Infineon Technologies BA592E6327HTSA1

Overview

BA592E6327HTSA1 from Infineon Technologies is a silicon RF switching diode in SC79 package, configured as a single anode-cathode junction for high-frequency signal path control. It delivers 0.45 Ω typical forward resistance at 3 mA/100 MHz, 0.65–0.92 pF capacitance (1 MHz, VR = 1–3 V), and 23.5 dB isolation at 100 MHz - enabling band switching in TV/VTR tuners and mobile RF front-ends.

For engineers reviewing the BA592E6327HTSA1 datasheet, BA592E6327HTSA1 pinout, BA592E6327HTSA1 application, or BA592E6327HTSA1 equivalent, key selection criteria include RF insertion loss (<0.1 dB at 1.8 GHz, IF = 0.1 mA), reverse voltage rating (35 V), junction temperature limit (150 °C), and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This diode operates as a voltage-controlled RF switch: forward bias enables low-loss signal conduction (rf ≤ 0.7 Ω), while reverse bias provides high isolation (>23 dB at 100 MHz) via low capacitance (CT ≤ 0.92 pF) and high reverse parallel resistance (RP ≥ 100 kΩ at 100 MHz). Its 120 ns charge carrier lifetime supports fast switching in tuner band-selection circuits.

The SC79 package's 1.3 mm × 0.7 mm footprint and cathode-marked terminal layout ensure compatibility with automated RF board assembly. Thermal resistance RthJS ≤ 135 K/W allows sustained operation up to 150 °C junction temperature under pulsed RF conditions.

Key Specifications

Pinout & Package

BA592E6327HTSA1 uses the SC79 surface-mount package (1.3 mm × 0.7 mm, 0.5 mm height), featuring a single anode-cathode configuration with cathode marked by a bar on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BAR63-02W and BA892-02V, BA592E6327HTSA1 balances low rf (0.45 Ω), moderate CT (0.65–0.92 pF), and AEC-Q101 compliance - making it optimal for cost-sensitive automotive and consumer TV tuner designs where thermal and size constraints are tightly coupled.

Availability

BA592E6327HTSA1 is available at Aetrix Electronics and suitable for TV tuner band switching, mobile antenna diversity, and automotive DAB+ receiver applications requiring stable component supply and AEC-Q101 assurance.

Supply support for BA592E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon diodes and GaN transistors.

BA592E6327HTSA1 belongs to Infineon's RF switching diode product line, engineered specifically for high-isolation, low-loss signal routing in broadcast and wireless communication front-ends.

FAQ

What is the maximum RF frequency at which BA592E6327HTSA1 maintains usable isolation?

BA592E6327HTSA1 provides ≥5.5 dB isolation at 1 GHz (VR = 0 V), with 23.5 dB at 100 MHz and 10.5 dB at 470 MHz. Its usable isolation range spans 100 MHz to 1 GHz, validated per S-parameter measurements in series configuration with 50 Ω system impedance.

Does BA592E6327HTSA1 support DC bias control in RF switch designs?

Yes - it is designed for DC-biased RF switching: forward bias (IF ≥ 1 mA) enables conduction; reverse bias (VR ≤ 35 V) activates isolation. The 20 nA IR max at 20 V ensures minimal DC power draw in always-on tuner control lines.

How does the SC79 package affect PCB layout for RF performance?

The SC79 package's 1.3 mm × 0.7 mm footprint minimizes parasitic inductance and enables short, symmetric RF traces. Its cathode-marked orientation and 0.5 mm profile reduce ground loop area - critical for maintaining 50 Ω impedance and minimizing radiation loss above 500 MHz.

Is BA592E6327HTSA1 suitable for hot-swap RF module replacement?

No - it is not rated for live-insertion. The 35 V VR and 100 mA IF ratings assume controlled bias sequencing. Hot-swap operation risks transient overvoltage exceeding RthJS limits and degrading τrr stability; external protection circuitry is required for such use cases.