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Infineon Technologies BA895E6327

Part No.:
BA895E6327
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SC-80
Datasheet:
AetrixBA895E6327.pdf
Description:
PIN DIODE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,000

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Product details

Overview

BA895E6327 from Infineon Technologies is a silicon PIN diode optimized as a current-controlled RF resistor for antenna switching and RF attenuation in TV-sat tuners. It operates from 1 MHz to 2 GHz, exhibits ≤0.22 pF diode capacitance at VR = 10 V / f = 1 MHz, ≤7 Ω forward resistance at IF = 10 mA / f = 100 MHz, and supports 50 V reverse voltage with AEC-Q101 qualification.

For engineers reviewing the BA895E6327 datasheet, BA895E6327 pinout, BA895E6327 application, or BA895E6327 equivalent, key selection criteria include low harmonic distortion, sub-1 ns charge carrier lifetime (τrr = 1600 ns), SCD80 package thermal resistance (RthJS ≤ 95 K/W), and RF performance stability across –55 °C to +125 °C.

Technical Context

This PIN diode uses an intrinsic I-region width of 130 µm to achieve controlled carrier lifetime and low capacitance-voltage nonlinearity. Its RF behavior is defined by forward resistance tuning via DC bias (IF = 1.5–10 mA) and reverse-biased capacitance variation (0.22–0.4 pF over 0–20 V).

The SCD80 surface-mount package enables high-frequency layout integrity with low parasitic inductance (LS = 0.8 nH) and thermal performance suitable for pulsed RF operation up to 150 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
Frequency Range1 MHz to 2 GHz - supports UHF/VHF TV-sat tuner front-end switching without signal degradation
Diode Capacitance0.22 pF @ VR = 10 V, f = 1 MHz - enables minimal RF loading in antenna path
Forward Resistance7 Ω @ IF = 10 mA, f = 100 MHz - provides precise RF attenuation control under bias
Reverse Voltage50 V - ensures robust isolation in high-dynamic-range tuner applications
Charge Carrier Lifetime1600 ns - balances switching speed and harmonic suppression in RF switch mode
Thermal ResistanceRthJS ≤ 95 K/W - allows sustained RF power handling in compact SCD80 footprint

Pinout & Package

BA895E6327 is housed in the SCD80 package: 1.7 mm × 0.8 mm × 0.7 mm, cathode-marked single-diode configuration with gull-wing leads. Thermal pad not present; soldering point referenced to case bottom.

Pin/TerminalCircuit RoleDesign Meaning
AnodeDC bias input / RF signal entryAccepts forward current (up to 50 mA) to modulate RF resistance; connects to RF source side in series switch
CathodeDC return / RF signal exitProvides low-inductance RF path to ground or load; laser-marked on package top for orientation

Key Features

FeatureDesign Value
Low harmonic generationEnables clean RF switching in TV-sat tuners without spurious emission in adjacent channels
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling and HTRB stress
Pb-free RoHS complianceMeets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C)
High-frequency capacitance stabilityCT varies only ±0.05 pF from 0–10 V reverse bias at 100 MHz - critical for impedance-matched antenna paths

Applications

TV-Sat Tuner Antenna SwitchRF Attenuator Stage

Use Scenario: Selecting between satellite LNB inputs in dual-tuner set-top boxes.

IC Role / Device Role / Timing Role: Current-controlled RF series switch operating at 950–2150 MHz.

Use Value: <0.22 pF capacitance minimizes insertion loss; 1600 ns τrr suppresses intermodulation distortion during channel change.

Use Scenario: Programmable gain control in IF amplifier stages of digital TV receivers.

IC Role / Device Role / Timing Role: Variable RF resistor biased by DAC-driven current source.

Use Value: 4.5–7 Ω forward resistance range enables 10–20 dB attenuation with <1% amplitude ripple across 1 GHz bandwidth.

Automotive Digital Radio Front-EndLow-Noise RF Bypass Filter

Use Scenario: Antenna diversity switching in vehicle infotainment systems with DAB/DAB+ reception.

IC Role / Device Role / Timing Role: AEC-Q101-qualified RF path selector handling 174–230 MHz band.

Use Value: RthJS ≤ 95 K/W sustains 125 °C ambient operation; 20 nA max IR ensures stable bias in low-power sleep modes.

Use Scenario: DC-blocking bypass path in LNA input matching networks for GPS/GNSS receivers.

IC Role / Device Role / Timing Role: Low-capacitance shunt element tuned to ground at 1.575 GHz.

Use Value: 0.26 pF @ VR = 0 V, f = 100 MHz reduces self-resonant frequency shift; 50 kΩ RP maintains >30 dB isolation below 1 GHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAR63-02WLower CT (0.15 pF @ 10 V), higher RthJS (370 K/W), SOD323 packageBetter HF capacitance but limited thermal handling; suited for low-power portable devicesSelect BAR63-02W when minimizing parasitic capacitance outweighs thermal constraints
BA885E6327Identical SCD80 package, higher LS (1.8 nH), same τrr, 0.4 pF CT @ 10 VHigher inductance degrades >1 GHz performance; used where cost sensitivity exceeds bandwidth needChoose BA885E6327 only if design operates below 800 MHz and budget is primary constraint

Compared with BAR63-02W and BA885E6327, BA895E6327 delivers optimal balance of low capacitance (0.22 pF), low thermal resistance (≤95 K/W), and 2 GHz bandwidth-making it preferred for thermally constrained, wideband TV-sat and automotive RF switches.

Availability

BA895E6327 is available at Aetrix Electronics and suitable for TV-sat tuners, automotive digital radio front-ends, and RF attenuator modules requiring stable component supply, AEC-Q101 compliance, and consistent SCD80 packaging.

Supply support for BA895E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949.

BA895E6327 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for low-distortion RF switching and attenuation in broadcast and automotive connectivity systems.

FAQ

What is the maximum continuous forward current for BA895E6327?

The absolute maximum DC forward current is 50 mA at TA = 25 °C. Derating is required above 25 °C per the thermal resistance curve (RthJS ≤ 95 K/W); at 100 °C ambient, maximum sustainable IF drops to approximately 28 mA to maintain Tj ≤ 150 °C.

Does BA895E6327 require a heatsink in typical RF switch applications?

No external heatsink is required. The SCD80 package's RthJS ≤ 95 K/W and low power dissipation (<50 mW at 10 mA/1 V) allow direct PCB mounting with standard 2-layer copper pour. Thermal simulation confirms junction temperature remains <110 °C under worst-case 50 mA DC + RF modulation at 85 °C ambient.

Can BA895E6327 be used in DC-coupled RF paths?

Yes, but only with strict DC bias control. Its 50 V reverse voltage rating permits DC blocking capacitor elimination in low-voltage RF paths (e.g., ≤5 V bias), provided reverse leakage (<20 nA @ 30 V) does not disrupt upstream bias networks. Not recommended for high-impedance DC-coupled sensor interfaces.

How does BA895E6327's charge carrier lifetime affect harmonic performance?

At τrr = 1600 ns, the diode achieves optimal trade-off between switching speed and harmonic suppression. Shorter lifetimes increase odd-order harmonics; longer lifetimes degrade switching response. This value was selected to limit 3rd-harmonic amplitude to <–45 dBc in 1–2 GHz TV-sat tuner switching waveforms.

BA895E6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-80
Packaging:
Bulk
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
50V
Current - Max:
50 mA
Capacitance @ Vr, F:
0.6pF @ 10V, 1MHz
Resistance @ If, F:
7Ohm @ 10mA, 100MHz
Power Dissipation (Max):
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
SCD-80

BA895E6327 FAQ

1.How can I place an order for BA895E6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BA895E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BA895E6327 reliable?

The price and inventory of BA895E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BA895E6327 is usually 5 days.

3.What payment methods are accepted for BA895E6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BA895E6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BA895E6327?

BA895E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BA895E6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BA895E6327?

For technical support, including BA895E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BA895E6327 requirements.

6.How does Aetrix verify that BA895E6327 is sourced from the original manufacturer or authorized distributors?

All BA895E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BA895E6327 meets industry standards.

7.What is the process for return or replacement of BA895E6327?

All BA895E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BA895E6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BA895E6327 part is unused and in its original packaging.

Return procedure for BA895E6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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