Infineon Technologies BA 892 E6327

Overview

BA892 E6327 from Infineon Technologies is a silicon RF switching diode in SC79 package, configured as a single anode-cathode junction for high-frequency band switching. It delivers 0.45 Ω forward resistance at 3 mA/100 MHz, 0.65–1.4 pF capacitance (1 MHz–100 MHz), and 23.5 dB isolation at 100 MHz - enabling compact tuner front-ends in mobile TV receivers.

For engineers reviewing the BA892 E6327 datasheet, BA892 E6327 pinout, BA892 E6327 application, or BA892 E6327 equivalent, key selection criteria include RF insertion loss (<0.1 dB @ 1.8 GHz, IF=0.1 mA), reverse voltage rating (35 V), junction temperature limit (150 °C), and AEC-Q101 qualification for automotive tuner modules.

Technical Context

This diode operates as a voltage-controlled RF series switch in tunable filter and antenna path selection circuits. Its low charge carrier lifetime (120 ns) and narrow I-region width (3 µm) support fast switching with minimal distortion in UHF/VHF bands up to 1 GHz.

The device uses a planar epitaxial structure optimized for low-series resistance and controlled junction capacitance. Reverse parallel resistance exceeds 100 kΩ at 100 MHz, ensuring high off-state impedance and signal integrity in 50 Ω RF systems.

Key Specifications

Pinout & Package

SC79 package: ultra-small surface-mount plastic case (1.3 × 0.7 × 0.5 mm), cathode-marked, single-diode configuration with two terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switching diode applications.

Compared with BAR63-02W and SMV1232-011, BA892 E6327 offers optimal balance of low insertion loss, moderate capacitance, and AEC-Q101 qualification - making it the preferred choice for cost-sensitive, thermally constrained automotive and consumer tuner designs below 1 GHz.

Availability

BA892 E6327 is available at Aetrix Electronics and suitable for mobile TV tuners, automotive DAB+ receivers, UHF RFID readers, and ISM-band wireless sensor nodes requiring stable component supply across extended temperature ranges.

Supply support for BA892 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in silicon RF diodes and GaN power devices.

The BA892 belongs to Infineon's high-frequency discrete diode product line, engineered specifically for low-loss, high-isolation RF switching in broadcast and wireless infrastructure applications.

FAQ

What is the maximum RF frequency at which BA892 E6327 maintains usable isolation?

BA892 E6327 delivers ≥5.5 dB isolation up to 1 GHz (measured at VR = 0 V), with 10.5 dB at 470 MHz and 23.5 dB at 100 MHz. Performance degrades above 1.2 GHz due to parasitic inductance; it is not characterized beyond 2 GHz in official documentation.

Can BA892 E6327 be used in series-shunt RF switch configurations?

Yes - its single-diode SC79 configuration supports both series and shunt topologies. Data sheet Figure 5 shows BA892-02L (identical die) in series configuration with Z₀ = 50 Ω; shunt use requires external DC blocking and proper ground layout to maintain isolation.

Does BA892 E6327 require external bias circuitry for RF switching?

Yes - it requires a DC bias path to forward-bias the junction (≥0.7 V) for low-resistance conduction. Typical implementation uses a series resistor (1–10 kΩ) and RF choke to separate DC control from AC signal path while preserving 50 Ω impedance.

Is the SC79 package compatible with standard reflow profiles for lead-free assembly?

Yes - the SC79 package is RoHS-compliant and qualified for Pb-free reflow per J-STD-020. Peak temperature must not exceed 260 °C for ≤30 seconds; recommended profile includes ramp rate ≤3 °C/s and time above liquidus 60–90 s.