Infineon Technologies BAT1503WE6327HTSA1

Overview

BAT1503WE6327HTSA1 from Infineon is a single silicon RF Schottky diode with N-type low barrier structure, integrated on-chip guard ring for over-voltage protection, 0.28 pF junction capacitance at 1 MHz, 1.8 nH series inductance, and rated for 4 V reverse voltage. It serves as a mixer or detector in high-frequency industrial radar and telematic systems up to 12 GHz.

For engineers reviewing the BAT1503WE6327HTSA1 datasheet, BAT1503WE6327HTSA1 pinout, BAT1503WE6327HTSA1 application, or BAT1503WE6327HTSA1 equivalent, key selection criteria include RF forward voltage (0.25 V typ. @ 10 mA), reverse leakage (<5 µA @ 1 V), SOD323 package compatibility, and 12 GHz operational bandwidth.

Technical Context

This diode employs a low-barrier silicon Schottky architecture optimized for RF signal rectification and mixing. Its integrated guard ring ensures robustness against transient over-voltage events without external clamping components.

Designed for operation up to 12 GHz, it delivers stable small-signal performance due to minimal parasitic capacitance (0.28 pF) and inductance (1.8 nH), enabling accurate detection and frequency conversion in narrow-band sensor interfaces and industrial radar front-ends.

Key Specifications

Pinout & Package

The BAT1503WE6327HTSA1 is housed in an industry-standard SOD323 surface-mount package (2.5 mm × 1.25 mm × 0.9 mm), RoHS-compliant and halogen-free, with cathode marked by a white band on lead 2.

Key Features

Applications

Availability

BAT1503WE6327HTSA1 is available at Aetrix Electronics and suitable for industrial radar compensators, security sensor interfaces, and telematic systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BAT1503WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to JEDEC standards.

The BAT15-03W belongs to Infineon's RF Schottky diode product line, engineered specifically for high-frequency mixer and detector functions in industrial and security radar applications up to 12 GHz.

FAQ

What is the maximum operating frequency of BAT1503WE6327HTSA1?

The BAT1503WE6327HTSA1 is characterized and qualified for reliable operation up to 12 GHz in mixer and detector applications. Performance data-including capacitance vs. voltage curves and forward current characteristics-are validated through RF test fixtures per Infineon's datasheet v1.0 (2018).

Is BAT1503WE6327HTSA1 suitable for DC-coupled detector circuits?

Yes-its low 0.25 V typical forward voltage at 10 mA and sub-5 µA reverse leakage at 1 V enable effective DC-coupled envelope detection. However, thermal derating must be applied above 78 °C soldering point temperature per RthJS = 715 K/W.

Does BAT1503WE6327HTSA1 require external ESD protection?

No-BAT1503WE6327HTSA1 integrates an on-chip guard ring that provides inherent ESD robustness. It is classified as ESD-sensitive (HBM Class 2), but the guard ring eliminates need for discrete TVS or RC networks in most RF detector layouts.

How does the SOD323 package affect RF layout design?

The SOD323 footprint (2.5 mm × 1.25 mm) imposes strict pad geometry and ground plane clearance requirements. Its 1.8 nH series inductance must be de-embedded in matching networks; recommended layout uses symmetric microstrip feeds and minimized stub lengths to preserve 12 GHz performance.