Infineon Technologies BA89202VH6327XTSA1

Overview

BA89202VH6327XTSA1 from Infineon Technologies is a silicon RF switching diode in SC79 package, configured as a single anode-cathode junction for high-frequency band switching. It delivers 0.45 Ω typical forward resistance at 3 mA/100 MHz, 0.65–1.4 pF capacitance (1 MHz–100 MHz), and 23.5 dB isolation at 100 MHz - enabling use in TV/VTR tuner front-ends and mobile RF path selection.

For engineers reviewing the BA89202VH6327XTSA1 datasheet, BA89202VH6327XTSA1 pinout, BA89202VH6327XTSA1 application, or BA89202VH6327XTSA1 equivalent, key selection criteria include RF insertion loss (<0.5 dB at 1.8 GHz), reverse voltage rating (35 V), junction temperature limit (150 °C), and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This diode operates as a voltage-controlled RF series switch: forward bias enables low-loss signal conduction (rf ≤ 0.7 Ω), while reverse bias provides high isolation (>23 dB up to 100 MHz) via low capacitance (CT ≤ 1.4 pF) and high reverse parallel resistance (RP ≥ 100 kΩ at 100 MHz). Its 120 ns charge carrier lifetime supports fast switching in tuner AGC and antenna diversity circuits.

The SC79 package's 0.7 mm × 1.3 mm footprint and 0.35 mm height enable dense RF layout; thermal resistance RthJS ≤ 120 K/W ensures stable operation under 100 mA pulsed forward current at TJ = 150 °C in compact tuner modules.

Key Specifications

Pinout & Package

BA89202VH6327XTSA1 uses the SC79 (SOD-323 variant) surface-mount package: 0.7 mm × 1.3 mm body, 0.35 mm height, cathode marked by laser dot on top surface. Two terminals only: Anode (Pin 1) and Cathode (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BAR63-02W and BAV99,115, BA89202VH6327XTSA1 uniquely balances 23.5 dB isolation at 100 MHz, AEC-Q101 compliance, and 0.45 Ω rf - making it optimal for automotive and broadcast tuner designs requiring robust RF performance and reliability.

Availability

BA89202VH6327XTSA1 is available at Aetrix Electronics and suitable for TV tuner front-ends, automotive DAB+ radio modules, and mobile LTE antenna switching requiring stable component supply and full traceability.

Supply support for BA89202VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to IATF 16949.

BA89202VH6327XTSA1 belongs to Infineon's RF Silicon Diode product line, engineered specifically for high-isolation, low-loss band switching in broadcast and mobile communication tuner systems.

FAQ

What is the maximum RF frequency range supported by BA89202VH6327XTSA1?

BA89202VH6327XTSA1 is characterized up to 2.15 GHz, with insertion loss <0.5 dB at 1.8 GHz and isolation >5.5 dB at 1 GHz. Its 0.65–1.4 pF capacitance and 120 ns τrr support reliable operation in DVB-T, LTE, and DAB+ bands, though full S-parameter data is specified only to 2 GHz in the official datasheet.

Does BA89202VH6327XTSA1 require external bias circuitry?

Yes - it requires a DC bias network to set forward/reverse states. A typical design uses a 10 kΩ resistor to apply ~3 mA forward current for low-rf conduction, and a 100 kΩ pull-down to ensure full reverse bias (VR ≥ 20 V) for high isolation. No integrated driver or logic interface is included.

Can BA89202VH6327XTSA1 be used in parallel configurations?

No - BA89202VH6327XTSA1 is a single-junction diode optimized for series-switch topology. Parallel use would cause current imbalance due to parameter spread (e.g., VF mismatch), leading to thermal runaway. For higher current handling, select a diode rated for ≥200 mA IF or use discrete current-sharing resistors.

Is the SC79 package compatible with standard reflow soldering profiles?

Yes - BA89202VH6327XTSA1's SC79 package is qualified for Pb-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C (≤ 30 sec). Its 0.35 mm profile and thermal resistance RthJS ≤ 120 K/W allow uniform heating on standard 6-zone reflow ovens without tombstoning or delamination.