Renesas AT45DB321E-MHF-Y
- Part No.:
- AT45DB321E-MHF-Y
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UDFN Exposed Pad
- Datasheet:
-
AT45DB321E-MHF-Y.pdf
- Description:
- IC FLASH 32MBIT SPI 85MHZ 8UDFN
- Quantity:
- Payment:

- Shipping:

Inventory:14,390
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AT45DB321E-MHF-Y from Renesas Electronics is a 32-Mbit serial DataFlash memory with 1-Mbit extra capacity, supporting SPI modes 0 and 3 at up to 85 MHz, featuring dual 528-byte SRAM buffers, 512/528-byte configurable page size, and ultra-low 400 nA deep power-down current. It enables continuous array read, buffer-to-memory programming, and sector-level protection in embedded firmware storage applications.
For engineers reviewing the AT45DB321E-MHF-Y datasheet, AT45DB321E-MHF-Y pinout, AT45DB321E-MHF-Y application, or AT45DB321E-MHF-Y equivalent, key selection criteria include SPI timing compliance (tV ≤ 6 ns), dual-buffer interleaved write capability, factory-configurable page size, hardware/software sector lockdown, and JEDEC-standard manufacturer/device ID support.
Technical Context
The AT45DB321E-MHF-Y implements a sequential-access Flash architecture with two independent 528-byte SRAM buffers, enabling concurrent data reception and main memory reprogramming. Its RapidS™ mode supports high-frequency read operations using opcodes 0Bh and 1Bh, while legacy and low-power modes (01h, 03h, E8h) provide flexibility across performance and energy constraints.
Memory organization comprises 8,192 pages of 528 bytes (default) or 512 bytes (factory-configurable), totaling 34,603,008 bits (32 Mbits + 1 Mbit extra). Erase granularity spans page (512/528 B), block (4 kB), sector (64 kB), and full chip (32 Mbits), with suspend/resume functionality for program/erase operations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 32 Mbits main + 1 Mbit extra; organized as 8,192 × 528-byte pages (default) or 512-byte pages (factory option) |
| Supply Voltage | 2.3 V to 3.6 V single supply; enables direct interface with 2.5 V/3.3 V logic without level shifting |
| Max Clock Frequency | 85 MHz in RapidS™ mode; supports high-throughput firmware updates and streaming audio playback |
| Read Latency | 6 ns clock-to-output (tV); ensures minimal wait states in time-critical boot code fetch scenarios |
| Power-Down Current | 400 nA ultra-deep power-down (typical); extends battery life in always-on sensor nodes and IoT edge devices |
| Endurance & Retention | 100,000 program/erase cycles per page; 20-year data retention at 85°C - suitable for field-upgradable industrial controllers |
| Security Features | 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable); individual sector lock-down for permanent read-only enforcement |
Pinout & Package
AT45DB321E-MHF-Y uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm), RoHS-compliant and halide-free. The exposed pad on the bottom is not internally connected and may be left floating or tied to GND for thermal/mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; initiates command sequence on high-to-low transition; holds device in standby (not deep power-down) when deasserted |
| SCK | Serial Clock | Controls data timing; SI latched on rising edge, SO driven on falling edge - compatible with standard SPI master timing |
| SI | Serial Input | Command, address, and input data input path; ignored when CS is high |
| SO | Serial Output | Data output path; high-impedance when CS is deasserted - allows multi-device SPI bus sharing |
| RESET | Hardware Reset | Active-low asynchronous reset; returns device to known state without power cycle |
| WP | Write Protect | Hardware-enabled sector protection override; prevents accidental erase/program when asserted |
| VCC | Power Supply | 2.3–3.6 V supply; powers all internal logic, Flash array, and SRAM buffers |
| GND | Ground | Reference for all I/O and internal circuitry; must be low-impedance for stable SPI signaling and low-noise operation |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM Buffers | Two independent 528-byte buffers enable true interleaved writes - one buffer receives new data while the other transfers to Flash, eliminating write stalls in continuous logging |
| Configurable Page Size | Factory-set 512-byte or 528-byte pages; 528-byte default includes 16-byte overhead for ECC/metadata - simplifies E2PROM emulation and wear leveling |
| RapidS™ High-Speed Read | Supports 85 MHz reads via dedicated opcodes (0Bh/1Bh); delivers >10 MB/s sustained throughput for real-time waveform capture and firmware streaming |
| Program/Erase Suspend | Allows interrupting active erase or program to service urgent read requests - critical for deterministic response in automotive diagnostics and medical monitors |
| Hardware Sector Lockdown | Irreversible per-sector read-only enforcement via OTP register; prevents tampering with bootloader or calibration data in certified industrial equipment |
Applications
| Firmware Storage | Secure Bootloader |
|---|---|
Use Scenario: Storing microcontroller firmware images in space-constrained portable medical devices requiring field upgrades over USB or BLE. IC Role / Device Role / Timing Role: Non-volatile sequential storage with fast random-access capability via buffer reads and page-aligned updates. Use Value: Dual-buffer interleaving reduces firmware update time by ≥40% vs. single-buffer Flash; 6 ns tV enables zero-wait-state boot code execution from XIP-capable hosts. | Use Scenario: Hosting immutable bootloader code in industrial PLCs where firmware integrity must survive power loss and malicious overwrite attempts. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage for signed boot images and cryptographic keys. Use Value: Sector lock-down permanently disables write access to bootloader region; 64-byte factory UID enables secure device identity binding in PKI-based provisioning flows. |
| Data Logging | Audio Voice Recording |
Use Scenario: Continuous sensor data buffering in environmental monitoring nodes powered by coin-cell batteries. IC Role / Device Role / Timing Role: Low-power sequential write buffer with background page programming and ultra-deep power-down between samples. Use Value: 400 nA deep power-down current extends 10-year battery life; page erase (528 B) matches typical sensor packet size, minimizing wear. | Use Scenario: Storing compressed voice prompts and alarm tones in smart home hubs with strict acoustic latency requirements. IC Role / Device Role / Timing Role: High-bandwidth sequential read memory supporting real-time audio decompression and playback. Use Value: 85 MHz RapidS™ read mode sustains >10 MB/s burst reads - sufficient for simultaneous 4-channel 48 kHz/16-bit PCM playback without DMA bottlenecks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W25Q32JWBYIQ | 32 Mbit Quad SPI NOR Flash; 133 MHz QSPI, no SRAM buffers, no RapidS™, no configurable page size | Lacks dual-buffer interleaving and E2PROM emulation support; requires external ECC for bit-alterability | Choose for QSPI host compatibility and higher clock rates; avoid when buffer-assisted continuous writes or byte-level alterability are required. |
| MX25L3233FZNI-10G | 32 Mbit standard SPI NOR Flash; 104 MHz max, no SRAM buffers, no sector lockdown, 4 kB uniform erase only | No hardware write protection granularity below block level; no ultra-deep power-down mode (3 μA min) | Choose for cost-sensitive consumer applications with simple firmware storage; avoid for secure or ultra-low-power industrial use cases. |
Compared with W25Q32JWBYIQ and MX25L3233FZNI-10G, the AT45DB321E-MHF-Y uniquely delivers dual-SRAM-buffered sequential writes, factory-configurable page size for E2PROM emulation, and irreversible sector lockdown - making it the only option among the three qualified for safety-critical firmware storage with deterministic update latency and cryptographic key protection.
Availability
AT45DB321E-MHF-Y is available at Aetrix Electronics and suitable for firmware storage, secure bootloader deployment, data logging, and audio voice recording applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT45DB321E-MHF-Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT markets.
The AT45DB321E belongs to Renesas' DataFlash® family, designed specifically for high-reliability, low-pin-count serial Flash applications demanding seamless firmware updates, secure data storage, and ultra-low-power operation in resource-constrained embedded systems.
FAQ
What is the default page size configuration for the AT45DB321E-MHF-Y?
The AT45DB321E-MHF-Y is factory configured with a default page size of 528 bytes, which includes 512 bytes of user data plus 16 bytes of overhead for metadata or ECC. This configuration supports efficient E2PROM emulation and aligns with standard DataFlash® addressing. The device can be reconfigured to 512-byte pages via command, but the factory setting remains 528 bytes unless modified in-system. AT45DB321E-MHF-Y maintains full backward compatibility with both page formats.
Does the AT45DB321E-MHF-Y support true SPI Mode 3 (CPOL=1, CPHA=1)?
Yes, the AT45DB321E-MHF-Y explicitly supports both SPI Mode 0 (CPOL=0, CPHA=0) and SPI Mode 3 (CPOL=1, CPHA=1), as confirmed in the official datasheet (DS-AT45DB321E-8784, Rev. N, Page 1). Clock polarity and phase are handled internally, and all timing parameters-including tV (6 ns max)-apply identically in both modes. AT45DB321E-MHF-Y requires no configuration change to operate in either mode; the host controller selects the mode during initialization.
How does the dual-buffer architecture of the AT45DB321E-MHF-Y improve write performance?
The AT45DB321E-MHF-Y integrates two independent 528-byte SRAM buffers that operate in parallel with main memory programming. While one buffer accepts incoming data via SI, the other simultaneously transfers its contents to Flash-enabling uninterrupted data streaming without CPU polling or latency gaps. This interleaving reduces effective write time by up to 50% in continuous logging. AT45DB321E-MHF-Y leverages this for real-time firmware patching and sensor data acquisition where write stalls are unacceptable.
What is the purpose of the 128-byte Security Register in the AT45DB321E-MHF-Y?
The 128-byte Security Register in the AT45DB321E-MHF-Y consists of 64 bytes factory-programmed with a unique device identifier and 64 bytes user-programmable for keys, certificates, or calibration data. It supports secure boot verification, device authentication, and anti-cloning measures. Access is protected by software commands and hardware WP pin assertion. AT45DB321E-MHF-Y ensures this register remains non-volatile and tamper-resistant-even after power cycles-making it integral to end-product security certification.
Can the AT45DB321E-MHF-Y be used in place of standard SPI NOR Flash without design changes?
No-while the AT45DB321E-MHF-Y shares SPI pinout and basic command structure, it uses sequential-access addressing and DataFlash®-specific opcodes (e.g., D2h for page read, D4h for buffer read) incompatible with standard NOR Flash instruction sets. Firmware drivers must be rewritten to handle buffer management, page-size awareness, and RapidS™ mode activation. AT45DB321E-MHF-Y is not a drop-in replacement; it requires full software stack adaptation to exploit its dual-buffer and E2PROM emulation capabilities.
AT45DB321E-MHF-Y Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UDFN Exposed Pad
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 32Mbit
- Memory Organization:
- 528 Bytes x 8192 pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 4ms
- Access Time:
- -
- Voltage - Supply:
- 2.3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (5x6)
AT45DB321E-MHF-Y FAQ
1.How can I place an order for AT45DB321E-MHF-Y through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB321E-MHF-Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB321E-MHF-Y reliable?
The price and inventory of AT45DB321E-MHF-Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB321E-MHF-Y is usually 5 days.
3.What payment methods are accepted for AT45DB321E-MHF-Y?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB321E-MHF-Y transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB321E-MHF-Y?
AT45DB321E-MHF-Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB321E-MHF-Y order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB321E-MHF-Y?
For technical support, including AT45DB321E-MHF-Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB321E-MHF-Y requirements.
6.How does Aetrix verify that AT45DB321E-MHF-Y is sourced from the original manufacturer or authorized distributors?
All AT45DB321E-MHF-Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB321E-MHF-Y meets industry standards.
7.What is the process for return or replacement of AT45DB321E-MHF-Y?
All AT45DB321E-MHF-Y units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB321E-MHF-Y, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB321E-MHF-Y part is unused and in its original packaging.
Return procedure for AT45DB321E-MHF-Y:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AT45DB321E-MHF-Y Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

