Infineon Technologies BA 895 E6327

Overview

BA 895 E6327 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation in TV-satellite tuners, featuring 50 V reverse voltage rating, 50 mA forward current capability, 0.22 pF capacitance at 10 V/1 MHz, 4.5 Ω forward resistance at 10 mA/100 MHz, and SCD80 surface-mount package.

For engineers reviewing the BA 895 E6327 datasheet, BA 895 E6327 pinout, BA 895 E6327 application, or BA 895 E6327 equivalent, key selection criteria include low harmonic distortion, sub-2 GHz RF performance, thermal resistance ≤95 K/W, AEC-Q101 qualification, and RoHS-compliant packaging for automotive tuner modules.

Technical Context

This PIN diode operates as a current-controlled RF resistor, where forward bias modulates series resistance (rf) from ~4.5 Ω to ~22 Ω across 1.5–10 mA at 100 MHz, enabling precise RF signal path control. Its I-region width of 130 µm supports fast carrier lifetime (τ_rr = 1600 ns) and low capacitance variation with reverse voltage.

The device exhibits minimal capacitance drift (0.22–0.40 pF over 0–20 V at 1 MHz) and high reverse parallel resistance (>50 kΩ at 1 V/100 MHz), ensuring low insertion loss and high isolation in antenna switch configurations up to 2 GHz.

Key Specifications

Pinout & Package

BA 895 E6327 is housed in the SCD80 ultra-small surface-mount package (1.3 mm × 0.7 mm × 0.35 mm), featuring a single anode-cathode configuration with cathode marked by laser etching on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Compared with BAR63-02W and MA4P7472F, BA 895 E6327 uniquely balances ultra-low capacitance, AEC-Q101 qualification, and SCD80 miniaturization-making it optimal for space-constrained, high-frequency automotive and broadcast tuner designs where harmonic suppression and thermal efficiency are critical.

Availability

BA 895 E6327 is available at Aetrix Electronics and suitable for TV-satellite tuners, automotive digital radio front-ends, and ISM-band transceiver T/R switches requiring stable component supply and AEC-Q101 traceability.

Supply support for BA 895 E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

BA 895 E6327 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for low-distortion RF switching and attenuation in broadcast, satellite, and automotive connectivity systems.

FAQ

What is the maximum RF frequency range supported by BA 895 E6327?

BA 895 E6327 is characterized for operation from 1 MHz to 2 GHz, with verified performance metrics including capacitance, resistance, and harmonic distortion within this band. Its 0.22 pF capacitance at 10 V and 4.5 Ω forward resistance at 100 MHz enable stable impedance matching up to 1.8 GHz in practical tuner layouts.

Is BA 895 E6327 suitable for automotive applications?

Yes-BA 895 E6327 is qualified to AEC-Q101 Rev D, covering stress tests including HTGB, HTRB, temperature cycling, and ESD (HBM ≥2 kV). It operates across -55°C to +125°C ambient and supports automotive tuner and digital radio modules requiring long-term reliability under vibration and thermal cycling.

How does the SCD80 package compare to SOD-323 in size and thermal performance?

SCD80 measures 1.3 mm × 0.7 mm × 0.35 mm, ~30% smaller than SOD-323 (1.7 mm × 1.25 mm × 0.95 mm), and achieves R_thJS ≤95 K/W versus ~370 K/W for SOD-323 variants. This enables tighter layout density and better thermal coupling to PCB copper in high-density tuner modules.

Can BA 895 E6327 replace BA 885 in existing designs?

Yes-with caution: BA 895 has lower inductance (0.8 nH vs. 1.8 nH), lower C_T (0.22 pF vs. 0.26 pF), and higher thermal resistance tolerance (≤95 K/W vs. ≤370 K/W), making it superior for >1 GHz applications. Layout adjustments may be needed to accommodate its smaller SCD80 footprint and revised parasitic profile.