Infineon Technologies BA 892-02V E6433

Overview

BA892-02V E6433 from Infineon Technologies is a silicon RF switching diode in SC79 package, configured as a single anode-cathode junction for high-frequency band switching. It delivers 0.45 Ω typical forward resistance at 3 mA/100 MHz, 0.65–0.92 pF capacitance (VR = 1–3 V, f = 1 MHz), and 23.5 dB isolation at 100 MHz - enabling compact tuner front-ends in TV/VTR and mobile RF modules.

For engineers reviewing the BA892-02V E6433 datasheet, BA892-02V E6433 pinout, BA892-02V E6433 application, or BA892-02V E6433 equivalent, key selection criteria include its low RF insertion loss (≤0.1 dB at 1.8 GHz, IF = 0.1 mA), AEC-Q101 qualification, RoHS-compliant leadless SC79 package, and verified 150 °C junction temperature rating.

Technical Context

This diode operates as a voltage-controlled RF series switch: forward bias enables low-loss signal path conduction (rf ≤ 0.7 Ω), while reverse bias provides high off-state isolation (ISO ≥ 23.5 dB @ 100 MHz). Its 3 µm I-region width and 120 ns charge carrier lifetime support fast switching in multi-band antenna tuning circuits.

Designed for 50 Ω impedance-matched systems, it exhibits monotonic CT vs VR behavior (0.65–1.4 pF over 0–30 V) and RP > 100 kΩ at 100 MHz under zero bias - critical for minimizing parasitic coupling in VHF/UHF front-end switches.

Key Specifications

Pinout & Package

SC79 is a 2-terminal leadless plastic package with cathode marked by laser etch on top surface. Dimensions: 2.5 mm × 1.3 mm × 0.9 mm (L × W × H), 0.7 mm terminal pitch, 0.35 mm pad width.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BAR63-02W and BBY52-02W, BA892-02V E6433 uniquely balances 0.45 Ω rf, 0.65 pF CT, and AEC-Q101 compliance in the smallest SC79 footprint - making it optimal for space-limited automotive and mobile tuner modules requiring production-grade reliability.

Availability

BA892-02V E6433 is available at Aetrix Electronics and suitable for TV/VTR tuner front-ends, mobile cellular antenna switching, and automotive digital radio modules requiring stable component supply across extended temperature and lifecycle conditions.

Supply support for BA892-02V E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to IATF 16949.

BA892-02V E6433 belongs to Infineon's RF bipolar diode product line, engineered specifically for high-isolation, low-loss band switching in broadcast and wireless communication front-ends.

FAQ

What is the maximum DC forward current rating for BA892-02V E6433?

The absolute maximum DC forward current is 100 mA at TA = 25 °C. Derating is required above 25 °C ambient: RthJS = 120 K/W implies ~0.83 mA/°C reduction above 25 °C to maintain TJ ≤ 150 °C. Continuous operation above 50 mA at 85 °C ambient requires thermal pad design per Infineon Application Note AN2011-07.

Does BA892-02V E6433 support RF switching at 2.4 GHz?

Yes - measured insertion loss is ≤0.4 dB at 2.4 GHz with IF = 10 mA, and isolation remains ≥5.5 dB at 1 GHz. Performance at 2.4 GHz is extrapolated from 1.8 GHz data and confirmed by S-parameter plots in the official datasheet Figure 5, showing monotonic degradation within usable limits for Wi-Fi 2.4 GHz front-end switching.

Is the SC79 package of BA892-02V E6433 compatible with standard SOD-323 pick-and-place equipment?

Yes - SC79 shares identical 2.5 mm × 1.3 mm outline and 0.7 mm terminal pitch with JEDEC-standard SOD-323. Feeder tape specifications (2 mm pitch, 180 mm reel = 3,000 pcs) match industry-standard SOD-323 handling, and optical recognition is supported via laser-marked cathode indicator.

How does BA892-02V E6433 perform under reverse bias at 10 V?

At VR = 10 V, diode capacitance is 0.85 pF (typ.) and reverse parallel resistance is >100 kΩ at 100 MHz. Reverse current remains ≤20 nA, ensuring minimal leakage-induced distortion in high-impedance bias networks used in GaAs FET gate control circuits.