Infineon Technologies BA885E6327HTSA1

Overview

BA885E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in antenna tuning circuits, featuring 50 V reverse voltage rating, 50 mA forward current capability, 0.26 pF capacitance at 100 MHz (VR = 0 V), 22 Ω forward resistance at 100 MHz/1.5 mA, and AEC-Q101 qualification for automotive-grade reliability - deployed in satellite TV tuner front-ends.

For engineers reviewing the BA885E6327HTSA1 datasheet, BA885E6327HTSA1 pinout, BA885E6327HTSA1 application, or BA885E6327HTSA1 equivalent, key selection criteria include RF insertion loss at 1 GHz, harmonic distortion performance, thermal resistance (RthJS ≤ 95 K/W), and SCD80 package compatibility with high-frequency PCB layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor, leveraging its intrinsic I-region width (130 µm) to achieve low charge carrier lifetime (1600 ns) and minimal harmonic generation. Its capacitance-voltage profile (CT = 0.26–0.4 pF over 0–30 V at 100 MHz) enables precise impedance control in broadband switching paths.

The device uses a single-anode, single-cathode configuration in the SCD80 surface-mount package, with thermal design centered on junction-to-soldering-point resistance (≤95 K/W) to sustain operation from –55 °C to +125 °C ambient while maintaining <20 nA reverse leakage at 30 V.

Key Specifications

Pinout & Package

BA885E6327HTSA1 is housed in the SCD80 package: 1.7 mm × 0.8 mm × 0.7 mm body with gull-wing leads, cathode marked by laser etching on terminal 2, and RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR63-02W and BA595E6327HTSA1, BA885E6327HTSA1 delivers superior 2 GHz bandwidth, lower thermal resistance, and automotive qualification - making it optimal for next-generation satellite tuners requiring both high-frequency agility and long-term reliability.

Availability

BA885E6327HTSA1 is available at Aetrix Electronics and suitable for satellite TV tuners, automotive digital radio receivers, UHF RFID readers, and industrial wireless sensor nodes requiring stable component supply across extended temperature ranges and high-reliability production cycles.

Supply support for BA885E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification aligned to ISO/TS 16949.

BA885E6327HTSA1 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for broadband RF switching and attenuation in consumer and automotive tuner applications demanding low distortion and AEC-Q101 compliance.

FAQ

What is the maximum operating frequency for BA885E6327HTSA1 in RF switching mode?

The BA885E6327HTSA1 is characterized up to 2 GHz with verified insertion loss and isolation performance. Its 0.26 pF capacitance and 22 Ω forward resistance at 100 MHz scale predictably to 2 GHz, and application notes confirm stable operation in satellite tuner front-ends across the full 950–2150 MHz L-band range.

Is BA885E6327HTSA1 compatible with lead-free reflow soldering profiles?

Yes - BA885E6327HTSA1 uses matte tin-plated terminals and is qualified for standard JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C for 10 seconds. The SCD80 package's thermal mass and RthJS ≤95 K/W ensure reliable joint formation without die cracking or delamination.

How does the 130 µm I-region width affect switching speed and linearity?

The 130 µm I-region directly determines the 1600 ns charge carrier lifetime, balancing switching speed and RF linearity. It enables <10 ns turn-on delay under 10 mA bias while suppressing third-order intermodulation distortion below –45 dBc in 2-tone tests at 1 GHz - critical for multi-channel TV tuner coexistence.

Can BA885E6327HTSA1 replace BA595E6327HTSA1 on existing PCBs?

Yes - both share identical SCD80 footprint, pinout, and marking orientation. However, BA885's lower series inductance (0.8 nH vs. 1.8 nH) improves high-frequency response above 1 GHz, so replacement enhances bandwidth but requires verification of bias network stability at harmonics beyond 1.5 GHz.