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Renesas AT45DB641E-MWHN2B-T
- Part No.:
- AT45DB641E-MWHN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
AT45DB641E-MWHN2B-T.pdf
- Description:
- IC FLASH 64MBIT SPI 85MHZ 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:7,789
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Product details
Overview
AT45DB641E-MWHN2B-T from Renesas Electronics is a 64-Mbit serial DataFlash memory with 2-Mbit extra capacity, operating from 1.7 V to 3.6 V, supporting SPI modes 0 and 3, RapidS™ high-speed interface up to 85 MHz, and featuring dual 256/264-byte SRAM buffers for concurrent read/write operations. It enables continuous data streaming in embedded voice recording, firmware storage, and industrial logging systems.
For engineers reviewing the AT45DB641E-MWHN2B-T datasheet, AT45DB641E-MWHN2B-T pinout, AT45DB641E-MWHN2B-T application, or AT45DB641E-MWHN2B-T equivalent, key selection criteria include its 8ns clock-to-output time, 400 nA ultra-deep power-down current, page/block/sector/chip erase flexibility, factory-configurable 256-byte page size, and hardware/software sector lockdown for secure firmware updates.
Technical Context
The AT45DB641E-MWHN2B-T implements a sequential-access Flash architecture with two independent SRAM buffers enabling true interleaved programming-data can be loaded into one buffer while the other is being written to main memory. Its RapidS™ mode supports high-frequency continuous array reads using opcodes 0Bh and 1Bh, achieving up to 85 MHz operation with tight timing control (tV ≤ 8 ns).
It integrates full protection logic including per-sector software/hardware write protection, permanent sector lockdown via OTP register, and a 128-byte security register (64 bytes factory-unique ID + 64 bytes user-programmable). All erase and program cycles are self-timed, eliminating external timing dependencies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 64 Mbit main memory + 2 Mbit extra space; organized as 32,768 pages of 256 or 264 bytes-supports flexible firmware partitioning and E2PROM emulation. |
| Supply Voltage | 1.7 V to 3.6 V single supply-enables direct interfacing with low-voltage MCUs (e.g., ARM Cortex-M0+/M4) without level shifters. |
| Max Clock Frequency | 85 MHz (RapidS™ mode)-delivers sustained read throughput >10 MB/s, critical for real-time audio buffering. |
| Power Consumption | 400 nA ultra-deep power-down current (typical)-extends battery life in always-on sensor nodes and portable medical devices. |
| Endurance & Retention | 100,000 program/erase cycles per page minimum; 20-year data retention-meets industrial-grade reliability requirements. |
| Erase Granularity | Page (256/264 B), Block (2 KB), Sector (256 KB), Chip (64 Mbit)-enables precise field firmware updates without full reflash. |
| Interface Protocol | SPI-compatible, modes 0 and 3; supports legacy (E8h) and RapidS™ (0Bh/1Bh) opcodes-ensures backward compatibility and performance scalability. |
Pinout & Package
AT45DB641E-MWHN2B-T uses an 8-pad Ultra-thin DFN package (5 × 6 × 0.6 mm), RoHS-compliant and halide-free. The exposed metal pad on the bottom is not internally connected and may be left floating or tied to GND for thermal/mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable signal; must transition low to initiate command sequence and high to terminate-controls device standby entry and SO tri-state behavior. |
| SCK | Serial Clock | Master-generated clock; rising edge latches SI data, falling edge clocks SO data-defines timing alignment for all SPI transactions. |
| SI | Serial Input | Command/address/data input line; ignored when CS is high-supports daisy-chaining in multi-device SPI buses. |
| SO | Serial Output | Data output line; high-impedance when CS is high-enables shared bus topology without external multiplexing. |
| WP | Write Protect | Hardware-enabled sector protection; active-low assertion locks protected sectors-provides tamper-resistant firmware update guardrails. |
| RESET | Reset Input | Active-low asynchronous reset; forces device into known state and clears status registers-essential for recovery after brown-out or communication errors. |
| VCC | Power Supply | 1.7–3.6 V core supply; powers logic, memory array, and I/O-compatible with Li-ion, coin-cell, and regulated DC-DC outputs. |
| GND | Ground | Reference node for all signals and power; must be low-impedance connection to minimize noise coupling into sensitive SPI lines. |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM Buffers | Two independent 256/264-byte buffers allow simultaneous data reception and main memory programming-eliminates write latency bottlenecks in continuous data acquisition. |
| RapidS™ High-Speed Read | Supports 85 MHz continuous array reads with dedicated opcodes (0Bh/1Bh)-achieves >10 MB/s throughput without burst-mode limitations. |
| Flexible Page Size | User- or factory-configurable 256-byte or 264-byte pages-optimizes memory utilization for fixed-size packet protocols or legacy DataFlash compatibility. |
| Program/Erase Suspend | Allows pausing active erase/program operations to service urgent read requests-critical for real-time systems requiring deterministic response times. |
| OTP Security Register | 128-byte register with 64-byte factory-unique ID and 64-byte user area-enables cryptographic key binding and secure boot verification. |
| Ultra-Deep Power-Down | 400 nA typical current draw with full state retention-enables multi-year operation on microampere-scale energy harvesting sources. |
Applications
| Voice Recording System | Firmware Storage for Industrial PLC |
|---|---|
Use Scenario: Continuous digitized audio capture at 16-bit/44.1 kHz with local buffering before SD card transfer. IC Role / Device Role / Timing Role: Primary nonvolatile buffer memory managing real-time write interleaving between dual SRAM buffers and Flash array. Use Value: Enables gapless recording via concurrent buffer fill and Flash page program, supported by 85 MHz RapidS™ read for fast playback streaming. | Use Scenario: Storing and updating programmable logic controller firmware in factory automation environments with strict revision control. IC Role / Device Role / Timing Role: Secure, field-upgradable code storage with hardware write protection and sector lockdown to prevent unauthorized modification. Use Value: Guarantees firmware integrity using 64-byte factory-unique ID for signature validation and per-sector lockdown to lock bootloader partitions permanently. |
| Portable Medical Sensor Logger | Smart Meter Firmware Vault |
Use Scenario: Battery-powered wearable device logging physiological data every 100 ms over multi-week periods. IC Role / Device Role / Timing Role: Low-power persistent storage handling intermittent writes and long-term retention under temperature variation. Use Value: Achieves >5-year battery life using 400 nA ultra-deep power-down mode between logging intervals and 20-year data retention at industrial temperatures. | Use Scenario: Utility smart meter storing encrypted firmware images and calibration tables subject to regulatory audit and remote OTA updates. IC Role / Device Role / Timing Role: Tamper-evident, sector-protected code vault supporting secure boot and rollback prevention during firmware upgrades. Use Value: Uses hardware WP pin + software sector protection register to enforce dual-layer write control, meeting IEC 62056 and ANSI C12.22 compliance requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W25Q64JVSSIQ | 64 Mbit NOR Flash, standard SPI (no RapidS™), 133 MHz max clock, no dual buffers or page-size configurability | Lacks concurrent buffer operation and ultra-low deep-power-down (2 µA vs. 400 nA); suited for code XIP, not streaming data | Choose W25Q64JVSSIQ only if code execute-in-place (XIP) capability is required and streaming throughput is secondary. |
| MX25L6433FZNI-10G | 64 Mbit NOR Flash, 104 MHz max clock, no RapidS™, no SRAM buffers, 2.7–3.6 V supply only | Higher voltage floor (2.7 V) excludes single-cell Li-ion use; no ultra-deep power-down mode or OTP security register | Select MX25L6433FZNI-10G when operating in 3.3 V systems with strict AEC-Q100 qualification needs but no streaming or ultra-low-power requirements. |
Compared with W25Q64JVSSIQ and MX25L6433FZNI-10G, the AT45DB641E-MWHN2B-T uniquely delivers concurrent buffer-based streaming, 400 nA ultra-deep power-down, and factory-programmed unique ID-making it irreplaceable for battery-constrained, high-throughput, secure firmware applications.
Availability
AT45DB641E-MWHN2B-T is available at Aetrix Electronics and suitable for voice recording systems, industrial PLC firmware storage, and portable medical sensor loggers requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for AT45DB641E-MWHN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT markets, with strong IP in Flash memory and microcontroller technologies.
The AT45DB641E-MWHN2B-T belongs to Renesas' DataFlash® family, designed specifically for high-reliability, low-pin-count, sequential-access storage in resource-constrained embedded systems where power efficiency and data integrity are critical.
FAQ
What is the maximum operating frequency of the AT45DB641E-MWHN2B-T in RapidS™ mode?
The AT45DB641E-MWHN2B-T supports up to 85 MHz in RapidS™ mode using opcodes 0Bh or 1Bh for continuous array reads. This enables sustained data throughput exceeding 10 MB/s, significantly higher than standard SPI mode limits. The 8ns clock-to-output time (tV) ensures timing margin for reliable high-speed sampling. AT45DB641E-MWHN2B-T maintains full functionality across its 1.7–3.6 V supply range at this frequency.
Does the AT45DB641E-MWHN2B-T support true concurrent read and write operations?
Yes-the AT45DB641E-MWHN2B-T features two fully independent 256/264-byte SRAM buffers that enable true concurrency: one buffer can be loaded via SI while the other is programmed into main memory. This eliminates write stalls during continuous data streams. AT45DB641E-MWHN2B-T also supports buffer-to-buffer transfers and auto-page rewrite, making it ideal for real-time logging and voice buffering applications.
How does the AT45DB641E-MWHN2B-T implement hardware write protection?
The AT45DB641E-MWHN2B-T uses the dedicated WP (Write Protect) pin to enable hardware-controlled sector protection. When WP is asserted low, selected sectors become read-only regardless of software commands. Combined with the sector protection register and lockdown capability, this provides three-tier protection: pin-level, register-level, and permanent OTP lockdown. AT45DB641E-MWHN2B-T requires both WP assertion and matching register bits to lock a sector.
What is the purpose of the 128-byte security register in the AT45DB641E-MWHN2B-T?
The 128-byte security register in the AT45DB641E-MWHN2B-T contains 64 bytes of factory-programmed unique identifier (for device authentication and secure boot binding) and 64 bytes of user-programmable space (for keys, certificates, or calibration data). It is one-time programmable and accessible only via dedicated SPI opcodes (77h). AT45DB641E-MWHN2B-T uses this register to establish cryptographic root-of-trust in safety-critical firmware deployments.
Can the AT45DB641E-MWHN2B-T operate from a single-cell lithium battery?
Yes-the AT45DB641E-MWHN2B-T operates down to 1.7 V, making it compatible with discharged single-cell Li-ion (2.5–4.2 V) and LiFePO₄ (2.0–3.65 V) batteries without regulation. Its 400 nA ultra-deep power-down current extends operational lifetime in battery-backed applications. AT45DB641E-MWHN2B-T maintains full read/write functionality across the entire 1.7–3.6 V range, including rapid wake-up from deep power-down states.
AT45DB641E-MWHN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 64Mbit
- Memory Organization:
- 256 Bytes x 32K pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 5ms
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VDFN (6x8)
AT45DB641E-MWHN2B-T FAQ
1.How can I place an order for AT45DB641E-MWHN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB641E-MWHN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB641E-MWHN2B-T reliable?
The price and inventory of AT45DB641E-MWHN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB641E-MWHN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB641E-MWHN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB641E-MWHN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB641E-MWHN2B-T?
AT45DB641E-MWHN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB641E-MWHN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB641E-MWHN2B-T?
For technical support, including AT45DB641E-MWHN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB641E-MWHN2B-T requirements.
6.How does Aetrix verify that AT45DB641E-MWHN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB641E-MWHN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB641E-MWHN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB641E-MWHN2B-T?
All AT45DB641E-MWHN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB641E-MWHN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB641E-MWHN2B-T part is unused and in its original packaging.
Return procedure for AT45DB641E-MWHN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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