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Renesas AT45DB641E-MHN2B-T
- Part No.:
- AT45DB641E-MHN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-UDFN Exposed Pad
- Datasheet:
-
AT45DB641E-MHN2B-T.pdf
- Description:
- IC FLASH 64MBIT SPI 85MHZ 8UDFN
- Quantity:
- Payment:
- Shipping:
Inventory:8,343
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Product details
Overview
AT45DB641E-MHN2B-T from Renesas Electronics is a 64-Mbit serial DataFlash memory with 2-Mbit extra capacity, supporting SPI modes 0 and 3 at up to 85 MHz, featuring dual 256/264-byte SRAM buffers, 1.7 V–3.6 V single-supply operation, and RapidS™ high-speed interface - deployed in embedded firmware storage and voice/data logging systems.
For engineers reviewing the AT45DB641E-MHN2B-T datasheet, AT45DB641E-MHN2B-T pinout, AT45DB641E-MHN2B-T application, or AT45DB641E-MHN2B-T equivalent, key selection criteria include page size configurability (256 vs. 264 bytes), ultra-deep power-down current (400 nA typ.), sector lockdown security, continuous array read capability, and hardware/software write protection support.
Technical Context
The AT45DB641E-MHN2B-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling concurrent buffer-to-memory programming and main memory reads. Its command set supports byte/page program, block/sector/chip erase, and suspend/resume operations - all self-timed without external high-voltage programming.
It integrates JEDEC-standard Manufacturer and Device ID read, status register monitoring, and configurable protection via dedicated WP pin and software-controlled sector lockdown. Page size (256 or 264 bytes) is factory pre-configured and cannot be changed in-circuit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 64 Mbit main + 2 Mbit extra = 69,206,016 bits; organized as 32,768 pages × 256 or 264 bytes |
| Supply Voltage | 1.7 V to 3.6 V single supply - enables direct interfacing with 1.8 V and 3.3 V microcontrollers without level shifters |
| Max Clock Frequency | 85 MHz - supports high-throughput firmware updates and real-time data streaming |
| Power-Down Current | 400 nA typical ultra-deep power-down - critical for battery-powered IoT edge nodes |
| Endurance & Retention | 100,000 program/erase cycles per page; 20-year data retention - suitable for field-upgradable industrial controllers |
| Page Size Config | Factory-set to 264 bytes (default); 256-byte option available - determines address alignment and buffer usage efficiency |
| Security Features | 128-byte OTP security register (64-byte factory UID + 64-byte user-programmable); sector lockdown makes regions permanently read-only |
Pinout & Package
AT45DB641E-MHN2B-T uses an 8-pad Ultra-thin DFN package (5 mm × 6 mm × 0.6 mm), RoHS-compliant and halide-free. The exposed metal pad on the bottom is unconnected and may be left floating or tied to GND for thermal/mechanical stability - no electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; initiates command sequence on falling edge and terminates on rising edge - required before any SPI transaction |
| SCK | Serial Clock | Input clock; latches SI data on rising edge, clocks SO data on falling edge - defines timing for all SPI transfers |
| SI | Serial Input | Command/address/data input line; ignored when CS is high - supports standard SPI command opcodes (e.g., 0Bh, D2h) |
| SO | Serial Output | Data output line; tri-stated when CS is high - delivers read data, status register contents, or security register values |
| WP | Write Protect | Hardware-level sector protection enable; low = protection active, high = protection disabled - complements software sector lock |
| RESET | Hardware Reset | Active-low asynchronous reset; forces device into known state and clears internal status flags - used for recovery after bus errors |
| VCC | Power Supply | 1.7–3.6 V core supply; powers logic, memory array, and I/O buffers - decoupling capacitor required near pin |
| GND | Ground | Reference return path for VCC and all I/O signals - must be low-impedance and directly connected to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM Buffers | Two independent 256/264-byte buffers allow simultaneous receive-to-buffer and buffer-to-memory programming - eliminates write latency in continuous data streams |
| RapidS™ Interface | High-frequency SPI mode (0Bh/1Bh opcodes) enables 85 MHz operation - doubles throughput vs. legacy E8h read commands |
| Flexible Erase Granularity | Page (256/264 B), Block (2 KB), Sector (256 KB), and Chip (64 Mbit) erase options - optimizes wear leveling and firmware partitioning |
| Program/Erase Suspend | Allows interrupting long erase cycles to service urgent read requests - maintains system responsiveness during background reprogramming |
| OTP Security Register | 128-byte one-time programmable area with 64-byte factory UID - enables secure device authentication and anti-cloning in medical or automotive systems |
Applications
| Firmware Storage | Voice/Data Logging |
|---|---|
Use Scenario: Storing boot code, application firmware, and configuration parameters in a resource-constrained MCU-based controller. IC Role / Device Role / Timing Role: Non-volatile program memory accessed via SPI during cold boot and OTA updates. Use Value: 264-byte page alignment matches typical bootloader sector boundaries; 100K endurance ensures >10 years of field upgrades. | Use Scenario: Capturing sensor telemetry or voice snippets in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Sequential write buffer with low-power deep-sleep mode between samples. Use Value: 400 nA ultra-deep power-down current extends coin-cell life to >5 years; dual buffers prevent data loss during flash reprogramming. |
| Industrial HMI | Medical Diagnostic Device |
Use Scenario: Storing localized UI assets (icons, fonts, language strings) in panel-mounted HMIs with limited PCB space. IC Role / Device Role / Timing Role: High-density serial storage replacing parallel NOR Flash to reduce pin count and layout complexity. Use Value: 8-pin DFN footprint (5×6 mm) saves >60% board area vs. SOIC; RapidS™ enables fast GUI asset loading at 85 MHz. | Use Scenario: Securely storing calibration coefficients and patient history logs in portable ultrasound units. IC Role / Device Role / Timing Role: Tamper-resistant data vault with sector lockdown and OTP UID for regulatory traceability. Use Value: Factory-programmed 64-byte UID satisfies FDA UDI requirements; sector lockdown prevents unauthorized modification of calibration data. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB642D-MHN2B-T | Successor generation with identical pinout, 64-Mbit capacity, but enhanced 100K-cycle endurance and extended -40°C to +105°C temp range | Preferred for new designs requiring extended temperature compliance and longer lifetime in harsh environments | Select if operating beyond industrial grade (-40°C to +85°C) or needing higher reliability margin |
| W25Q64JWSSIQ | 64-Mbit Quad SPI Flash with QSPI interface, 133 MHz max clock, no built-in SRAM buffers or RapidS™ mode | Lacks dual-buffer interleaving and continuous array read; requires external buffering logic for streaming use cases | Choose only if system already uses QSPI peripherals and does not require concurrent read/write or low-latency streaming |
Compared with AT45DB642D-MHN2B-T, the AT45DB641E-MHN2B-T offers proven field reliability but lacks extended temperature rating; versus W25Q64JWSSIQ, it provides superior streaming performance via dual buffers and RapidS™, though at the cost of QSPI compatibility and higher pin-efficiency.
Availability
AT45DB641E-MHN2B-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, industrial HMI, and medical diagnostic devices requiring stable component supply across long-lifecycle programs.
Supply support for AT45DB641E-MHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted microcontrollers, analog, power, and memory solutions for automotive, industrial, infrastructure, and IoT applications.
The AT45DB641E-MHN2B-T belongs to Renesas' DataFlash® family - engineered specifically for high-reliability, low-pin-count, sequential-access Flash storage in space- and power-constrained embedded systems.
FAQ
What is the default page size configured in the AT45DB641E-MHN2B-T?
The AT45DB641E-MHN2B-T is factory pre-configured with a 264-byte page size as the default. This setting is fixed and cannot be altered in-circuit. The 256-byte page option is available only on specific ordering variants - not on the AT45DB641E-MHN2B-T. Page size determines address mapping and buffer alignment, impacting firmware partitioning and driver compatibility.
Does the AT45DB641E-MHN2B-T support true random access like parallel NOR Flash?
No, the AT45DB641E-MHN2B-T is a sequential-access Flash device and does not support true random access. It requires SPI command sequences to read or write data - such as Continuous Array Read (0Bh opcode) or Main Memory Page Read (D2h opcode). Addressing is linear and page-aligned; there are no address pins or random-address decode logic.
Can the AT45DB641E-MHN2B-T be used with 1.8 V microcontrollers without level shifting?
Yes, the AT45DB641E-MHN2B-T operates from 1.7 V to 3.6 V, making it fully compatible with 1.8 V I/O domains. Its input thresholds are designed for 1.8 V logic levels, and its SO output drives valid logic highs above 0.7×VCC - eliminating need for external level shifters when interfaced with 1.8 V MCUs such as Renesas RA-series or STMicro STM32L4.
How does the dual-buffer architecture improve write performance in the AT45DB641E-MHN2B-T?
The AT45DB641E-MHN2B-T's two independent 256/264-byte SRAM buffers enable overlapping operations: while one buffer receives incoming data via SPI, the other can simultaneously program its contents into main memory. This interleaving reduces effective write latency by up to 50% in continuous streaming applications - a key advantage over single-buffer serial Flash devices.
Is the metal pad on the bottom of the AT45DB641E-MHN2B-T's DFN package electrically connected?
No, the exposed metal pad on the bottom of the AT45DB641E-MHN2B-T's 8-pad Ultra-thin DFN package is not internally connected to any voltage potential. It may be left as a "no connect" or tied to GND on the PCB for improved thermal dissipation and mechanical stability - but it must never be shorted to adjacent traces or vias.
AT45DB641E-MHN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 64Mbit
- Memory Organization:
- 256 Bytes x 32K pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 5ms
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-UDFN (5x6)
AT45DB641E-MHN2B-T FAQ
1.How can I place an order for AT45DB641E-MHN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB641E-MHN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB641E-MHN2B-T reliable?
The price and inventory of AT45DB641E-MHN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB641E-MHN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB641E-MHN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB641E-MHN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB641E-MHN2B-T?
AT45DB641E-MHN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB641E-MHN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB641E-MHN2B-T?
For technical support, including AT45DB641E-MHN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB641E-MHN2B-T requirements.
6.How does Aetrix verify that AT45DB641E-MHN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB641E-MHN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB641E-MHN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB641E-MHN2B-T?
All AT45DB641E-MHN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB641E-MHN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB641E-MHN2B-T part is unused and in its original packaging.
Return procedure for AT45DB641E-MHN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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