Infineon Technologies BA89202VH6433XTMA1

Overview

BA89202VH6433XTMA1 from ROHM Semiconductor is a silicon RF switching diode in SC79 package, configured as a single anode-cathode device for band switching in TV/VTR tuners and mobile RF front-ends. It delivers 0.45 Ω typical forward resistance at 3 mA/100 MHz, 0.65–1.4 pF capacitance (1 MHz–100 MHz), and 23.5 dB isolation at 100 MHz under 0 V bias.

For engineers reviewing the BA89202VH6433XTMA1 datasheet, BA89202VH6433XTMA1 pinout, BA89202VH6433XTMA1 application, or BA89202VH6433XTMA1 equivalent, key selection criteria include RF insertion loss (<0.5 dB at 1.8 GHz), reverse voltage rating (35 V), junction temperature limit (150 °C), and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This diode operates as a voltage-controlled RF series switch: low forward resistance enables minimal signal attenuation during ON-state conduction, while low capacitance and high reverse parallel resistance (>100 kΩ at 100 MHz) ensure strong OFF-state isolation. Its 120 ns charge carrier lifetime supports fast switching in multi-band antenna tuning circuits.

The device uses a planar epitaxial structure with 3 µm I-region width to balance low rf and low CT. Thermal resistance from junction to soldering point is ≤120 K/W, enabling reliable operation up to 125 °C ambient in compact tuner PCB layouts.

Key Specifications

Pinout & Package

SC79 package: ultra-small surface-mount plastic case (1.3 × 0.7 × 0.5 mm), cathode-marked, lead-free, RoHS-compliant. Designed for high-density RF layout with minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BA892-02L and BAR63-02W, BA89202VH6433XTMA1 uniquely balances AEC-Q101 compliance, 35 V VR headroom, and 0.45 Ω rf in SC79 - making it optimal for automotive and industrial tuner modules requiring robustness and 1–2 GHz performance.

Availability

BA89202VH6433XTMA1 is available at Aetrix Electronics and suitable for digital TV tuners, automotive infotainment systems, and mobile RF front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BA89202VH6433XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer electronics.

BA89202VH6433XTMA1 belongs to ROHM's high-frequency switching diode product line, engineered specifically for band selection and antenna tuning in broadcast and wireless receiver systems.

FAQ

What is the maximum RF frequency this diode supports in practical switching applications?

BA89202VH6433XTMA1 maintains usable RF performance up to 2 GHz, evidenced by measured insertion loss of 0.4 dB at 1.8 GHz (IF = 10 mA) and isolation of 5.5 dB at 1 GHz. Above 2 GHz, rising capacitance and package parasitics degrade isolation and increase loss beyond typical system requirements.

Does this diode require external bias circuitry for RF switching operation?

Yes - it requires a DC bias network to apply forward current (typically 3–10 mA) for ON-state conduction or reverse voltage (≤35 V) for OFF-state isolation. A series resistor and blocking capacitor are standard; no integrated driver or logic interface is included.

Can BA89202VH6433XTMA1 be used in parallel configurations for higher current handling?

No - parallel operation is not recommended due to mismatched forward voltage characteristics and thermal runaway risk. The device is rated for 100 mA absolute maximum forward current; higher currents require discrete current-sharing design or alternative devices.

How does the SC79 package affect thermal performance in high-density RF layouts?

The SC79 package achieves ≤120 K/W junction-to-soldering-point thermal resistance, enabling effective heat dissipation through copper pour and thermal vias. Its 0.5 mm profile minimizes RF parasitic inductance but requires careful pad design to avoid solder wicking and voiding during reflow.