Renesas AT45DB161E-CCUD-T

Overview

AT45DB161E-CCUD-T from Renesas Electronics is a 16-Mbit serial DataFlash memory with 512/528-byte page architecture, SPI-compatible interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and dual 512/528-byte SRAM buffers enabling concurrent read/write operations. It operates from a single 2.3–3.6 V supply and supports industrial temperature range (–40°C to +85°C), targeting embedded firmware storage and real-time data logging in space-constrained systems.

For engineers reviewing the AT45DB161E-CCUD-T datasheet, AT45DB161E-CCUD-T pinout, AT45DB161E-CCUD-T application, or AT45DB161E-CCUD-T equivalent, key selection criteria include page size configurability (512 vs. 528 bytes), ultra-low deep power-down current (400 nA typical), hardware/software sector protection, OTP security register, and continuous array read capability across full memory - all critical for secure, low-power, high-reliability firmware and parameter storage.

Technical Context

The AT45DB161E-CCUD-T implements a sequential-access Flash architecture with two independent SRAM buffers, enabling true interleaved programming: while one buffer receives new data via SPI, the other transfers content to main memory without halting host communication. Its RapidS™ mode uses optimized command sequences (e.g., 0Bh/1Bh opcodes) to achieve 85 MHz clock rates and 6 ns clock-to-output timing.

Memory organization is fixed at 4,096 pages × 512/528 bytes (16 Mbits + 512 kbits extra), with flexible erase granularity - page (512/528 B), block (4 kB), sector (128 kB), or chip-wide - and full suspend/resume support for program/erase operations. Sector lockdown and 128-byte OTP security register provide tamper-resistant configuration and identity storage.

Key Specifications

Pinout & Package

AT45DB161E-CCUD-T is packaged in an 8-pad Ultra-thin DFN (5 mm × 6 mm × 0.6 mm) with exposed pad (non-connected or optional GND tie). Pin functions are defined per JEDEC-compliant SPI interface with dedicated Chip Select, Serial Clock, Serial Input, Serial Output, and Write Protect.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial Flash memory applications.

Compared with W25Q16JW and MX25L1633F, the AT45DB161E-CCUD-T uniquely delivers dual-buffer interleaving, 400 nA ultra-deep power-down, and factory-programmable OTP identity - making it optimal for secure, low-power, streaming-data embedded systems where firmware update reliability and device uniqueness are mandatory.

Availability

AT45DB161E-CCUD-T is available at Aetrix Electronics and suitable for firmware storage, secure boot configuration, and battery-powered data logging requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant green packaging.

Supply support for AT45DB161E-CCUD-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.

The AT45DB161E belongs to Renesas' DataFlash family, designed specifically for high-reliability, low-pin-count, low-voltage serial Flash applications requiring concurrent read/write, configurable page sizes, and integrated security features - targeting embedded systems where space, power, and data integrity are critical.

FAQ

What is the page size configuration of the AT45DB161E-CCUD-T?

The AT45DB161E-CCUD-T supports user-configurable page sizes of either 512 bytes or 528 bytes. The default is 528 bytes, but it can be factory pre-configured for 512-byte pages. This setting affects addressing, command sequences, and memory layout - confirmed in the Buffer and Page Size Configuration section (Section 12) of the AT45DB161E-CCUD-T datasheet.

Does the AT45DB161E-CCUD-T support true concurrent read and write operations?

Yes, the AT45DB161E-CCUD-T supports true concurrency via two independent 512/528-byte SRAM buffers. While one buffer accepts incoming data via SPI, the other can simultaneously transfer its contents to main memory - enabling uninterrupted data streaming without host CPU intervention or latency stalls.

What power-saving modes does the AT45DB161E-CCUD-T offer?

The AT45DB161E-CCUD-T offers three low-power states: standby (25 µA typical), deep power-down (5 µA typical), and ultra-deep power-down (400 nA typical). Entry into ultra-deep power-down requires a specific command sequence and resets internal state upon wake - critical for ultra-long battery life in intermittent-sensing applications.

How is security implemented in the AT45DB161E-CCUD-T?

Security in the AT45DB161E-CCUD-T includes a 128-byte One-Time Programmable (OTP) Security Register (64 bytes factory UID + 64 bytes user programmable), individual sector protection, and permanent sector lockdown. These features are accessed via dedicated SPI commands (e.g., 32h, 35h, 77h) and require WP pin control or software enablement.

What package type is used for the AT45DB161E-CCUD-T?

The AT45DB161E-CCUD-T uses an 8-pad Ultra-thin DFN package measuring 5 mm × 6 mm × 0.6 mm (ordering code CCUD). The bottom thermal pad is not internally connected but may be tied to GND on the PCB for thermal and EMI performance - detailed in Packaging Information Section 29.3 of the AT45DB161E-CCUD-T datasheet.