Infineon Technologies BA 892 E6127

Overview

BA892 E6127 from ROHM Semiconductor is a silicon RF switching diode in SC79 package, configured as a single anode-cathode junction for high-frequency signal path control. It delivers 0.45 Ω typical forward resistance at 3 mA/100 MHz, 0.65–1.4 pF capacitance (1 MHz–100 MHz), and 23.5 dB isolation at 100 MHz - enabling band switching in TV/VTR tuners and mobile RF front-ends.

For engineers reviewing the BA892 E6127 datasheet, BA892 E6127 pinout, BA892 E6127 application, or BA892 E6127 equivalent, key selection criteria include RF insertion loss (≤0.5 dB at 1.8 GHz, 3 mA), reverse voltage rating (35 V), junction temperature limit (150 °C), and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This diode operates as a voltage-controlled RF switch: forward bias enables low-loss signal conduction (rf ≤ 0.7 Ω @ 100 MHz), while reverse bias provides high isolation (>23 dB @ 100 MHz) via low capacitance (CT ≤ 1.4 pF) and high reverse parallel resistance (RP ≥ 100 kΩ @ 100 MHz).

Its 120 ns charge carrier lifetime (τ_rr) and 3 µm I-region width support fast switching in multi-band antenna tuning circuits; the SC79 package ensures thermal resistance R_thJS ≤ 120 K/W for stable operation up to 125 °C ambient.

Key Specifications

Pinout & Package

BA892 E6127 uses the SC79 surface-mount package (1.3 mm × 0.7 mm × 0.5 mm), featuring a single anode and cathode terminal on opposite ends of the die. Cathode is marked by a visible bar on the package top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BAR63-02W and BAV99,115, BA892 E6127 uniquely balances low r_f, moderate C_T, and AEC-Q101 compliance - making it optimal for space-constrained, thermally demanding automotive and consumer tuner modules requiring <0.5 dB loss and >20 dB isolation below 1 GHz.

Availability

BA892 E6127 is available at Aetrix Electronics and suitable for TV tuner band switching, mobile antenna tuning, automotive DAB radio, and VTR RF front-end applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BA892 E6127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.

BA892 belongs to ROHM's RF switching diode product line, engineered specifically for high-isolation, low-loss signal routing in broadcast and mobile communication tuners operating up to 2.6 GHz.

FAQ

What is the maximum RF frequency at which BA892 E6127 maintains usable isolation?

BA892 E6127 provides ≥5.5 dB isolation at 1 GHz under 0 V reverse bias, verified per datasheet Figure 5. Its isolation degrades above 1 GHz due to rising parasitic capacitance; for >1.5 GHz applications, BAR63-02W (0.35 pF) is preferred.

Can BA892 E6127 replace BA592 in existing designs?

Yes - BA892 E6127 shares identical SC79 package, pinout, and electrical specs with BA592, including 35 V V_R, 0.45 Ω r_f, and AEC-Q101 qualification. The BA892 designation reflects updated process and marking; no layout or firmware changes are needed.

Does BA892 E6127 require external bias circuitry for RF switching?

No - BA892 E6127 operates as a passive two-terminal device. Forward bias is applied directly via DC-blocking capacitor and RF choke; no active driver IC or level-shifting circuitry is required for standard series-switch configurations.

How does the 120 ns reverse recovery time affect switching speed in tuner applications?

The 120 ns τ_rr limits minimum switching period to ~1 MHz, sufficient for broadcast channel scanning (typically <100 kHz). It does not constrain real-time LTE/5G antenna tuning, which relies on slower baseband-controlled DC bias rather than diode recovery timing.