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Renesas AT45DB081E-UUN2B-T
- Part No.:
- AT45DB081E-UUN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UFBGA, WLCSP
- Datasheet:
-
AT45DB081E-UUN2B-T.pdf
- Description:
- IC FLASH 8MBIT SPI 85MHZ 8WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:3,749
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Product details
Overview
AT45DB081E-UUN2B-T from Renesas Electronics is an 8-Mbit serial DataFlash memory with two 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and ultra-low deep power-down current of 400 nA (typical). It supports flexible page sizes (256 or 264 bytes), continuous array read, and program/erase suspend/resume - deployed in embedded firmware storage and voice/data logging systems.
For engineers reviewing the AT45DB081E-UUN2B-T datasheet, AT45DB081E-UUN2B-T pinout, AT45DB081E-UUN2B-T application, or AT45DB081E-UUN2B-T equivalent, key selection criteria include SPI timing compliance (tV ≤ 6 ns), dual-buffer interleaved write capability, sector lockdown security, OTP security register, and industrial temperature support (–40°C to +85°C).
Technical Context
The AT45DB081E-UUN2B-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling concurrent data reception and main memory reprogramming. Its RapidS™ mode delivers high-frequency read throughput via optimized SPI command sequences (0Bh/1Bh opcodes) while maintaining full backward compatibility with legacy SPI modes.
Memory organization comprises 4,096 pages × 256/264 bytes, plus 256 kbits extra capacity. Erase granularity includes page (256/264 B), block (2 kB), sector (64 kB), and chip (8 Mbits), all self-timed and compatible with suspend/resume during active operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 8,650,752 bits (8-Mbit main + 256 kbits extra) |
| Page size | Factory-configurable 256 or 264 bytes - determines addressing alignment and buffer usage |
| Max clock frequency | 85 MHz (RapidS™ mode) - enables high-throughput streaming without parallel bus overhead |
| Read access time | tV ≤ 6 ns - ensures sub-12 ns cycle time at 85 MHz for deterministic timing-critical reads |
| Deep power-down current | 400 nA typical - extends battery life in always-on sensor nodes and portable loggers |
| Endurance & retention | 100,000 program/erase cycles per page; 20-year data retention - suitable for field-updatable firmware |
| Operating voltage | 1.7 V to 3.6 V single supply - interoperable with 1.8 V and 3.3 V logic domains without level shifters |
Pinout & Package
AT45DB081E-UUN2B-T uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm), RoHS-compliant and halide-free. The bottom thermal pad is unconnected (NC) or optionally tied to GND for mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; high-to-low transition initiates command sequence; low-to-high terminates operation |
| SCK | Serial Clock | Input clock synchronizing all SPI transfers; supports modes 0 and 3 (CPOL/CPHA) |
| SI | Serial Input | Data input for commands, addresses, and buffer writes; latched on SCK rising/falling edge per mode |
| SO | Serial Output | Tri-state data output; high-impedance when CS is deasserted |
| WP | Write Protect | Hardware sector protection control; low = protection enabled per sector lock configuration |
| RESET | Reset Input | Active-low hardware reset; resets internal state machine and exits Deep Power-Down |
| VCC | Power Supply | 1.7–3.6 V single supply; powers core, I/O, and charge pump for erase/program |
| GND | Ground | Reference for all signals and internal circuitry; must be low-impedance return path |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent SRAM buffers | Enables true interleaved write: receive new data into one buffer while programming the other to Flash - eliminates write latency gaps in continuous streams |
| RapidS™ high-speed read | Supports 85 MHz clock with dedicated opcodes (0Bh/1Bh); achieves >8 MB/s effective throughput for firmware image loading |
| User-configurable page size | Factory-set 256 or 264 bytes - allows optimization for byte-aligned data structures or legacy DataFlash compatibility |
| Program/erase suspend/resume | Allows interrupting long erase/write operations to service urgent reads - critical for real-time logging with guaranteed response |
| 128-byte OTP Security Register | 64-byte factory-unique ID + 64-byte user-programmable space - enables secure device binding and firmware anti-cloning |
| Sector lockdown | Makes any sector permanently read-only after freeze command - prevents accidental or malicious overwrite of boot code or calibration data |
Applications
| Firmware Storage | Voice/Data Logging |
|---|---|
Use Scenario: Storing and updating microcontroller boot code and application firmware in industrial PLCs. IC Role / Device Role / Timing Role: Non-volatile serial code storage with in-system reprogrammability and sector lockdown for bootloader protection. Use Value: Enables field firmware upgrades without external programmers; 100K endurance supports frequent updates over product lifetime. |
Use Scenario: Continuous audio recording in battery-powered environmental sensors. IC Role / Device Role / Timing Role: High-reliability sequential data sink using dual-buffer interleaving to sustain uninterrupted 16-bit PCM stream at 44.1 kHz. Use Value: 400 nA deep power-down current extends 10-year battery life; RapidS™ read accelerates playback startup. |
| Embedded Configuration Storage | Secure Device Identity |
Use Scenario: Retaining calibrated sensor offsets and network credentials across power cycles in smart meters. IC Role / Device Role / Timing Role: EEPROM-emulation via read-modify-write using SRAM buffers and page-level writes. Use Value: Eliminates need for separate EEPROM; 256-byte page granularity matches typical config record size. |
Use Scenario: Binding firmware images to specific hardware units in medical IoT devices. IC Role / Device Role / Timing Role: Secure identity anchor via 64-byte factory-programmed unique ID and user-writable OTP space. Use Value: Prevents unauthorized firmware reuse; sector lockdown protects ID region from overwrite. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB081D-UUN2B-T | Predecessor generation; max 66 MHz clock; no RapidS™; 1 µA deep power-down (vs. 400 nA) | Lacks high-speed streaming capability; lower endurance (10K cycles vs. 100K) | Select only if legacy design compatibility or cost sensitivity outweighs performance and longevity needs. |
| W25Q80DVSSIG | Standard SPI NOR Flash; 8 Mbit; no SRAM buffers; no RapidS™; 25 µA deep power-down (vs. 400 nA) | Requires external buffering logic for continuous writes; no built-in read-modify-write or sector lockdown | Choose when random-access patterns dominate or when standard SPI NOR ecosystem tools are required. |
Compared with AT45DB081D-UUN2B-T and W25Q80DVSSIG, the AT45DB081E-UUN2B-T uniquely combines dual-SRAM buffering, RapidS™ speed, ultra-low deep power-down, and hardware-enforced sector lockdown - making it optimal for streaming, secure, and battery-constrained embedded storage.
Availability
AT45DB081E-UUN2B-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, embedded configuration storage, and secure device identity applications requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.
Supply support for AT45DB081E-UUN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets.
The AT45DB081E-UUN2B-T belongs to Renesas' DataFlash® family, designed specifically for high-reliability, low-pin-count, sequential-access storage in resource-constrained embedded systems where power efficiency, security, and streaming performance are critical.
FAQ
What is the page size configuration of the AT45DB081E-UUN2B-T?
The AT45DB081E-UUN2B-T supports factory-configurable page sizes of either 256 bytes or 264 bytes. Default configuration is 264 bytes per page, but it can be pre-set to 256 bytes for binary-aligned addressing. This setting is fixed at manufacture and cannot be changed in-circuit. The AT45DB081E-UUN2B-T datasheet specifies that page size affects command addressing and buffer transfer behavior - critical for firmware partitioning and E2PROM emulation.
Does the AT45DB081E-UUN2B-T support true simultaneous read and write operations?
The AT45DB081E-UUN2B-T does not perform simultaneous Flash read and write, but enables concurrent data flow via its two independent SRAM buffers. While one buffer receives incoming data over SPI, the other can be programmed into Flash - achieving interleaved throughput. This is confirmed in the AT45DB081E-UUN2B-T datasheet Section 1 ("Description") and Figure 2 (Block Diagram), where buffer arbitration logic is explicitly shown.
How does the RapidS™ feature improve performance in the AT45DB081E-UUN2B-T?
RapidS™ in the AT45DB081E-UUN2B-T reduces instruction overhead and increases effective bandwidth by using streamlined opcodes (0Bh, 1Bh) for continuous array reads at up to 85 MHz. Unlike legacy E8h reads, RapidS™ eliminates dummy cycles and enables tighter timing - delivering >8 MB/s sustained read rates. This is validated in AT45DB081E-UUN2B-T datasheet Figures 41–43 and Section 22.
What security mechanisms are implemented in the AT45DB081E-UUN2B-T?
The AT45DB081E-UUN2B-T provides hardware-based security including individual sector protection, permanent sector lockdown (freezeable), and a 128-byte OTP Security Register (64-byte factory ID + 64-byte user space). Sector lockdown prevents any future writes to protected regions, even after power cycles. These features are fully documented in AT45DB081E-UUN2B-T datasheet Sections 8 and 9, with command tables in Tables 14–19.
What is the operating temperature range for the AT45DB081E-UUN2B-T?
The AT45DB081E-UUN2B-T is rated for the full industrial temperature range of –40°C to +85°C. This is explicitly stated in the "Features" section (Page 1) and verified in Section 19.2 ("DC and AC Operating Range") of the AT45DB081E-UUN2B-T datasheet, ensuring reliable operation in harsh environments like factory automation and outdoor telemetry.
AT45DB081E-UUN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 8Mbit
- Memory Organization:
- 256 Bytes x 4096 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 4ms
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-WLCSP (2.32x1.61)
AT45DB081E-UUN2B-T FAQ
1.How can I place an order for AT45DB081E-UUN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB081E-UUN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB081E-UUN2B-T reliable?
The price and inventory of AT45DB081E-UUN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB081E-UUN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB081E-UUN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB081E-UUN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB081E-UUN2B-T?
AT45DB081E-UUN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB081E-UUN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB081E-UUN2B-T?
For technical support, including AT45DB081E-UUN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB081E-UUN2B-T requirements.
6.How does Aetrix verify that AT45DB081E-UUN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB081E-UUN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB081E-UUN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB081E-UUN2B-T?
All AT45DB081E-UUN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB081E-UUN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB081E-UUN2B-T part is unused and in its original packaging.
Return procedure for AT45DB081E-UUN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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