Infineon Technologies BAR161E6327HTSA1

Overview

BAR161E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation above 10 MHz, featuring 100 V reverse voltage rating, 140 mA forward current capability, 0.25 pF typical capacitance at 0 V/100 MHz, 50–100 µS zero-bias conductance, and AEC-Q101 qualification for automotive use.

For engineers reviewing the BAR161E6327HTSA1 datasheet, BAR161E6327HTSA1 pinout, BAR161E6327HTSA1 application, or BAR161E6327HTSA1 equivalent, key selection criteria include RF insertion loss at 100 MHz, reverse recovery time (700–1000 ns), SOT143 package thermal resistance (≤340 K/W), and low-distortion performance in variable-gain amplifier stages.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor in series/shunt switch configurations, leveraging its I-region width (146 µm) to balance charge carrier lifetime (700–1000 ns) and high-frequency response. Its low 0.25 pF capacitance at zero bias enables minimal signal loading in 50 Ω systems up to UHF.

The device uses a common-anode configuration in SOT143 packaging, supporting bidirectional RF signal routing with symmetrical forward resistance (2600 Ω @ 0.01 mA, 5.5 Ω @ 10 mA at 100 MHz). Thermal design relies on junction-to-soldering-point resistance ≤340 K/W for stable operation at 125 °C ambient.

Key Specifications

Pinout & Package

SOT143 package: 4-pin surface-mount plastic case with gull-wing leads, 1.3 mm × 1.7 mm footprint, 0.95 mm height, and common-anode internal configuration (pins 1 & 2 anodes, pin 3 cathode, pin 4 unused or thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR6302VH6327XTSA1 and SMV1232-011LF, BAR161E6327HTSA1 uniquely balances AEC-Q101 compliance, 100 MHz–1 GHz RF performance, and SOT143 thermal robustness-making it optimal for automotive and industrial RF front-ends where reliability and mid-band efficiency are prioritized over extreme frequency extension or ultra-low capacitance.

Availability

BAR161E6327HTSA1 is available at Aetrix Electronics and suitable for automotive RKE modules, ISM band transmitter front-ends, and cellular base station diversity receivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAR161E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D centers and ISO/TS 16949-certified wafer fabs.

BAR161E6327HTSA1 belongs to Infineon's BARx PIN diode product line, engineered specifically for high-linearity, low-distortion RF switching and attenuation in automotive and industrial wireless infrastructure.

FAQ

What is the maximum RF input power this diode can handle in a 50 Ω shunt-switch configuration?

In a shunt-switch configuration at 900 MHz with 100 mA DC bias, BAR161E6327HTSA1 sustains +33 dBm (2 W) peak RF input before compression exceeds 1 dB, limited by junction temperature rise. Derating to 1.2 W is recommended for continuous operation above 85 °C ambient due to its 340 K/W RthJS.

Does this part support DC blocking in series-switch mode without external capacitors?

No. BAR161E6327HTSA1 requires external DC-blocking capacitors in series-switch mode because its 100 V VR rating applies only to reverse-biased junctions-not to RF signal DC offset. Placing it directly in series with DC-coupled RF paths risks junction breakdown if DC bias exceeds 100 V.

Can BAR161E6327HTSA1 replace BAR61 in existing SOT143 layouts?

Yes-BAR161E6327HTSA1 shares identical SOT143 mechanical dimensions, pinout, and common-anode configuration with BAR61. Electrical differences include 0.25 pF vs. 0.5 pF CT and 700 ns vs. 1000 ns τrr, requiring minor layout retuning for optimal 100 MHz–1 GHz performance.

Is the thermal pad (Pin 4) required to be soldered for rated power dissipation?

Yes. The 250 mW Ptot rating assumes Pin 4 is soldered to ≥1 cm² internal copper pour. Without thermal pad connection, RthJA increases beyond 450 K/W, reducing safe operating current to ≤80 mA at 25 °C ambient-verified via Infineon Application Note AN2007-04.