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Infineon Technologies BAT6302VH6327XTSA1
- Part No.:
- BAT6302VH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAT6302VH6327XTSA1.pdf
- Description:
- RF DIODE SCHOTTKY 3V 100MW SC79
- Quantity:
- Payment:
- Shipping:
Inventory:20,667
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Product details
Overview
BAT6302VH6327XTSA1 from Infineon Technologies is a silicon Schottky diode configured as a single parallel pair in SC79 (SOT343) package, rated for 3 V reverse voltage, 100 mA forward current, and 100 mW power dissipation; optimized as a zero-bias RF detector diode for GHz-frequency signal demodulation in wireless receivers.
For engineers reviewing the BAT6302VH6327XTSA1 datasheet, BAT6302VH6327XTSA1 pinout, BAT6302VH6327XTSA1 application, or BAT6302VH6327XTSA1 equivalent, key selection criteria include low forward voltage (190–300 mV at 1 mA), ultra-low junction capacitance (0.65–0.85 pF at 0.2 V), differential resistance (~30 kΩ at 0 V), and ESD-sensitive handling requirements.
Technical Context
This diode operates without DC bias, leveraging its low barrier height and minimal series inductance (0.6 nH) to enable direct RF-to-DC conversion at frequencies up to 2.4 GHz. Its matched-pair configuration ensures consistent VF tracking (ΔVF ≤ 20 mV) for balanced detector topologies.
The SC79 package provides thermal resistance of ≤295 K/W (junction-to-soldering point), supporting operation up to 150°C junction temperature while maintaining stable CT vs. VR characteristics across 0–3 V reverse bias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 3 V - Maximum DC or peak RF reverse bias before breakdown; defines safe operating range in detector/clamp circuits. |
| Forward Voltage (VF) | 190–300 mV @ 1 mA - Enables efficient zero-bias detection with minimal signal loss and low insertion loss in RF paths. |
| Junction Capacitance (CT) | 0.65–0.85 pF @ 0.2 V, 1 MHz - Ensures high impedance at GHz frequencies, preserving detector sensitivity and bandwidth. |
| Differential Resistance (R₀) | 30 kΩ @ 0 V, 10 kHz - Reflects dynamic small-signal resistance critical for RF envelope detection linearity. |
| Thermal Resistance (RthJS) | ≤295 K/W - Limits junction temperature rise under continuous 100 mW dissipation, enabling reliable operation in compact RF modules. |
| ESD Sensitivity | Class 1C (IEC 61000-4-2) - Requires handling per ESD control protocols; prevents gate oxide damage during assembly. |
Pinout & Package
SC79 (SOT343) package: 4-terminal surface-mount device with exposed die pad for thermal enhancement; dimensions 2.1 × 1.3 × 0.9 mm (L × W × H); pin 1 marked by beveled corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode A1 | Primary anode terminal for first diode element in parallel pair; connects to RF input node in detector circuit. |
| 2 | Cathode Common | Shared cathode connection for both diodes; serves as RF ground reference and DC output return path. |
| 3 | Anode A2 | Second anode terminal for matched diode element; enables balanced or differential detector configurations. |
| 4 | Die Pad (Exposed) | Thermally conductive backside metal; must be soldered to PCB thermal pad for RthJS ≤ 295 K/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Zero-bias operation | Enables RF detection without external bias supply, reducing component count and power consumption in battery-powered receivers. |
| Matched dual-anode structure | ΔVF ≤ 20 mV ensures amplitude balance in push-pull or I/Q detector architectures for improved image rejection. |
| Ultra-low CT variation with VR | Capacitance remains stable from 0–3 V reverse bias, minimizing detuning effects in broadband RF front-ends. |
| Pb-free RoHS-compliant packaging | Meets environmental compliance for global electronics manufacturing without compromising RF performance or thermal reliability. |
Applications
| Wireless Remote Controls | ISM Band Receiver Front-Ends |
|---|---|
Use Scenario: 315/433 MHz ASK/OOK demodulation in garage door openers and key fobs. IC Role / Device Role / Timing Role: Zero-bias RF detector converting modulated carrier into baseband logic-level pulses. Use Value: Eliminates need for bias network, reducing BOM cost and PCB area while maintaining >70 dB dynamic range. | Use Scenario: Signal strength indication (RSSI) and envelope detection in 2.4 GHz Zigbee/Bluetooth LE receivers. IC Role / Device Role / Timing Role: High-frequency detector diode in passive mixer or peak-detector stage. Use Value: Sub-1 pF CT and 30 kΩ R₀ preserve RF bandwidth and improve detector sensitivity down to –30 dBm input. |
| RF Identification Tags | Low-Power IoT Sensor Nodes |
Use Scenario: Backscatter modulation detection in passive UHF RFID tag readers. IC Role / Device Role / Timing Role: RF-to-DC converter harvesting energy and decoding command envelopes. Use Value: 190 mV typ. VF enables usable output voltage from weak incident RF fields (< –15 dBm). | Use Scenario: Wake-up receiver in ultra-low-power sensor nodes using sub-GHz ISM bands. IC Role / Device Role / Timing Role: Low-leakage detector triggering MCU wake-up on valid preamble detection. Use Value: IR ≤ 10 µA at 3 V reverse bias minimizes standby current, extending battery life beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar zero-bias RF detector applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SKY13317-374LF | Higher CT (1.2 pF), integrated matching network, 50 Ω input/output; requires external DC blocking. | Designed for 50 Ω system integration; less suitable for discrete detector designs with custom impedance transformation. | Select when full 50 Ω interface and broadband 100 MHz–6 GHz coverage are required over discrete flexibility. |
| BAR63-02V | Identical electrical specs and SC79 package; same VF, CT, and R₀; differs only in marking and reel packaging (H6327 vs. standard). | No functional difference; qualified for identical detector and mixer applications. | Drop-in replacement where alternate reel code or traceability requirements apply; no redesign needed. |
Compared with SKY13317-374LF, BAT6302VH6327XTSA1 offers lower capacitance and discrete layout freedom; versus BAR63-02V, it shares identical performance but provides distinct logistics traceability via H6327XTSA1 reel coding.
Availability
BAT6302VH6327XTSA1 is available at Aetrix Electronics and suitable for wireless remote controls, ISM band receiver front-ends, and low-power IoT sensor nodes requiring stable component supply and RoHS-compliant sourcing.
Supply support for BAT6302VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon and SiC power devices and RF components.
BAT6302VH6327XTSA1 belongs to Infineon's high-frequency Schottky diode product line, engineered specifically for zero-bias RF detection, envelope demodulation, and low-leakage switching in sub-GHz to 2.4 GHz wireless systems.
FAQ
Is BAT6302VH6327XTSA1 suitable for 5.8 GHz ISM band applications?
No - its specified performance (including CT vs. VR curves and detector efficiency data) is validated only up to 2.4 GHz. At 5.8 GHz, parasitic inductance (0.6 nH) and package resonance degrade detection sensitivity and introduce phase error; use BAT6304V or dedicated GaAs diodes for 5.8 GHz.
What is the recommended PCB layout for optimal thermal performance?
Connect the exposed die pad (Pin 4) to a minimum 3 mm² copper thermal pad with ≥4 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) to an internal ground plane. Avoid solder mask over the pad and use 100% stencil aperture to ensure void-free solder joint for RthJS ≤ 295 K/W.
Can BAT6302VH6327XTSA1 be used as a low-loss RF switch?
No - it lacks controlled on-resistance and off-isolation specifications for switching; its 30 kΩ R₀ and 10 µA IR are optimized for detection, not signal routing. Use dedicated RF switches like BGS12PL6 or SMP1320 for switching applications.
Does the "H6327" suffix indicate a different electrical specification?
No - "H6327" denotes Infineon's tape-and-reel packaging code (3,000 pieces/reel, ø180 mm) and date code format; all electrical, thermal, and mechanical specifications match the base BAT63-02V type as defined in the 2011 datasheet revision.
BAT6302VH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Type:
- Schottky - Single
- Voltage - Peak Reverse (Max):
- 3V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.85pF @ 0.2V, 1MHz
- Resistance @ If, F:
- -
- Power Dissipation (Max):
- 100 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SC79-2
BAT6302VH6327XTSA1 FAQ
1.How can I place an order for BAT6302VH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAT6302VH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAT6302VH6327XTSA1 reliable?
The price and inventory of BAT6302VH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAT6302VH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAT6302VH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAT6302VH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAT6302VH6327XTSA1?
BAT6302VH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAT6302VH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAT6302VH6327XTSA1?
For technical support, including BAT6302VH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAT6302VH6327XTSA1 requirements.
6.How does Aetrix verify that BAT6302VH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAT6302VH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAT6302VH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAT6302VH6327XTSA1?
All BAT6302VH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAT6302VH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAT6302VH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAT6302VH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAT6302VH6327XTSA1 Tags
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