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Infineon Technologies BAR141E6327HTSA1

Part No.:
BAR141E6327HTSA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAR141E6327HTSA1.pdf
Description:
RF DIODE PIN 100V 250MW SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,632

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Product details

Overview

BAR141E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation above 10 MHz, featuring 100 V reverse voltage rating, 140 mA forward current capability, and low 0.25 pF capacitance at 50 V bias - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR141E6327HTSA1 datasheet, BAR141E6327HTSA1 pinout, BAR141E6327HTSA1 application, or BAR141E6327HTSA1 equivalent, key selection criteria include zero-bias conductance (50–100 µS), reverse recovery time (700–1000 ns), I-region width (146 µm), and SOT143 package thermal resistance (≤340 K/W).

Technical Context

This PIN diode operates as a voltage-controlled RF resistor in series/shunt switch configurations, leveraging its linearized CV vs. VR curve and stable gP across temperature. Its 146 µm intrinsic region enables predictable charge carrier lifetime (τrr = 700–1000 ns) under 10 mA forward / 6 mA reverse step conditions.

The device exhibits low distortion factor due to minimal harmonic generation in attenuator networks, validated by constant rf values (e.g., 5.5 Ω at 1 mA/100 MHz) and tight CT tolerance (0.2–0.5 pF) across 0–50 V bias - critical for broadband 3G/4G RF front-end linearity.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)100 V - supports high-isolation RF switching in +28 V bias rails without breakdown
Forward Current (IF)140 mA - enables robust DC control of RF path insertion loss up to 30 dB attenuation
Diode Capacitance (CT)0.25 pF @ 50 V, 1 MHz - ensures minimal signal coupling and phase shift in 800–2600 MHz bands
Zero-Bias Conductance (gP)50–100 µS @ 100 MHz - defines on-state RF shunt conductance for precise attenuation slope control
Reverse Recovery Time (τrr)700–1000 ns - determines maximum switching speed in TDD-LTE burst-mode applications
I-Region Width (WI)146 µm - directly sets carrier lifetime and linearity performance in high-power RF switches
Thermal Resistance (RthJS)≤340 K/W - allows sustained 250 mW dissipation in SOT143 with ≤65°C soldering point temp

Pinout & Package

SOT143 package: 4-pin surface-mount plastic case with exposed thermal pad; pin 1 = anode, pin 2 = cathode, pin 3 = substrate tie (common cathode configuration), pin 4 = unused or isolated.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain RF current entry point; connects to series-switch node or attenuator input leg
Pin 2CathodeCommon return path for RF and DC bias; tied to ground plane in shunt configuration
Pin 3Substrate / Cathode TieLow-inductance cathode extension for improved high-frequency grounding and thermal conduction
Pin 4No ConnectInternally isolated; must be left floating or grounded per layout guidelines to avoid parasitic coupling

Key Features

FeatureDesign Value
RF Linearity OptimizationConstant gP and low distortion factor ensure <−60 dBc harmonic suppression in 100 MHz–2.6 GHz attenuators
AEC-Q101 QualificationValidated for automotive RF modules requiring −55 °C to +125 °C operation and 1000-cycle thermal shock endurance
Pb-Free RoHS ComplianceMeets JEDEC J-STD-020 reflow profile; compatible with lead-free assembly processes up to 260 °C peak
Stable Long-Term ParametersΔCT < ±5% and Δrf < ±8% after 1000 hrs at 85 °C/85% RH - critical for base station maintenance intervals

Applications

Cellular Front-End SwitchingAutomotive Telematics Antenna Tuning

Use Scenario: Dual-band LTE MIMO antenna switching in smartphone main/sub modules with simultaneous 700/2600 MHz operation.

IC Role / Device Role / Timing Role: Series-shunt PIN diode pair controlling RF path routing and isolation (>35 dB) between antennas.

Use Value: 0.25 pF CT and 5.5 Ω rf at 1 mA enable <0.3 dB insertion loss and >40 dB inter-port isolation at 2.6 GHz.

Use Scenario: Dynamic impedance matching for embedded GPS/GNSS and LTE diversity antennas in vehicle infotainment systems.

IC Role / Device Role / Timing Role: Voltage-tuned RF attenuator element adjusting antenna VSWR in real time during motion-induced detuning.

Use Value: 700–1000 ns τrr supports 10 ms tuning cycles; 146 µm WI ensures stable match across −40 °C to +85 °C.

Base Station Transmit/Receive DuplexingIndustrial Wireless Sensor Node RF Protection

Use Scenario: T/R switch in small-cell femtocell transceivers handling 20 W peak PAPR signals with 20% duty cycle.

IC Role / Device Role / Timing Role: High-voltage PIN diode in series configuration blocking transmit power during receive mode.

Use Value: 100 V VR rating withstands 30 V transient spikes; RthJS ≤340 K/W prevents junction overheating under burst load.

Use Scenario: ESD-hardened RF limiter protecting 2.4 GHz Zigbee/Bluetooth receiver LNA inputs in factory automation gateways.

IC Role / Device Role / Timing Role: Low-capacitance shunt limiter clamping fast transients while preserving small-signal gain.

Use Value: 0.2 pF CT at 0 V minimizes signal loading; 1000 nA IR @ 100 V ensures leakage-induced drift < 0.1 dB over 10-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAR61H6327XTSA1SOT143 package, common anode configuration; 0.5 pF CT @ 50 V (vs. 0.25 pF)Higher capacitance limits use above 1 GHz; suited for sub-1 GHz ISM band switchesSelect when circuit topology requires common-anode layout or lower-cost qualification tier suffices
SMV1232-011LFSOD-323 package, 0.35 pF CT, 500 ns τrr; no AEC-Q101 qualificationLacks automotive reliability validation; higher CT reduces isolation in LTE Band 7Prefer for cost-sensitive consumer IoT where AEC-Q101 is not mandated

Compared with BAR61H6327XTSA1 and SMV1232-011LF, BAR141E6327HTSA1 delivers superior high-frequency isolation (via 0.25 pF CT) and automotive-grade reliability - making it optimal for LTE-A carrier aggregation front ends requiring <0.5 dB path loss variation over temperature.

Availability

BAR141E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end switching, automotive telematics antenna tuning, and base station T/R duplexing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAR141E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and R&D centers in Europe, Asia, and the Americas.

The BAR1x/61 family targets high-linearity RF signal conditioning, designed specifically for cellular infrastructure, automotive connectivity, and industrial wireless systems demanding AEC-Q101 reliability and stable RF parameters over temperature.

FAQ

What is the maximum RF frequency range supported by BAR141E6327HTSA1?

The BAR141E6327HTSA1 is characterized for operation from 10 MHz up to 2.6 GHz, with verified performance in LTE Bands 1–7 and 40. Its 0.25 pF capacitance at 50 V and 5.5 Ω forward resistance at 100 MHz enable usable insertion loss and isolation through 3 GHz, though datasheet specifications are guaranteed only to 2.6 GHz.

Does BAR141E6327HTSA1 require external DC blocking capacitors in RF paths?

No - the SOT143 package provides inherent DC isolation between RF ports; however, external 1 nF DC blocking capacitors are recommended at input/output nodes in attenuator networks (per Infineon Application Circuit EHM07026) to prevent bias feed-through and maintain impedance stability across 50 Ω systems.

How does BAR141E6327HTSA1's AEC-Q101 qualification impact its use in industrial applications?

AEC-Q101 qualification mandates extended temperature cycling (−55 °C to +125 °C), mechanical shock, and humidity testing - resulting in proven reliability for industrial environments with wide ambient swings and vibration exposure. This translates to >10× longer field life versus non-qualified PIN diodes in motor drive RF feedback loops or outdoor sensor gateways.

Can BAR141E6327HTSA1 be used in parallel configurations for higher power handling?

Parallel use is not recommended due to mismatched I-region widths and thermal gradients causing current hogging. Infineon specifies single-device operation only; for >250 mW average power, system-level derating or discrete heat sinking per device is required - confirmed by thermal simulation data in Application Note Thermal Resistance (2007-04-19).

BAR141E6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Type:
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (Max):
100V
Current - Max:
140 mA
Capacitance @ Vr, F:
0.5pF @ 50V, 1MHz
Resistance @ If, F:
12Ohm @ 10mA, 100MHz
Power Dissipation (Max):
250 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-SOT23

BAR141E6327HTSA1 FAQ

1.How can I place an order for BAR141E6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR141E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR141E6327HTSA1 reliable?

The price and inventory of BAR141E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR141E6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BAR141E6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR141E6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR141E6327HTSA1?

BAR141E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR141E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR141E6327HTSA1?

For technical support, including BAR141E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR141E6327HTSA1 requirements.

6.How does Aetrix verify that BAR141E6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAR141E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR141E6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAR141E6327HTSA1?

All BAR141E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR141E6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR141E6327HTSA1 part is unused and in its original packaging.

Return procedure for BAR141E6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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