Infineon Technologies BA 595 B6327

Overview

BA595 B6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in TV-satellite tuners, featuring 50 V reverse voltage rating, 50 mA forward current capability, 0.26 pF capacitance at 100 MHz (VR = 0 V), and 22 Ω forward resistance at 100 MHz (IF = 1.5 mA).

For engineers reviewing the BA595 B6327 datasheet, BA595 B6327 pinout, BA595 B6327 application, or BA595 B6327 equivalent, key selection criteria include low harmonic distortion, AEC-Q101 qualification, SCD80 package thermal resistance ≤95 K/W, and sub-2 GHz RF performance with <1600 ns reverse recovery time.

Technical Context

This PIN diode operates as a current-controlled RF resistor, where forward bias modulates series resistance (rf) from ~40 Ω at 1.5 mA to ~4.5 Ω at 10 mA at 100 MHz, enabling precise RF signal attenuation. Its I-region width of 130 µm supports fast carrier lifetime control.

Capacitance varies from 0.4 pF at VR = 0 V to 0.22 pF at VR = 10 V (1 MHz), providing voltage-tunable impedance for antenna switching. Reverse parallel resistance exceeds 50 kΩ at 100 MHz (VR = 1 V), ensuring high isolation in shunt configurations.

Key Specifications

Pinout & Package

The BA595 B6327 is housed in the SCD80 surface-mount package (1.3 mm × 0.7 mm × 0.35 mm), featuring a single anode-cathode configuration with cathode marked by laser etching on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR63-02W and BA895, BA595 B6327 offers the best balance of low capacitance, moderate switching speed, and robust thermal performance in SCD80 - making it optimal for thermally demanding, high-isolation TV-satellite tuner designs.

Availability

BA595 B6327 is available at Aetrix Electronics and suitable for TV-satellite tuners, automotive digital TV receivers, and RF attenuator modules requiring stable component supply, AEC-Q101 compliance, and consistent SCD80 packaging.

Supply support for BA595 B6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949.

The BA595 belongs to Infineon's high-frequency discrete diode product line, engineered specifically for low-distortion RF switching and attenuation in broadcast and satellite reception systems.

FAQ

What is the maximum RF frequency range supported by BA595 B6327?

The BA595 B6327 is characterized for operation from 1 MHz to 2 GHz, with verified performance metrics including capacitance, resistance, and isolation across this band. Its 0.26 pF CT at 100 MHz and 50 kΩ RP at 1 GHz confirm usable response up to 2 GHz in practical TV tuner layouts.

Is BA595 B6327 suitable for DC-coupled RF switch designs?

No - BA595 B6327 requires AC coupling or bias chokes to isolate DC control current from the RF signal path. Its forward resistance is current-dependent, so DC bias must be injected via high-impedance paths to avoid loading the RF circuit.

How does the SCD80 package affect thermal performance compared to SOD323?

The SCD80 package delivers RthJS ≤95 K/W, significantly better than SOD323's ≤370 K/W (as seen in BAR63-02W), enabling higher continuous RF power handling and improved reliability in compact tuner modules with limited airflow.

Can BA595 B6327 replace BA885 in existing designs?

Yes - BA595 and BA885 share identical SCD80 packaging, pinout, and maximum ratings (50 V VR, 50 mA IF). However, BA595 has higher LS (1.8 nH vs. 0.8 nH) and longer τrr (1600 ns), making it preferable for lower-distortion, higher-isolation applications where speed is not critical.