Infineon Technologies BA592E6433HTMA1

Overview

BA592E6433HTMA1 from ROHM Semiconductor is a silicon RF switching diode in SC79 package, configured as a single anode-cathode junction for high-frequency band switching. It delivers 0.45 Ω typical forward resistance at 3 mA/100 MHz, 0.65–1.4 pF capacitance (1 MHz–100 MHz), and 23.5 dB isolation at 100 MHz - enabling low-loss signal routing in TV tuner front-ends.

For engineers reviewing the BA592E6433HTMA1 datasheet, BA592E6433HTMA1 pinout, BA592E6433HTMA1 application, or BA592E6433HTMA1 equivalent, key selection criteria include RF insertion loss ≤0.5 dB at 1.8 GHz, reverse voltage rating of 35 V, junction temperature limit of 150 °C, and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This diode operates as a voltage-controlled RF switch in series configuration, leveraging low charge carrier lifetime (120 ns typ.) and narrow I-region width (3 µm) to achieve fast switching with minimal distortion. Its SCD80/SC79 footprint supports compact tuner PCB layouts while maintaining thermal resistance ≤120 K/W (junction-to-soldering point).

Designed for DC-biased RF path control, it exhibits monotonic capacitance reduction from 1.4 pF @ 0 V to 0.65 pF @ 1 V (1 MHz), and maintains >100 kΩ reverse parallel resistance at 100 MHz - critical for impedance stability in 50 Ω RF systems.

Key Specifications

Pinout & Package

BA592E6433HTMA1 uses the SC79 surface-mount package (1.3 mm × 0.7 mm × 0.5 mm), featuring a single cathode-marked terminal on the top surface and solderable anode/cathode pads on the bottom. The package is RoHS-compliant and qualified per AEC-Q101.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BA892-02V and BAR63-02W, BA592E6433HTMA1 uniquely balances 0.45 Ω forward resistance, AEC-Q101 compliance, and 1.4 pF max capacitance - making it optimal for automotive and broadcast tuner applications demanding both reliability and RF linearity.

Availability

BA592E6433HTMA1 is available at Aetrix Electronics and suitable for TV tuner front-ends, automotive infotainment systems, and mobile DVB-T2 receivers requiring stable component supply across extended temperature ranges and automotive qualification.

Supply support for BA592E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions, with core expertise in discrete devices and automotive-grade components.

The BA592 series belongs to ROHM's RF switching diode product line, engineered specifically for high-isolation, low-loss band selection in broadcast and mobile tuner applications - emphasizing thermal robustness and AEC-Q101 reliability.

FAQ

What is the maximum RF frequency at which BA592E6433HTMA1 maintains usable insertion loss?

BA592E6433HTMA1 maintains ≤0.5 dB insertion loss up to 1.8 GHz at 3 mA bias, with measured data extending to 3 GHz showing ≤1.2 dB loss. Performance degrades above 3 GHz due to parasitic inductance (0.6 nH) and capacitance roll-off; it is not characterized for millimeter-wave use.

Can BA592E6433HTMA1 be used in shunt configuration?

No - BA592E6433HTMA1 is specified and characterized only for series-switch topology. Its isolation and insertion loss metrics assume series placement in the RF path; shunt use would violate the 0.45 Ω forward resistance design intent and yield unverified impedance mismatch.

Does the "E6433" suffix indicate tape-and-reel packaging?

Yes - the "E6433" suffix denotes standard 8,000-piece tape-and-reel packaging on 180 mm reels with 2 mm pitch, per ROHM's SC79 packing specification. This matches the "Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)" detail in the official package documentation.

How does the 120 ns charge carrier lifetime affect switching speed in burst-mode applications?

The 120 ns typical reverse recovery time (τ_rr) enables clean transitions between RF ON/OFF states at ≤1 MHz repetition rates. In LTE TDD burst modes (e.g., 1 ms ON / 1 ms OFF), it avoids residual conduction that could cause inter-symbol interference or spectral regrowth.