; deassertion places device in standby (SO tri-stated) |
| SCK | Serial Clock | Input clock synchronizing all SPI transfers; supports modes 0 and 3 (CPOL=0/1, CPHA=0/1) |
| SI | Serial Input | Data input for commands, addresses, and buffer writes; sampled on SCK rising/falling edge per mode |
| SO | Serial Output | Data output for reads and status; driven only when CS is asserted; high-impedance otherwise |
| WP | Write Protect | Hardware sector protection control; low = enables sector lockdown and protection register writes |
| RESET | Reset Input | Active-low hardware reset; forces device into known state and clears internal status flags |
| VCC | Power Supply | 1.7–3.6 V supply; powers core logic, Flash array, and SRAM buffers |
| GND | Ground | Reference for all I/O and internal circuitry; thermal pad may be connected to GND for improved thermal performance |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (256/264 B each) | Enables true interleaved writes: receive new data into one buffer while programming the other to Flash - eliminates write stalls in streaming audio/video systems |
| RapidS™ high-speed read | 85 MHz continuous array read with 6 ns tV - achieves >10 MB/s effective throughput for fast boot code loading |
| Configurable page size | Factory-set 256-byte or default 264-byte pages - allows optimization between density efficiency and ECC overhead in firmware partitions |
| Sector lockdown & OTP security register | Per-sector permanent read-only lock + 128-byte OTP (64-byte unique ID + 64-byte user space) - meets secure boot and anti-cloning requirements |
| Ultra-deep power-down (400 nA) | Reduces quiescent current by >99% vs. standard standby (25 µA), enabling multi-year battery operation in IoT endpoints |
| Program/erase suspend/resume | Allows interrupting long erase/write operations to service time-critical reads - essential for real-time data loggers |
Applications
| Firmware Storage | Audio/Imaging Buffer |
|---|---|
Use Scenario: Storing boot code and application firmware for microcontrollers in industrial PLCs. IC Role / Device Role / Timing Role: Nonvolatile sequential storage accessed during cold start and over-the-air updates. Use Value: Dual-buffer architecture enables background firmware patching without halting system operation. |
Use Scenario: Capturing and buffering voice recordings in smart doorbells or surveillance cameras. IC Role / Device Role / Timing Role: High-throughput sequential write buffer with rapid readback for playback. Use Value: RapidS™ 85 MHz read speed ensures zero-latency audio streaming from Flash to DAC. |
| E²PROM Emulation | Secure Boot Configuration |
Use Scenario: Replacing discrete EEPROM in medical sensors requiring byte-level parameter updates. IC Role / Device Role / Timing Role: Emulates random-access EEPROM via built-in read-modify-write algorithm. Use Value: Eliminates need for external EEPROM while maintaining field-updatable calibration data. |
Use Scenario: Storing cryptographic keys and boot validation hashes in automotive telematics units. IC Role / Device Role / Timing Role: Secure nonvolatile storage with hardware-enforced sector lockdown. Use Value: 64-byte factory-unique ID and programmable OTP prevent cloning and ensure chain-of-trust integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB081D-SSHN2B-T | Predecessor generation; lacks RapidS™ mode; max read speed 66 MHz; no ultra-deep power-down (400 nA) | Lower-performance legacy designs where 85 MHz read speed and sub-µA power-down are not required | Select only if backward compatibility with older AT45DB081D-based PCBs is mandatory |
| W25Q80DVSSIG | Standard SPI NOR Flash; no SRAM buffers; no RapidS™; 104 MHz max read; no sector lockdown or OTP security register | Cost-sensitive consumer electronics where advanced security and buffer interleaving are unnecessary | Choose when prioritizing raw read bandwidth and broad ecosystem support over embedded security features |
Compared with AT45DB081D-SSHN2B-T, the AT45DB081E-SSHN2B-T delivers 29% faster read throughput and 98% lower deep-sleep current; versus W25Q80DVSSIG, it provides hardware-secured sector lockdown and dual-buffer streaming - critical for safety-certified firmware updates.
Availability
AT45DB081E-SSHN2B-T is available at Aetrix Electronics and suitable for industrial control firmware storage, medical device data logging, automotive telematics boot memory, and secure IoT endpoint configuration requiring stable component supply across extended product lifecycles.
Supply support for AT45DB081E-SSHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.
The AT45DB081E-SSHN2B-T belongs to Renesas' DataFlash® family - designed specifically for high-reliability, low-pin-count, sequential-access nonvolatile storage in resource-constrained embedded systems.
FAQ
What is the page size configuration of the AT45DB081E-SSHN2B-T?
The AT45DB081E-SSHN2B-T supports two page sizes: 256 bytes (factory pre-configured option) or 264 bytes (default). The selected size determines memory addressing and buffer alignment. Configuration is performed via the Buffer and Page Size Configuration command (0x3D) and persists after power cycle. This flexibility allows optimization for ECC schemes or legacy software compatibility.
Does the AT45DB081E-SSHN2B-T support true simultaneous read and write operations?
Yes - the AT45DB081E-SSHN2B-T uses two independent 256/264-byte SRAM buffers to enable true concurrent operation: one buffer can accept incoming data via SPI while the other is being programmed into main Flash memory. This interleaving eliminates write latency bottlenecks in continuous data streams such as audio recording or sensor logging.
How does the RapidS™ mode improve performance in the AT45DB081E-SSHN2B-T?
RapidS™ mode enables continuous array read at up to 85 MHz with a 6 ns clock-to-output delay (tV), achieving significantly higher effective throughput than standard SPI reads. It uses optimized command opcodes (0x0B, 0x1B) and internal pipeline enhancements - critical for fast firmware loading and real-time media playback where latency must be minimized.
What security features are implemented in the AT45DB081E-SSHN2B-T?
The AT45DB081E-SSHN2B-T includes hardware sector lockdown (permanently read-only sectors), individual sector protection registers, and a 128-byte OTP Security Register - with 64 bytes factory-programmed with a unique identifier and 64 bytes user-programmable. These features support secure boot, anti-counterfeiting, and tamper-resistant configuration storage.
What is the minimum supply voltage required for full functionality of the AT45DB081E-SSHN2B-T?
The AT45DB081E-SSHN2B-T operates across a 1.7 V to 3.6 V supply range. At 1.7 V, all functions - including program, erase, and RapidS™ read - remain fully specified per datasheet. This ultra-low minimum voltage enables direct integration with energy-harvesting systems and single-cell Li-ion/LiPo battery-powered devices without voltage regulation overhead.
AT45DB081E-SSHN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 8Mbit
- Memory Organization:
- 256 Bytes x 4096 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 4ms
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB081E-SSHN2B-T FAQ
1.How can I place an order for AT45DB081E-SSHN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB081E-SSHN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB081E-SSHN2B-T reliable?
The price and inventory of AT45DB081E-SSHN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB081E-SSHN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB081E-SSHN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB081E-SSHN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB081E-SSHN2B-T?
AT45DB081E-SSHN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB081E-SSHN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB081E-SSHN2B-T?
For technical support, including AT45DB081E-SSHN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB081E-SSHN2B-T requirements.
6.How does Aetrix verify that AT45DB081E-SSHN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB081E-SSHN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB081E-SSHN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB081E-SSHN2B-T?
All AT45DB081E-SSHN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB081E-SSHN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB081E-SSHN2B-T part is unused and in its original packaging.
Return procedure for AT45DB081E-SSHN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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