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Vishay General Semiconductor - Diodes Division BAQ133-GS18

Part No.:
BAQ133-GS18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
SOD-80 Variant
Datasheet:
AetrixBAQ133-GS18.pdf
Description:
DIODE GP 30V 200MA SOD80
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,398

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Product details

Overview

BAQ133-GS18 from Vishay Semiconductors is a silicon planar small-signal switching diode in QuadroMELF (SOD-80) package, rated for 40 V repetitive peak reverse voltage (VRRM), 200 mA forward current (IF), and exhibiting ultra-low reverse leakage of ≤1 nA at 30 V and 25 °C. It serves in precision protection and analog signal conditioning circuits where low leakage and stable junction capacitance are critical.

For engineers reviewing the BAQ133-GS18 datasheet, BAQ133-GS18 pinout, BAQ133-GS18 application, or BAQ133-GS18 equivalent, this page delivers verified electrical specs, thermal behavior, mechanical footprint, and real-world use context - all tied explicitly to the BAQ133-GS18 ordering variant with GS18 tape-and-reel packaging (10K/reel, 8 mm tape).

Technical Context

The BAQ133-GS18 operates as a single discrete silicon planar junction diode optimized for low-leakage signal routing. Its 3 pF junction capacitance at 0 V and 1 MHz enables stable high-frequency response in timing and logarithmic amplifier topologies, while its 500 K/W thermal resistance (on 50 mm × 50 mm × 1.6 mm PCB) defines power derating limits under sustained conduction.

Designed for ambient temperatures from –65 °C to +175 °C and junction temperatures up to 175 °C, the device supports operation in thermally demanding industrial environments. Its black cathode band and glass-encapsulated QuadroMELF construction ensure reliable polarity identification and hermetic robustness without epoxy-related moisture sensitivity.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum repetitive reverse voltage before breakdown; sets safe operating ceiling in clamp/protection circuits.
IF200 mA - Continuous forward current rating; determines max DC bias capability in signal path or bias networks.
IR @ 30 V, 25 °C≤1 nA - Ultra-low reverse leakage; preserves accuracy in high-impedance peak follower and log amp inputs.
CD @ 0 V, 1 MHz3 pF - Junction capacitance value; enables predictable AC response in RF detector and timing RC networks.
RthJA500 K/W - Thermal resistance to ambient on standard PCB; requires derating above ~80 mW dissipation at 25 °C ambient.
Tj max175 °C - Maximum allowable junction temperature; supports extended operation in sealed enclosures or high-ambient settings.

Pinout & Package

Package: QuadroMELF (SOD-80), glass-encapsulated cylindrical case with black cathode band; dimensions 3.7 mm × 1.6 mm (L × Ø), weight ≈34 mg; footprint requires 2 mm minimum pad spacing and R0.118 mm radius relief.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node in forward-biased operation; must tolerate 2 A surge (1 μs pulse) during transient events.
CathodeForward current exit / reverse blocking terminalIdentified by black band; sustains 40 V reverse bias continuously and defines clamping reference in protection circuits.

Key Features

FeatureDesign Value
Ultra-low reverse leakage≤1 nA at 30 V/25 °C - Enables use in >100 MΩ impedance nodes without signal drift in precision analog stages.
Silicon planar junctionStable, reproducible VF (1.0 V @ 100 mA) and low noise - Supports consistent forward conduction in logarithmic and exponential converter designs.
QuadroMELF (SOD-80) packageHermetically sealed glass body with defined thermal path - Eliminates moisture-induced parameter shift and supports reflow-compatible assembly.
Low junction capacitance3 pF at 0 V - Minimizes frequency-dependent phase error in RF detector and fast-switching timing applications.

Applications

Protection CircuitsTime Delay Circuits

Use Scenario: Input-stage ESD and overvoltage clamp in sensor front-ends or data acquisition modules.

IC Role / Device Role / Timing Role: Discrete clamping diode placed between signal line and rail, conducting only during fault conditions.

Use Value: 40 V VRRM and ≤1 nA leakage preserve signal integrity during normal operation while limiting transients to safe levels.

Use Scenario: RC-based delay generation in power-on reset or sequencer logic with microsecond-to-millisecond resolution.

IC Role / Device Role / Timing Role: Leakage-controlled discharge path across timing capacitor to set predictable delay slope.

Use Value: Sub-nA reverse current ensures minimal capacitor self-discharge, enabling accurate, temperature-stable delay timing.

Peak Follower CircuitsLogarithmic Amplifiers

Use Scenario: Tracking peak amplitude of low-level AC signals in instrumentation or audio envelope detection.

IC Role / Device Role / Timing Role: Precision rectifier element in feedback loop of op-amp-based peak detector.

Use Value: Low VF (1.0 V) and negligible leakage prevent droop and offset errors during hold phase.

Use Scenario: Transdiode configuration in analog computing or dynamic range compression circuits.

IC Role / Device Role / Timing Role: Current-to-voltage conversion element exploiting exponential I–V relationship of silicon junction.

Use Value: Stable planar junction characteristics and low noise support accurate log-domain transfer function over decades of input current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar small-signal switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAQ134-GS1870 V VRRM, same package and leakage specHigher reverse voltage rating suits 48 V system protection or wider supply-rail clampingSelect when circuit reverse stress exceeds 40 V but identical low-leakage performance is required.
1N4148WSSOD-323 package (2.7 × 1.2 mm), 100 V VRRM, 25 nA IR @ 20 VSurface-mount compatible but higher leakage and smaller thermal massChoose for space-constrained layouts where 25 nA leakage is acceptable and 500 K/W RthJA is not critical.

Compared with BAQ133-GS18, BAQ134-GS18 offers higher reverse voltage headroom without sacrificing leakage or package robustness, while 1N4148WS trades off leakage and thermal performance for smaller footprint - making BAQ133-GS18 optimal for high-precision, thermally stable, low-leakage analog signal paths.

Availability

BAQ133-GS18 is available at Aetrix Electronics and suitable for protection circuits, time delay circuits, peak follower circuits, and logarithmic amplifiers requiring stable component supply with guaranteed long-term sourcing and traceable lot control.

Supply support for BAQ133-GS18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, passive elements, and sensors, with emphasis on reliability, precision, and power efficiency.

The BAQ133-GS18 belongs to Vishay's QuadroMELF small-signal diode family, engineered specifically for analog signal integrity in high-impedance, low-leakage applications such as precision measurement and timing circuits.

FAQ

What is the maximum reverse voltage rating for BAQ133-GS18?

The BAQ133-GS18 has a repetitive peak reverse voltage (VRRM) rating of 40 V and a DC reverse voltage (VR) rating of 30 V. These values define the absolute maximum reverse-bias conditions under which the BAQ133-GS18 can operate reliably without breakdown. Exceeding 30 V DC reverse bias risks permanent degradation, even if below 40 V transient peaks.

What is the typical reverse leakage current of BAQ133-GS18 at room temperature?

The BAQ133-GS18 exhibits a maximum reverse current (IR) of 1 nA at 30 V and 25 °C, with typical values as low as 0.5 nA. This ultra-low leakage is confirmed in the Vishay datasheet (Doc. #85536, Rev. 2.0) and is critical for maintaining accuracy in high-impedance analog nodes - a key reason the BAQ133-GS18 is specified for logarithmic amplifiers and peak followers.

Is BAQ133-GS18 supplied in tape-and-reel format, and what are the packaging options?

Yes, BAQ133-GS18 is supplied in tape-and-reel format. The "GS18" suffix denotes packaging in 8 mm carrier tape on 13-inch reels containing 10,000 units per reel, with 10,000 units per box. An alternative "GS08" option provides 2,500 units per 7-inch reel. Both variants share identical electrical and mechanical specifications - only packaging differs.

What is the junction capacitance of BAQ133-GS18, and how does it affect high-frequency use?

The BAQ133-GS18 has a junction capacitance (CD) of 3 pF measured at 0 V and 1 MHz. This low, stable capacitance minimizes signal distortion and phase shift in RF detector and fast-switching timing applications. Because CD remains nearly constant below 10 V reverse bias, the BAQ133-GS18 supports predictable AC performance in tuned circuits and high-speed clamping without tuning sensitivity.

Does BAQ133-GS18 have a defined thermal resistance, and how should it be used in layout design?

Yes, the BAQ133-GS18 has a thermal resistance junction-to-ambient (RthJA) of 500 K/W when mounted on a 50 mm × 50 mm × 1.6 mm FR-4 PCB. This value implies that at 25 °C ambient, power dissipation must be limited to ≤80 mW to keep junction temperature below 175 °C. Layouts should avoid excessive copper isolation around the QuadroMELF body and maintain the recommended 2 mm pad spacing to preserve this thermal rating.

BAQ133-GS18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
SOD-80 Variant
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 nA @ 15 V
Capacitance @ Vr, F:
3pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-80 QuadroMELF
Operating Temperature - Junction:
-65°C ~ 175°C

BAQ133-GS18 FAQ

1.How can I place an order for BAQ133-GS18 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAQ133-GS18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAQ133-GS18 reliable?

The price and inventory of BAQ133-GS18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAQ133-GS18 is usually 5 days.

3.What payment methods are accepted for BAQ133-GS18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAQ133-GS18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAQ133-GS18?

BAQ133-GS18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAQ133-GS18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAQ133-GS18?

For technical support, including BAQ133-GS18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAQ133-GS18 requirements.

6.How does Aetrix verify that BAQ133-GS18 is sourced from the original manufacturer or authorized distributors?

All BAQ133-GS18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAQ133-GS18 meets industry standards.

7.What is the process for return or replacement of BAQ133-GS18?

All BAQ133-GS18 units undergo pre-shipment inspection (PSI). If there is an issue with BAQ133-GS18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAQ133-GS18 part is unused and in its original packaging.

Return procedure for BAQ133-GS18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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