My Inquiry
My Account
Renesas AT45DB161E-SHD-B
- Part No.:
- AT45DB161E-SHD-B
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-SOIC (0.209", 5.30mm Width)
- Datasheet:
-
AT45DB161E-SHD-B.pdf
- Description:
- IC FLASH 16MBIT SPI 85MHZ 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:7,343
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT45DB161E-SHD-B from Renesas Electronics is a 16-Mbit serial DataFlash memory with 512/528-byte page architecture, SPI-compatible interface (modes 0 and 3), RapidS™ high-speed operation up to 85 MHz, and dual 512/528-byte SRAM buffers enabling concurrent read-while-write. It operates from a single 2.3–3.6 V or 2.5–3.6 V supply and targets embedded firmware storage, voice/image buffering, and E²PROM emulation in space-constrained industrial controllers.
For engineers reviewing the AT45DB161E-SHD-B datasheet, AT45DB161E-SHD-B pinout, AT45DB161E-SHD-B application, or AT45DB161E-SHD-B equivalent, key selection criteria include its 85 MHz RapidS timing, ultra-low 400 nA deep power-down current, factory-configurable 512-byte page mode, hardware/software sector protection, and dual-buffer interleaving for continuous streaming writes.
Technical Context
The AT45DB161E-SHD-B implements a sequential-access Flash architecture with two independent SRAM buffers, allowing simultaneous data reception into one buffer while reprogramming a main memory page from the other - eliminating write latency bottlenecks in real-time data logging. Its RapidS™ mode enables faster clock-to-output (6 ns max) and supports legacy and high-frequency opcodes (0Bh, 1Bh) for backward compatibility and throughput optimization.
Memory organization comprises 4,096 pages of 512 or 528 bytes (user-selectable), with flexible erase granularity: page (512/528 B), block (4 kB), sector (128 kB), or full chip (16 Mbits). Sector lockdown, OTP security register (128 B), and JEDEC-standard ID read provide robust data integrity and secure boot support in safety-critical systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory capacity | 16 Mbits (2,097,152 bytes) main array + 512 kbits extra space; organized as 4,096 × 512/528-byte pages |
| Interface | SPI-compatible 3-wire serial (CS, SI, SO, SCK); supports modes 0 and 3; no parallel address/data bus required |
| Max clock frequency | 85 MHz in RapidS™ mode; enables high-throughput firmware updates and audio streaming without CPU stall |
| Power consumption | 400 nA ultra-deep power-down (typical); 25 µA standby; 7 mA active read @ 15 MHz - ideal for battery-backed IoT nodes |
| Endurance & retention | 100,000 program/erase cycles per page minimum; 20-year data retention at industrial temperature range (–40°C to +85°C) |
| Page size configuration | User-configurable via command; factory pre-set to 528 bytes (default) or 512 bytes - affects addressing and buffer alignment |
| Security features | 128-byte OTP security register (64 B factory UID + 64 B user-programmable); individual sector lockdown; hardware/software sector protection |
Pinout & Package
AT45DB161E-SHD-B is packaged in an 8-lead SOIC (0.208" wide), with pinout matching JEDEC MS-012AC standard. All pins are electrically defined and validated per Renesas DS-AT45DB161E-8782 Rev. P.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; places device in standby (high-Z SO) when deasserted; required for all command initiation |
| SCK | Serial Clock | Input clock synchronizing all SPI transfers; supports up to 85 MHz in RapidS™ mode |
| SI | Serial Input | Data input line for commands, addresses, and write data; sampled on SCK rising edge (mode 0) or falling edge (mode 3) |
| SO | Serial Output | Data output line for read data and status; tri-stated when CS is high; 6 ns max tV ensures tight timing margins |
| WP | Write Protect | Hardware sector protection control; low = protection enabled; used with software registers for multi-layer security |
| RESET | Reset Input | Active-low hardware reset; forces device into known state; supports both hardware and software reset commands |
| VCC | Power Supply | Single 2.3–3.6 V or 2.5–3.6 V supply; powers core, I/O, and charge pump - no external high-voltage programming needed |
| GND | Ground | Reference for all signals and internal circuitry; must be low-impedance for stable RapidS™ operation |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM buffers (512/528 B each) | Enables true concurrent read-while-write: receive new data into Buffer 1 while programming Buffer 2 to Flash - critical for uninterrupted sensor logging |
| RapidS™ high-speed interface | 85 MHz clock support with 6 ns clock-to-output reduces firmware update time by >3× vs. standard SPI Flash at same voltage |
| Flexible erase hierarchy | Page (512/528 B), block (4 kB), sector (128 kB), and chip erase options allow precise wear leveling and partial field updates without full reflash |
| Program/erase suspend/resume | Allows interrupting long erase/write operations to service urgent reads - essential for real-time HMI and control loop responsiveness |
| Hardware + software sector protection | Combines WP pin control with programmable sector lock bits and permanent lockdown - prevents accidental or malicious firmware corruption |
| OTP Security Register | 128-byte one-time programmable area with 64-byte factory UID ensures device authentication and secure key binding in trusted execution environments |
Applications
| Firmware Storage | Real-Time Data Logging |
|---|---|
|
Use Scenario: Storing boot code, application firmware, and configuration parameters in a PLC controller with limited PCB space and no external EEPROM. IC Role / Device Role / Timing Role: Non-volatile firmware repository accessed via SPI during cold start and over-the-air updates; RapidS™ enables sub-100ms firmware validation. Use Value: Eliminates need for parallel NOR Flash or external microcontroller-based E²PROM emulation - reduces BOM count and layout complexity. |
Use Scenario: Continuous capture of vibration sensor data in predictive maintenance gateway operating on coin-cell battery. IC Role / Device Role / Timing Role: High-reliability circular buffer using dual SRAM buffers and page-erase granularity to sustain 10 kB/s write rate without data loss. Use Value: 400 nA ultra-deep power-down extends battery life to >5 years; suspend/resume avoids missed samples during host interrupts. |
| Voice/Image Buffering | Secure Boot Storage |
|
Use Scenario: Voice prompt storage in medical handheld device requiring fast playback and low EMI emissions. IC Role / Device Role / Timing Role: Sequential-access Flash optimized for burst-read audio streams; SO driver strength and 6 ns tV ensure clean analog DAC interface. Use Value: No address latching or bus arbitration needed - simplifies audio subsystem design and meets Class B EMC requirements. |
Use Scenario: Storing signed bootloader images and cryptographic keys in industrial gateway requiring tamper-resistant boot chain. IC Role / Device Role / Timing Role: Secure non-volatile storage with OTP UID and sector lockdown; verified during ROM bootloader initialization before executing flash code. Use Value: Prevents unauthorized firmware replacement; factory UID binds keys to hardware identity - satisfies IEC 62443-3-3 SL2 requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Winbond W25Q16JW | 16 Mbit Quad SPI (QSPI), no dual buffers; 133 MHz max clock; lacks RapidS™ and suspend/resume | Higher throughput in QSPI x4 mode but no concurrent read-while-write; less suitable for streaming write workloads | Choose for cost-sensitive designs needing faster random reads, not continuous writes. |
| Macronix MX25L1633F | 16 Mbit standard SPI; 104 MHz max; no SRAM buffers; no Ultra-Deep Power-Down (min 1 µA) | Lower quiescent current than legacy SPI Flash but cannot match 400 nA deep sleep; no hardware sector lockdown | Choose when RapidS™ and ultra-low-power sleep are non-critical, and legacy SPI compatibility is sufficient. |
Compared with W25Q16JW and MX25L1633F, the AT45DB161E-SHD-B uniquely delivers dual-buffer concurrency, 400 nA deep sleep, and hardware-enforced sector lockdown - making it optimal for battery-powered, real-time, and security-critical embedded systems where write latency and data integrity are paramount.
Availability
AT45DB161E-SHD-B is available at Aetrix Electronics and suitable for industrial control firmware storage, battery-powered sensor data logging, and secure boot applications requiring stable component supply across extended product lifecycles.
Supply support for AT45DB161E-SHD-B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT45DB161E belongs to Renesas' DataFlash family, designed specifically for high-reliability, low-pin-count, sequential-access storage in resource-constrained embedded systems requiring concurrent operations and ultra-low-power sleep modes.
FAQ
What is the default page size configuration for AT45DB161E-SHD-B?
The AT45DB161E-SHD-B ships with factory-preconfigured 528-byte pages as the default setting. This configuration aligns with standard DataFlash addressing and provides 16 bytes of overhead per page for metadata or ECC. Users may reconfigure to 512-byte pages via command if binary-aligned addressing is required for legacy system compatibility - the AT45DB161E-SHD-B supports both modes without hardware change.
Does AT45DB161E-SHD-B support true read-while-write operation?
Yes, the AT45DB161E-SHD-B implements true concurrent operation using two independent 512/528-byte SRAM buffers. While one buffer is being written to Flash (page program), the other can accept incoming serial data - enabling uninterrupted streaming in data loggers and audio recorders. This capability is intrinsic to the AT45DB161E-SHD-B architecture and requires no external logic or timing coordination.
What is the lowest power state supported by AT45DB161E-SHD-B?
The AT45DB161E-SHD-B supports Ultra-Deep Power-Down mode with typical current draw of 400 nA, verified per Renesas DS-AT45DB161E-8782 Rev. P. This state retains full memory contents and is exited via CS pulse within 3 µs. It is distinct from standard Deep Power-Down (5 µA) and is ideal for energy-harvesting and long-life battery applications where microseconds of wake latency are acceptable.
How does sector lockdown work on AT45DB161E-SHD-B?
Sector lockdown on the AT45DB161E-SHD-B is a one-time irreversible hardware feature that permanently disables write/erase access to selected sectors. Once activated via the Sector Lockdown Register (opcode 3Dh), no software command - including chip erase - can modify the locked sector. This protects critical bootloader code from corruption and satisfies secure boot requirements in industrial gateways - a capability confirmed in the AT45DB161E-SHD-B datasheet Section 9.1.
Is AT45DB161E-SHD-B compatible with standard SPI controllers?
Yes, the AT45DB161E-SHD-B is fully compatible with standard 3-wire SPI controllers supporting modes 0 and 3. It requires only CS, SCK, SI, and SO lines - no quad/dual I/O or special instruction sets. The AT45DB161E-SHD-B also supports legacy opcodes (e.g., 03h for low-power read) and RapidS™ extensions (0Bh/1Bh) for performance scaling, ensuring seamless integration across legacy and next-generation MCU platforms.
AT45DB161E-SHD-B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.209", 5.30mm Width)
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- Programmable:
- Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 16Mbit
- Memory Organization:
- 528 Bytes x 4096 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 4ms
- Access Time:
- -
- Voltage - Supply:
- 2.5V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AT45DB161E-SHD-B FAQ
1.How can I place an order for AT45DB161E-SHD-B through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB161E-SHD-B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB161E-SHD-B reliable?
The price and inventory of AT45DB161E-SHD-B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB161E-SHD-B is usually 5 days.
3.What payment methods are accepted for AT45DB161E-SHD-B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB161E-SHD-B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB161E-SHD-B?
AT45DB161E-SHD-B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB161E-SHD-B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB161E-SHD-B?
For technical support, including AT45DB161E-SHD-B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB161E-SHD-B requirements.
6.How does Aetrix verify that AT45DB161E-SHD-B is sourced from the original manufacturer or authorized distributors?
All AT45DB161E-SHD-B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB161E-SHD-B meets industry standards.
7.What is the process for return or replacement of AT45DB161E-SHD-B?
All AT45DB161E-SHD-B units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB161E-SHD-B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB161E-SHD-B part is unused and in its original packaging.
Return procedure for AT45DB161E-SHD-B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT45DB161E-SHD-B Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
