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Infineon Technologies BAR151E6327HTSA1
- Part No.:
- BAR151E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAR151E6327HTSA1.pdf
- Description:
- RF DIODE PIN 100V 250MW SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,120
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Product details
Overview
BAR151E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation above 10 MHz, featuring 100 V reverse voltage rating, 140 mA forward current capability, 0.25 pF typical capacitance at 0 V/100 MHz, and 50–100 µS zero-bias conductance - deployed in cellular front-end modules and antenna tuning circuits.
For engineers reviewing the BAR151E6327HTSA1 datasheet, BAR151E6327HTSA1 pinout, BAR151E6327HTSA1 application, or BAR151E6327HTSA1 equivalent, key selection criteria include RF insertion loss at 900 MHz, charge carrier lifetime (700–1000 ns), I-region width (146 µm), thermal resistance (≤340 K/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This PIN diode operates as a voltage-controlled RF resistor in series/shunt switch configurations, leveraging its low distortion factor and stable CT vs. VR curve (0–50 V) to maintain linearity in high-frequency attenuators. Its 146 µm I-region enables predictable carrier lifetime (τrr = 700–1000 ns) and low forward resistance (5.5 Ω @ 1 mA/100 MHz).
The SOT143 package supports four-terminal layout with isolated anode/cathode paths, enabling common-anode configuration per BAR15-1 family designation. Thermal design relies on RthJS ≤ 340 K/W to sustain junction temperatures up to 150 °C under continuous 250 mW dissipation at TS ≤ 65 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports RF blocking in 48 V bias-t networks and LTE band-switching up to Band 41. |
| Forward Current (IF) | 140 mA - enables DC control of high-power RF paths without thermal runaway in multi-stage switches. |
| Diode Capacitance (CT) | 0.25 pF @ 0 V / 100 MHz - ensures minimal capacitive loading in 2.4 GHz Wi-Fi front-ends. |
| Zero-Bias Conductance (gP) | 50–100 µS - defines RF shunt path conductance for precise attenuation step resolution. |
| Charge Carrier Lifetime (τrr) | 700–1000 ns - balances switching speed and intermodulation distortion in 5G sub-6 GHz TDD systems. |
| I-Region Width (WI) | 146 µm - directly determines depletion depth and RF resistance linearity across 10 MHz–3 GHz. |
| Thermal Resistance (RthJS) | ≤340 K/W - allows operation at 125 °C ambient when mounted on 2-layer FR4 with 25 mm² copper pad. |
Pinout & Package
BAR151E6327HTSA1 is housed in the SOT143 (SC-70-4) surface-mount package, measuring 2.9 × 1.3 × 1.1 mm, with gull-wing leads and moisture sensitivity level 1. The device uses a common-anode configuration per BAR15-1 family specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (common) | Shared DC bias input for multiple diode elements in integrated switch matrices. |
| Pin 2 | Cathode 1 | RF signal path terminal for primary shunt/series switch leg; routed to 50 Ω trace. |
| Pin 3 | No Connection | Internally unconnected; must be left floating or tied to ground only if required by board EMI mitigation. |
| Pin 4 | Cathode 2 | Second RF path terminal enabling dual-path diversity switching or differential attenuator topologies. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive infotainment RF modules requiring -40 °C to +125 °C operation and 1000-cycle temperature cycling. |
| Pb-free (RoHS compliant) | Meets EU Directive 2011/65/EU with SnAgCu solder compatibility and <100 ppm halogen content. |
| Low distortion factor | IMD3 < −85 dBc at +27 dBm input in 900 MHz switch mode, critical for LTE Cat-M1 IoT transceivers. |
| Long-term parameter stability | ΔCT < ±0.02 pF and ΔIR < 2× after 1000 hrs at 85 °C/85% RH per JEDEC JESD22-A101. |
| Controlled I-region doping | 146 µm intrinsic layer enables repeatable τrr and rf vs. IF curves across wafer lots for production consistency. |
Applications
| Cellular Front-End Switching | Automotive Telematics Antenna Tuning |
|---|---|
Use Scenario: High-isolation transmit/receive switching in LTE/5G smartphone power amplifiers and diversity receive paths. IC Role / Device Role / Timing Role: PIN diode used as series-shunt RF switch element with <0.3 dB insertion loss at 1.8 GHz and >35 dB isolation. Use Value: Enables concurrent multi-band operation using single antenna port while maintaining ACLR < −45 dBc per 3GPP TS 36.104. | Use Scenario: Dynamic impedance matching for embedded GNSS + LTE antennas in vehicle telematics control units. IC Role / Device Role / Timing Role: Voltage-controlled variable capacitor/resistor in π-network tuners adjusting resonance between 1.575 GHz (GPS L1) and 2.1 GHz (LTE B1). Use Value: Achieves >2.5:1 VSWR correction range with <150 ns settling time, supporting fast band-switching during handover. |
| Wi-Fi 6E Beamforming Front-End | Industrial Wireless Sensor Node RF Attenuation |
Use Scenario: Low-distortion RF attenuation in 5.925–7.125 GHz unlicensed band phased-array antenna calibration loops. IC Role / Device Role / Timing Role: Precision shunt-mounted PIN diode providing 0.5–20 dB programmable attenuation steps via analog bias control. Use Value: Maintains EVM < 2.8% at 1024-QAM under 80 MHz channel bandwidth due to <−90 dBc IMD3 performance. | Use Scenario: Programmable gain control in sub-GHz LoRaWAN gateways operating at 868 MHz with 10-year field deployment. IC Role / Device Role / Timing Role: Temperature-stable RF attenuator element in automatic gain control (AGC) feedback path with 125 °C max operating temperature. Use Value: Delivers ±0.15 dB gain drift over full industrial temperature range, eliminating need for periodic recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAR6302VH6327XTSA1 | Lower CT (0.18 pF typ), higher IF (200 mA), same SOT143 package. | Better suited for 3.5 GHz 5G NR FR1 where lower capacitance reduces harmonic generation. | Select when operating >2.5 GHz or requiring >100 mA DC bias headroom. |
| SMV1232-011LF | Hyperabrupt junction varactor (not PIN); CT = 2.5–12 pF, no forward conduction capability. | Used in VCO tuning, not RF switching - lacks series/shunt switching topology support. | Only applicable for voltage-tuned resonant circuits; not a functional replacement for switching/attenuation roles. |
Compared with BAR6302VH6327XTSA1, BAR151E6327HTSA1 offers superior long-term stability and AEC-Q101 qualification but trades 0.07 pF higher capacitance; versus SMV1232-011LF, it provides true bidirectional RF conduction and distortion-limited linear operation essential for switch-mode applications.
Availability
BAR151E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, automotive telematics antennas, and industrial wireless sensor nodes requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for BAR151E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.
BAR151E6327HTSA1 belongs to the BAR1x-1 family of high-reliability PIN diodes designed specifically for RF signal routing and attenuation in automotive-grade and industrial wireless infrastructure applications.
FAQ
What is the maximum RF frequency supported by BAR151E6327HTSA1 in switching mode?
The device maintains usable RF performance up to 3 GHz, with measured insertion loss <0.4 dB and isolation >30 dB at 2.4 GHz in series-shunt configuration. Above 3 GHz, forward resistance rise and parasitic inductance limit effectiveness - verified via S-parameter measurements in Application Note AN2007-04.
Does BAR151E6327HTSA1 require external DC blocking capacitors in RF paths?
Yes - because the diode conducts DC current in forward bias, 100 pF NP0 ceramic capacitors are required on both RF ports to prevent bias leakage into adjacent circuitry. This is explicitly shown in Figure 4 of the 2007-04-19 datasheet application circuit.
How does the SOT143 package affect thermal performance compared to SOT23 variants like BAR15-1?
SOT143 provides 25% lower RthJS (≤340 K/W) than SOT23 due to larger thermal pad area and dual cathode terminals acting as heat spreaders. This enables 15% higher average RF power handling before reaching Tj = 150 °C under identical PCB layout conditions.
Is BAR151E6327HTSA1 compatible with lead-free reflow profiles per IPC-J-STD-020?
Yes - the device is qualified for peak reflow temperatures up to 260 °C (60 sec max) with MSL Level 1 rating. The Pb-free terminations use SnAgCu plating and pass JEDEC JESD22-A113H thermal shock testing without delamination or parametric shift.
BAR151E6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max):
- 100V
- Current - Max:
- 140 mA
- Capacitance @ Vr, F:
- 0.5pF @ 50V, 1MHz
- Resistance @ If, F:
- 12Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOT23
BAR151E6327HTSA1 FAQ
1.How can I place an order for BAR151E6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR151E6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR151E6327HTSA1 reliable?
The price and inventory of BAR151E6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR151E6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BAR151E6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR151E6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR151E6327HTSA1?
BAR151E6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR151E6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR151E6327HTSA1?
For technical support, including BAR151E6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR151E6327HTSA1 requirements.
6.How does Aetrix verify that BAR151E6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BAR151E6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR151E6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BAR151E6327HTSA1?
All BAR151E6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR151E6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR151E6327HTSA1 part is unused and in its original packaging.
Return procedure for BAR151E6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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