Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas AT45DB081E-UUN-T

Part No.:
AT45DB081E-UUN-T
Manufacturer:
Renesas
Category:
Memory
Package:
8-UFBGA, WLCSP
Datasheet:
AetrixAT45DB081E-UUN-T.pdf
Description:
IC FLASH 8MBIT SPI 85MHZ 8WLCSP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,674

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AT45DB081E-UUN-T from Renesas Electronics is an 8-Mbit serial DataFlash memory with two 256/264-byte SRAM buffers, SPI interface (modes 0 and 3), 85 MHz max clock rate, and 6 ns clock-to-output time. It supports RapidS™ high-speed read, continuous array access, and flexible erase granularity (page/block/sector/chip) for embedded firmware storage and voice/data logging.

For engineers reviewing the AT45DB081E-UUN-T datasheet, AT45DB081E-UUN-T pinout, AT45DB081E-UUN-T application, or AT45DB081E-UUN-T equivalent, this page delivers verified electrical specs, buffer-optimized write interleaving capability, industrial temperature support (–40°C to +85°C), and RoHS-compliant 8-pad UDFN (5 × 6 × 0.6 mm) packaging details.

Technical Context

The AT45DB081E-UUN-T implements a dual-buffered sequential-access architecture: main memory (4,096 pages × 256/264 bytes) plus two independent SRAM buffers enabling concurrent receive-and-reprogram operation. Its SPI interface supports legacy and RapidS™ command sets with opcode differentiation (e.g., 0Bh/01h for high/low-power continuous reads).

Hardware sector protection, OTP security register (128 bytes), and program/erase suspend/resume functionality enable robust data integrity in field-upgradable systems. All erase and program cycles are self-timed without external voltage pumps.

Key Specifications

Parameter Value and Actual Design Meaning
Memory capacity 8,650,752 bits (8 Mbit) organized as 4,096 pages of 256 or 264 bytes - enables firmware image storage with byte-alterable E2PROM emulation via read-modify-write.
Interface & speed SPI-compatible (modes 0 and 3); up to 85 MHz clock rate - supports high-throughput streaming in microcontroller-based loggers and audio recorders.
Access timing 6 ns max clock-to-output (tV) - ensures deterministic low-latency read response critical for real-time control loops accessing configuration data.
Power consumption 400 nA ultra-deep power-down current (typical); 25 µA standby current - extends battery life in always-on sensor nodes and portable medical devices.
Erase granularity Page (256/264 B), block (2 kB), sector (64 kB), chip (8 Mbit) - allows selective firmware patching without full reflash, reducing update time and wear.
Data retention & endurance 20 years data retention; 100,000 program/erase cycles per page - meets long-life requirements for industrial controllers and automotive ECUs.
Operating voltage 1.7 V to 3.6 V single supply - interoperates directly with 1.8 V and 3.3 V logic domains without level-shifting circuitry.

Pinout & Package

AT45DB081E-UUN-T uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm) with exposed thermal pad (NC or GND). Pin functions align with standard SPI serial flash topology.

Pin/Terminal Circuit Role Design Meaning
CS Chip Select Active-low enable; high-to-low transition initiates command sequence; deassertion places SO in high-Z and enters standby mode (25 µA).
SCK Serial Clock Input clock synchronizing all SI/SO data transfers; supports up to 85 MHz for RapidS™ reads and 15 MHz for low-power reads.
SI Serial Input Command/address/data input path; latched on SCK rising edge in SPI mode 0, falling edge in mode 3.
SO Serial Output Data/command-status output; tri-stated when CS is high; 6 ns tV enables tight timing closure in high-speed systems.
WP Write Protect Hardware sector lock control; low = protection enabled per Sector Protection Register settings; supports permanent lockdown via OTP.
RESET Hardware Reset Active-low asynchronous reset; returns device to power-on state without requiring power cycle - critical for recovery in unattended systems.
VCC Supply Voltage 1.7–3.6 V single supply; powers core, I/O, and charge pump - eliminates need for auxiliary high-voltage programming supplies.
GND Ground Reference for all signals and internal circuitry; bottom thermal pad may be connected to PCB ground plane for thermal management.

Key Features

Feature Design Value
Dual SRAM buffers (256/264 bytes each) Enables simultaneous data reception into one buffer while reprogramming main memory from the other - eliminates write stalls in continuous data streams.
RapidS™ high-speed read mode Supports 85 MHz clock with opcodes 0Bh/1Bh - doubles throughput vs. legacy E8h command, accelerating boot code loading and firmware verification.
User-configurable page size Factory-set to 264 bytes (default) or 256 bytes - matches legacy DataFlash compatibility or optimizes density for aligned binary images.
Program/erase suspend/resume Allows interrupting long erase operations to service urgent reads - maintains system responsiveness during background updates.
128-byte OTP Security Register 64 bytes factory-programmed unique ID + 64 bytes user-programmable - enables secure device authentication and license binding in IoT endpoints.
Individual sector lockdown Per-sector write-protection that can be permanently frozen - prevents accidental or malicious overwrite of bootloader or calibration data.

Applications

Firmware Storage Voice/Data Logging

Use Scenario: Storing and updating boot code, application firmware, and configuration parameters in microcontroller-based edge nodes.

IC Role / Device Role / Timing Role: Nonvolatile program memory accessed via SPI during cold boot and OTA updates; supports rapid page reads for fast initialization.

Use Value: Dual-buffered writes allow background firmware patching without halting real-time tasks; 20-year retention ensures reliability over product lifetime.

Use Scenario: Capturing sensor telemetry or voice snippets in battery-powered environmental monitors or medical wearables.

IC Role / Device Role / Timing Role: Sequential-access data sink with low-power Deep Power-Down (400 nA) between sampling intervals.

Use Value: Continuous array read capability enables uninterrupted streaming; 100K-cycle endurance supports frequent overwrite in circular buffer implementations.

Industrial HMI Configuration Automotive Diagnostic Module

Use Scenario: Persisting UI layouts, language packs, and calibration tables in human-machine interface panels deployed in factory automation.

IC Role / Device Role / Timing Role: High-reliability parameter store with hardware WP pin and sector lockdown to prevent corruption during ESD events.

Use Value: Individual sector protection isolates critical display assets from user-modifiable content; industrial temp range (–40°C to +85°C) ensures operation in harsh enclosures.

Use Scenario: Storing diagnostic trouble codes (DTCs), vehicle-specific calibration maps, and event logs in OBD-II modules.

IC Role / Device Role / Timing Role: Secure, tamper-resistant memory with OTP ID for module authentication and encrypted firmware updates.

Use Value: 128-byte Security Register binds firmware to hardware identity; sector lockdown prevents unauthorized modification of safety-critical calibration data.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Winbond W25Q80DVSSIG 8 Mbit SPI NOR Flash; no SRAM buffers; 104 MHz max clock; no RapidS™ or page-size configurability. Lacks dual-buffer interleaving and continuous array read - less suitable for streaming write workloads. Choose for cost-sensitive designs where simple random-access reads dominate and buffer-assisted writes are unnecessary.
Microchip SST26VF064B-104I/MF 64 Mbit SuperFlash; 104 MHz; no dedicated SRAM buffers; supports QPI/DTR modes but no RapidS™. Higher density but lacks AT45DB081E-UUN-T's seamless read-modify-write and sector lockdown features. Prefer when larger code storage is required and advanced data protection (OTP, lockdown) is not mandatory.

Compared with W25Q80DVSSIG and SST26VF064B-104I/MF, the AT45DB081E-UUN-T uniquely delivers concurrent buffer operation, RapidS™ acceleration, and hardware-enforced sector lockdown - making it optimal for streaming, secure, and field-upgradable embedded systems where write efficiency and data integrity are prioritized over raw density or peak clock speed.

Availability

AT45DB081E-UUN-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, and industrial HMI configuration requiring stable component supply across extended product lifecycles.

Supply support for AT45DB081E-UUN-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT45DB081E-UUN-T belongs to Renesas' DataFlash® family, engineered specifically for high-reliability, low-pin-count serial data storage in resource-constrained embedded systems requiring seamless streaming, secure updates, and long-term data integrity.

FAQ

What is the default page size configuration for the AT45DB081E-UUN-T?

The AT45DB081E-UUN-T ships with a default page size of 264 bytes, optimized for standard DataFlash compatibility. It can be factory-configured for 256-byte pages to align with legacy binary image formats. Page size selection is fixed at manufacturing and cannot be changed in-system.

Does the AT45DB081E-UUN-T support true random access like parallel NOR Flash?

No. The AT45DB081E-UUN-T is a sequential-access device: data must be read or written in page-aligned or continuous-stream fashion. It does not support byte-level random addressing. Its architecture prioritizes low pin count and streaming efficiency over random access latency.

How does the dual-buffer architecture improve write performance in the AT45DB081E-UUN-T?

The AT45DB081E-UUN-T's two independent 256/264-byte SRAM buffers allow one buffer to accept incoming data via SPI while the other simultaneously programs a page into main memory. This interleaving eliminates write stalls, enabling sustained throughput in continuous logging or firmware streaming applications.

What is the purpose of the RapidS™ feature in the AT45DB081E-UUN-T?

RapidS™ is a proprietary high-speed read mode in the AT45DB081E-UUN-T that achieves up to 85 MHz operation using dedicated opcodes (0Bh, 1Bh). It reduces instruction overhead and improves timing margins versus legacy commands (E8h), accelerating boot code fetch and firmware validation in time-critical systems.

Can the AT45DB081E-UUN-T's OTP Security Register be reprogrammed after initial write?

No. The 128-byte OTP Security Register in the AT45DB081E-UUN-T contains 64 bytes of factory-programmed unique identifier and 64 bytes user-programmable space. Once written, the user portion is permanently locked and cannot be altered - ensuring cryptographic binding and anti-cloning security.

AT45DB081E-UUN-T Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-UFBGA, WLCSP
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH
Memory Size:
8Mbit
Memory Organization:
264 Bytes x 4096 pages
Memory Interface:
SPI
Clock Frequency:
85 MHz
Write Cycle Time - Word, Page:
8µs, 4ms
Access Time:
-
Voltage - Supply:
1.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WLCSP (2.32x1.61)

AT45DB081E-UUN-T FAQ

1.How can I place an order for AT45DB081E-UUN-T through Aetrix?

Please submit a Request for Quotation (RFQ) for AT45DB081E-UUN-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AT45DB081E-UUN-T reliable?

The price and inventory of AT45DB081E-UUN-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB081E-UUN-T is usually 5 days.

3.What payment methods are accepted for AT45DB081E-UUN-T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB081E-UUN-T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AT45DB081E-UUN-T?

AT45DB081E-UUN-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AT45DB081E-UUN-T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AT45DB081E-UUN-T?

For technical support, including AT45DB081E-UUN-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB081E-UUN-T requirements.

6.How does Aetrix verify that AT45DB081E-UUN-T is sourced from the original manufacturer or authorized distributors?

All AT45DB081E-UUN-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB081E-UUN-T meets industry standards.

7.What is the process for return or replacement of AT45DB081E-UUN-T?

All AT45DB081E-UUN-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB081E-UUN-T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AT45DB081E-UUN-T part is unused and in its original packaging.

Return procedure for AT45DB081E-UUN-T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AT45DB081E-UUN-T Tags

  • AT45DB081E-UUN-T
  • AT45DB081E-UUN-T PDF
  • AT45DB081E-UUN-T Datasheet
  • AT45DB081E-UUN-T Specifications
  • AT45DB081E-UUN-T Images
  • Renesas
  • Renesas AT45DB081E-UUN-T
  • Buy AT45DB081E-UUN-T
  • AT45DB081E-UUN-T Price
  • AT45DB081E-UUN-T Distributor
  • AT45DB081E-UUN-T Supplier
  • AT45DB081E-UUN-T Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER