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Infineon Technologies BA 779 E6327

Part No.:
BA 779 E6327
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBA 779 E6327.pdf
Description:
RF DIODE PIN 50V SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,048

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Product details

Overview

BA779 E6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in TV-satellite tuner front-ends, featuring 50 V reverse voltage rating, 50 mA forward current capability, 0.26 pF capacitance at 0 V/100 MHz, ≤370 K/W junction-to-soldering-point thermal resistance, and AEC-Q101 qualification for automotive-grade reliability.

For engineers reviewing the BA779 E6327 datasheet, BA779 E6327 pinout, BA779 E6327 application in antenna switching, or BA779 E6327 equivalent for RF attenuator design, this part delivers verified low-harmonic performance, stable CT-V characteristics across 1 MHz–2 GHz, and RoHS-compliant SOT-23 packaging with traceable thermal behavior under RF bias conditions.

Technical Context

The BA779 operates as a current-controlled RF resistor where forward bias modulates series resistance (rf = 4.5–7 Ω at 10 mA/100 MHz), while reverse bias maintains low capacitance (CT = 0.22–0.6 pF over 0–10 V at 1 MHz) and high isolation via RP ≥ 10 kΩ at 1 GHz. Its I-region width of 130 µm enables fast carrier lifetime (τrr = 1600 ns) suitable for broadband switching.

Designed for operation from –55 °C to +125 °C, it sustains 150 °C junction temperature with validated thermal resistance (RthJS ≤ 370 K/W) and exhibits <20 nA reverse leakage at 30 V, supporting stable RF path control in thermally constrained tuner modules without harmonic distortion degradation.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)50 V - defines maximum RF signal swing before breakdown in shunt-switch configurations
Forward Current (IF)50 mA - sets upper limit for DC bias current used to tune rf in variable attenuator topologies
Capacitance (CT)0.26 pF @ 0 V / 100 MHz - determines insertion loss and impedance matching in 50 Ω antenna switch paths
Forward Resistance (rf)4.5 Ω @ 10 mA / 100 MHz - establishes minimum RF insertion loss when diode is forward-biased in series switch legs
Reverse Parallel Resistance (RP)≥10 kΩ @ 0 V / 1 GHz - ensures high isolation (>30 dB) between RF ports in transmit/receive antenna sharing circuits
Carrier Lifetime (τrr)1600 ns - enables sub-microsecond switching transitions compatible with digital tuner AGC timing requirements

Pinout & Package

BA779 E6327 is housed in a standard SOT-23 package (JEDEC TO-236AB), with 3 terminals: anode, cathode, and case-connected substrate (pin 3). Thermal path is optimized through the exposed die pad connected to pin 3, enabling direct soldering to PCB ground planes for RthJS ≤ 370 K/W.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeDC forward bias input; connects to RF choke or current source for rf control in series-switch mode
Pin 2CathodeRF signal path terminal; used as common node in shunt-switch or π-attenuator configurations
Pin 3Case / SubstrateThermally conductive ground reference; must be soldered to PCB copper pour for specified RthJS

Key Features

FeatureDesign Value
Low Harmonic GenerationVerified suppression of 2nd/3rd harmonics in 1–2 GHz band, critical for adjacent-channel interference mitigation in DVB-S2 tuners
AEC-Q101 QualifiedValidated for automotive satellite receiver modules operating in –40 °C to +105 °C ambient with full temperature cycling and HTRB stress compliance
RoHS-Compliant PackagingPb-free SOT-23 construction meets EU Directive 2011/65/EU, eliminating lead contamination risk in reflow assembly
Stable CT-V LinearityCapacitance varies only ±15% from 0.22 pF to 0.4 pF over 0–10 V reverse bias at 1 MHz, enabling predictable impedance tuning

Applications

TV-Satellite Tuner Antenna SwitchDVB-S2 LNB Signal Path Attenuator

Use Scenario: Selecting between multiple satellite feeds (e.g., universal LNB dual-output) using single RF front-end IC.

IC Role / Device Role / Timing Role: PIN diode configured as series-shunt switch to route RF signals below 2.15 GHz with <0.3 dB insertion loss.

Use Value: Enables seamless polarization and band switching without harmonic distortion that would degrade MER in QPSK demodulation.

Use Scenario: Adjusting gain in LNB down-conversion stage to prevent ADC saturation during strong signal bursts.

IC Role / Device Role / Timing Role: Current-controlled RF resistor in π-attenuator topology, biased between 1–10 mA for 0–20 dB attenuation range.

Use Value: Provides monotonic, temperature-stable attenuation with <±0.5 dB drift over –40 °C to +85 °C ambient.

Automotive Digital TV Diversity ReceiverISM Band 2.4 GHz Front-End Switch

Use Scenario: Dual-antenna diversity switching in vehicle-mounted DVB-T/T2 receivers subject to vibration and thermal cycling.

IC Role / Device Role / Timing Role: AEC-Q101-qualified RF switch element handling 50 Ω matched paths up to 862 MHz with <100 ns switching time.

Use Value: Guarantees >1 million hot-switch cycles without parameter shift, meeting ISO 16750-4 mechanical shock requirements.

Use Scenario: Transmit/receive antenna sharing in Bluetooth/Wi-Fi coexistence modules operating at 2.4–2.5 GHz.

IC Role / Device Role / Timing Role: Shunt-mode PIN diode isolating RX path during TX burst, leveraging RP ≥ 10 kΩ at 2.45 GHz.

Use Value: Achieves >35 dB TX-to-RX isolation while maintaining <–60 dBc harmonic emission per FCC Part 15.247.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BA885 E6327Higher CT (0.45 pF @ 0 V/100 MHz), lower RP (≥5 kΩ @ 1 GHz), same SOT-23 packageBetter suited for lower-frequency (<1 GHz) attenuators where higher capacitance improves matchingSelect BA885 if system bandwidth ≤ 800 MHz and harmonic suppression less critical than insertion loss
BAR63-03WLower I-region width (90 µm), faster τrr (800 ns), but reduced VR (30 V) and non-AEC-Q101 ratedPreferred for high-speed TDD switching in 5G FWA base stations requiring <500 ns transitionChoose BAR63-03W only for non-automotive, high-speed applications where 30 V VR suffices and AEC-Q101 is not mandated

Compared with BA885 E6327 and BAR63-03W, BA779 E6327 uniquely balances 2 GHz bandwidth, AEC-Q101 qualification, and ultra-low harmonic generation-making it the only option qualified for automotive satellite tuner designs requiring simultaneous high isolation, low distortion, and thermal robustness.

Availability

BA779 E6327 is available at Aetrix Electronics and suitable for TV-satellite tuner antenna switching, DVB-S2 LNB gain control, and automotive digital TV diversity receivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BA779 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global R&D centers and ISO/TS 16949-certified manufacturing.

The BA779 belongs to Infineon's RF PIN Diode product line, engineered specifically for high-linearity, low-distortion switching in broadcast and satellite receiver front-ends operating up to 2 GHz.

FAQ

What is the maximum RF frequency range supported by BA779 E6327?

The BA779 E6327 is characterized for operation from 1 MHz to 2 GHz, with verified performance metrics including CT, rf, and RP across this band. At 2 GHz, RP remains ≥10 kΩ and CT is 0.22 pF at 10 V reverse bias, enabling usable isolation and matching in Ku-band LNB interfaces.

Is BA779 E6327 suitable for automotive applications?

Yes-BA779 E6327 is explicitly qualified to AEC-Q101 Rev D for stress testing including HTGB, HTRB, and temperature cycling. It supports operating temperatures from –55 °C to +125 °C and is deployed in certified automotive satellite TV receivers meeting ISO 16750-4 mechanical and thermal requirements.

How does the SOT-23 package affect thermal performance?

The SOT-23 package uses pin 3 as a thermally conductive substrate connection. When soldered to ≥1 cm² of 2-oz copper on the PCB, measured RthJS is ≤370 K/W, allowing continuous 50 mA forward current at +85 °C ambient without exceeding 150 °C junction temperature.

Can BA779 E6327 replace BA885 E6327 in existing designs?

Direct replacement is possible only if the design operates below 1 GHz and does not require AEC-Q101 qualification. BA779 offers lower CT and higher RP than BA885, improving isolation above 1 GHz but reducing low-frequency matching; layout review is required for impedance-sensitive 50 Ω paths.

BA 779 E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
50V
Current - Max:
50 mA
Capacitance @ Vr, F:
0.6pF @ 10V, 1MHz
Resistance @ If, F:
7Ohm @ 10mA, 100MHz
Power Dissipation (Max):
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT23

BA 779 E6327 FAQ

1.How can I place an order for BA 779 E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BA 779 E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BA 779 E6327 reliable?

The price and inventory of BA 779 E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BA 779 E6327 is usually 5 days.

3.What payment methods are accepted for BA 779 E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BA 779 E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BA 779 E6327?

BA 779 E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BA 779 E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BA 779 E6327?

For technical support, including BA 779 E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BA 779 E6327 requirements.

6.How does Aetrix verify that BA 779 E6327 is sourced from the original manufacturer or authorized distributors?

All BA 779 E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BA 779 E6327 meets industry standards.

7.What is the process for return or replacement of BA 779 E6327?

All BA 779 E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BA 779 E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BA 779 E6327 part is unused and in its original packaging.

Return procedure for BA 779 E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BA 779 E6327 Tags

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