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Renesas AT45DB641E-UUN2B-T
- Part No.:
- AT45DB641E-UUN2B-T
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-UFBGA, WLCSP
- Datasheet:
-
AT45DB641E-UUN2B-T.pdf
- Description:
- IC FLASH 64MBIT SPI 44WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:2,273
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Product details
Overview
AT45DB641E-UUN2B-T from Renesas Electronics is a 64-Mbit serial DataFlash memory with 2-Mbit extra capacity, supporting SPI modes 0 and 3 at up to 85 MHz, featuring dual 256/264-byte SRAM buffers, 1.7 V–3.6 V single-supply operation, and continuous array read capability - deployed in embedded firmware storage and voice/data logging systems.
For engineers reviewing the AT45DB641E-UUN2B-T datasheet, AT45DB641E-UUN2B-T pinout, AT45DB641E-UUN2B-T application, or AT45DB641E-UUN2B-T equivalent, key selection criteria include RapidS™ high-speed read timing (8 ns tV), ultra-deep power-down current (400 nA), page/block/sector/chip erase flexibility, OTP security register, and industrial temperature range compliance.
Technical Context
The AT45DB641E-UUN2B-T implements a serial sequential-access architecture with two independent SRAM buffers enabling concurrent buffer write and main memory reprogramming. Its memory array comprises 32,768 pages of either 256 or 264 bytes (factory-configurable), delivering 69,206,016 total bits including 2 Mbits of extra space.
It supports multiple operational modes: legacy SPI (03h), RapidS high-frequency (0Bh/1Bh), low-power read (01h), and Deep/Ultra-Deep Power-Down with hardware/software reset control. Sector protection, lockdown, and 128-byte OTP Security Register (64-byte factory ID + 64-byte user-programmable) provide layered data integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 64 Mbit main + 2 Mbit extra = 69,206,016 bits; organized as 32,768 × 256/264-byte pages |
| Interface & Speed | SPI-compatible (modes 0/3); up to 85 MHz clock rate; 8 ns max clock-to-output (tV) |
| Supply Voltage | 1.7 V to 3.6 V single supply; no high-voltage programming required |
| Power Consumption | 400 nA ultra-deep power-down (typ), 5 µA deep power-down (typ), 25 µA standby (typ) |
| Erase Flexibility | Page (256/264 B), block (2 KB), sector (256 KB), chip (64 Mbit) - all suspend/resume capable |
| Data Retention & Endurance | 20 years retention; ≥100,000 program/erase cycles per page |
| Security Features | 128-byte OTP Security Register (64-byte factory UID + 64-byte user space); sector lockdown; individual sector protection |
Pinout & Package
AT45DB641E-UUN2B-T is packaged in an 8-pad Ultra-thin DFN (5 × 6 × 0.6 mm) with exposed metal pad (NC or GND). Pin functions are validated per Renesas DS-AT45DB641E-027 Rev. O, Page 7–8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS | Chip Select | Active-low enable; initiates command sequence on high-to-low transition; places SO in high-Z when deasserted |
| SCK | Serial Clock | Controls data timing; SI latched on rising edge, SO driven on falling edge |
| SI | Serial Input | Command, address, and input data path; ignored when CS is high |
| SO | Serial Output | Data output path; high-impedance when CS is deasserted |
| WP | Write Protect | Hardware-enabled sector protection; active-low; prevents accidental program/erase when asserted |
| RESET | Reset Input | Active-low hardware reset; resets internal state and command logic without power cycle |
| VCC | Power Supply | 1.7 V–3.6 V primary supply; powers core, I/O, and charge pump |
| GND | Ground | Reference for VCC and all I/O signals; connects to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Dual SRAM Buffers | Two independent 256/264-byte buffers enable simultaneous receive-and-reprogram operation, eliminating write latency bottlenecks in streaming applications |
| RapidS™ High-Speed Read | Supports 0Bh/1Bh opcodes for >50 MHz sustained reads with 8 ns tV - critical for real-time audio/video buffering |
| Flexible Erase Granularity | Four-tier erase (page/block/sector/chip) with suspend/resume allows background maintenance without halting host operations |
| User-Configurable Page Size | Factory-set 256-byte or 264-byte pages; enables optimization for legacy compatibility (256 B) or DataFlash efficiency (264 B) |
| Industrial-Grade Reliability | Rated for full industrial temperature range (–40°C to +85°C); 20-year data retention; 100k-cycle endurance per page |
| Hardware Security Enforcement | WP pin + sector lockdown + OTP Security Register provide tamper-resistant firmware storage and device identity binding |
Applications
| Firmware Storage | Voice/Data Logging |
|---|---|
|
Use Scenario: Storing boot code, configuration tables, and field-upgradable firmware images in microcontroller-based edge nodes. IC Role / Device Role / Timing Role: Nonvolatile program memory accessed via SPI during cold start and OTA updates. Use Value: Dual-buffer interleaving enables seamless firmware patching without interrupting real-time sensor polling. |
Use Scenario: Capturing timestamped audio snippets or sensor telemetry in battery-powered environmental monitors. IC Role / Device Role / Timing Role: Sequential-access data sink with low-power Deep Power-Down between recording intervals. Use Value: 400 nA ultra-deep power-down current extends multi-year battery life in remote deployments. |
| Industrial HMI Display | Medical Diagnostic Equipment |
|
Use Scenario: Hosting GUI assets (fonts, icons, bitmaps) and localized language strings for touch-panel HMIs. IC Role / Device Role / Timing Role: High-bandwidth SPI slave delivering burst-read graphics data to display controller. Use Value: RapidS™ 85 MHz interface sustains >10 MB/s read throughput for smooth UI rendering. |
Use Scenario: Securely storing calibration coefficients, patient history logs, and regulatory audit trails in portable diagnostics. IC Role / Device Role / Timing Role: Tamper-evident nonvolatile memory with sector lockdown for HIPAA-compliant data integrity. Use Value: Factory-programmed 64-byte UID enables device-level traceability and cryptographic key binding. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AT45DB642D-UUN2B-T | Successor generation with identical pinout and command set; higher endurance (200k cycles) and extended voltage range (1.65–3.6 V) | Preferred for new designs requiring longer field life or wider supply tolerance; not drop-in due to minor timing spec changes | Select AT45DB642D-UUN2B-T for future-proofing where qualification time permits; retain AT45DB641E-UUN2B-T for legacy replacement or cost-sensitive volume production |
| W25Q64JWSSIQ | Standard quad-SPI NOR Flash (64 Mbit); lacks SRAM buffers, RapidS mode, and page-size configurability; supports QPI/DTR modes | Better suited for XIP execution and random-access code fetch; unsuitable for high-throughput sequential logging without external buffering | Choose W25Q64JWSSIQ when system requires execute-in-place or quad-I/O bandwidth; avoid for buffer-dependent streaming use cases |
Compared with AT45DB642D-UUN2B-T, the AT45DB641E-UUN2B-T offers proven stability and lower unit cost but trades endurance and voltage margin; versus W25Q64JWSSIQ, it delivers superior sequential throughput and built-in buffering at the expense of random-access flexibility and industry-standard NOR command compatibility.
Availability
AT45DB641E-UUN2B-T is available at Aetrix Electronics and suitable for firmware storage, voice/data logging, industrial HMI display, and medical diagnostic equipment requiring stable component supply across long-lifecycle programs.
Supply support for AT45DB641E-UUN2B-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT markets.
The AT45DB641E-UUN2B-T belongs to Renesas' DataFlash® family, engineered specifically for high-reliability, low-pin-count sequential data storage in resource-constrained embedded systems.
FAQ
What is the page size configuration for AT45DB641E-UUN2B-T?
The AT45DB641E-UUN2B-T supports user-configurable page sizes of either 256 bytes or 264 bytes. The default factory setting is 264 bytes per page, matching the standard DataFlash format. Configuration is performed via the Buffer and Page Size Configuration Commands (DS-AT45DB641E-027, Table 22), and the setting persists across power cycles. This flexibility allows optimization for legacy compatibility (256 B) or efficient DataFlash usage (264 B).
Does AT45DB641E-UUN2B-T support true random access like parallel NOR Flash?
No, the AT45DB641E-UUN2B-T is a sequential-access serial Flash device and does not support true random byte-addressable reads. It uses SPI-based command sequences to access data by page or continuous array - optimized for streaming rather than instruction fetch. For XIP or random-access requirements, standard NOR Flash such as W25Q64JWSSIQ is more appropriate, though it lacks the AT45DB641E-UUN2B-T's dual-buffering and RapidS™ speed.
How does the dual-buffer architecture of AT45DB641E-UUN2B-T improve system performance?
The AT45DB641E-UUN2B-T integrates two independent 256/264-byte SRAM buffers that operate asynchronously from main memory. While one buffer receives incoming data via SPI, the other can simultaneously program a full page into flash - eliminating the traditional "wait-for-write" bottleneck. This interleaving enables sustained high-throughput data logging and firmware updates without CPU intervention or external RAM buffering.
What security mechanisms are implemented in AT45DB641E-UUN2B-T?
The AT45DB641E-UUN2B-T provides three hardware-enforced security layers: (1) Write Protect (WP) pin for physical sector lockout, (2) programmable Sector Protection Register for software-controlled read/write blocking, and (3) 128-byte OTP Security Register containing 64 bytes of factory-programmed unique ID and 64 bytes user-programmable for keys or certificates. Sector lockdown permanently disables writes to protected regions after freeze activation.
What is the difference between Deep Power-Down and Ultra-Deep Power-Down modes in AT45DB641E-UUN2B-T?
Deep Power-Down (command 0xB9) reduces current to 5 µA (typ) and retains all register and memory states; resume requires CS pulse and status polling. Ultra-Deep Power-Down (command 0x79) further lowers current to 400 nA (typ) but clears volatile registers and requires full initialization upon wake. Both modes preserve main memory and OTP contents, making them ideal for battery-critical applications where wake latency is secondary to energy conservation.
AT45DB641E-UUN2B-T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-UFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH
- Memory Size:
- 64Mbit
- Memory Organization:
- 256 Bytes x 32K pages
- Memory Interface:
- SPI
- Clock Frequency:
- 85 MHz
- Write Cycle Time - Word, Page:
- 8µs, 5ms
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-WLCSP (3.52x4.22)
AT45DB641E-UUN2B-T FAQ
1.How can I place an order for AT45DB641E-UUN2B-T through Aetrix?
Please submit a Request for Quotation (RFQ) for AT45DB641E-UUN2B-T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AT45DB641E-UUN2B-T reliable?
The price and inventory of AT45DB641E-UUN2B-T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AT45DB641E-UUN2B-T is usually 5 days.
3.What payment methods are accepted for AT45DB641E-UUN2B-T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AT45DB641E-UUN2B-T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AT45DB641E-UUN2B-T?
AT45DB641E-UUN2B-T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AT45DB641E-UUN2B-T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AT45DB641E-UUN2B-T?
For technical support, including AT45DB641E-UUN2B-T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AT45DB641E-UUN2B-T requirements.
6.How does Aetrix verify that AT45DB641E-UUN2B-T is sourced from the original manufacturer or authorized distributors?
All AT45DB641E-UUN2B-T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AT45DB641E-UUN2B-T meets industry standards.
7.What is the process for return or replacement of AT45DB641E-UUN2B-T?
All AT45DB641E-UUN2B-T units undergo pre-shipment inspection (PSI). If there is an issue with AT45DB641E-UUN2B-T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AT45DB641E-UUN2B-T part is unused and in its original packaging.
Return procedure for AT45DB641E-UUN2B-T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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