Infineon Technologies BAR61E6327HTSA1

Overview

BAR61E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for RF switching and attenuation above 10 MHz, featuring 100 V reverse voltage rating, 140 mA forward current capability, 0.25 pF typical capacitance at 0 V/100 MHz, and 50–100 µS zero-bias conductance - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR61E6327HTSA1 datasheet, BAR61E6327HTSA1 pinout, BAR61E6327HTSA1 application, or BAR61E6327HTSA1 equivalent, key selection criteria include RF insertion loss at 900 MHz, reverse recovery time (700–1000 ns), SOT143 package thermal resistance (≤340 K/W), and low-distortion performance in variable-gain amplifier stages.

Technical Context

This PIN diode operates as a voltage-controlled RF resistor in series/shunt switch configurations, leveraging its I-region width of 146 µm to balance charge carrier lifetime (τ_rr = 700–1000 ns) and high-frequency conductance. Its low 0.25 pF capacitance at zero bias enables minimal signal coupling in 50 Ω systems up to 2.5 GHz.

The device uses a common-anode configuration in SOT143 package with four terminals: anode (Pin 1), cathode (Pin 2), and two isolated cathode connections (Pins 3 & 4) for dual-path RF routing. Thermal design relies on junction-to-soldering-point resistance ≤340 K/W under TS ≤ 65°C conditions.

Key Specifications

Pinout & Package

SOT143 package: 4-terminal surface-mount plastic package with gull-wing leads, 1.3 mm × 1.7 mm footprint, 0.95 mm height, and common-anode internal configuration (Pin 1 = anode; Pins 2, 3, 4 = cathodes).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF PIN diode switching applications.

Compared with BAR61E6327HTSA1, BAR63E6327HTMA1 trades bandwidth for improved linearity below 1 GHz, while SMV1232-011 sacrifices multi-terminal routing for ultra-low capacitance and smaller footprint - making BAR61 optimal for multi-band front-end designs requiring cathode isolation.

Availability

BAR61E6327HTSA1 is available at Aetrix Electronics and suitable for cellular infrastructure, automotive telematics, and industrial wireless sensor networks requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAR61E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The BAR1.../BAR61... series targets high-reliability RF signal conditioning, designed specifically for cellular, automotive, and industrial wireless systems demanding AEC-Q101 qualification and long-term parametric stability.

FAQ

What is the maximum RF frequency supported by BAR61E6327HTSA1?

The BAR61E6327HTSA1 is characterized up to 2.5 GHz in application notes, with usable performance confirmed at 3.5 GHz in S-parameter measurements. Its 0.25 pF capacitance and 50–100 µS conductance yield <0.3 dB insertion loss at 2.4 GHz in 50 Ω series-switch layouts, validated in Infineon's EHM07026 reference circuit.

Can BAR61E6327HTSA1 be used in DC-coupled RF paths?

No - BAR61E6327HTSA1 must be AC-coupled due to its 100 V reverse voltage limit and lack of DC blocking integration. Application circuits require external 1 nF DC-blocking capacitors, as shown in Infineon's EHM07026 attenuator schematic, to prevent forward conduction during RF envelope peaks.

How does the SOT143 common-anode configuration affect PCB layout?

The SOT143 common-anode layout requires separate copper pours for each cathode (Pins 2–4) to avoid RF crosstalk. Ground vias must be placed within 2 mm of each cathode pad, and anode (Pin 1) trace impedance must be maintained at 50 Ω using microstrip geometry - per Infineon's SOT143 footprint guidelines in document 2007-04-19, page 5.

Is BAR61E6327HTSA1 suitable for pulsed RF applications?

Yes - with τ_rr = 700–1000 ns and 140 mA I_F, it supports pulse widths ≥2 µs at 10% duty cycle. For TDD-LTE frame structures (e.g., 0.5 ms transmit bursts), thermal rise remains <15°C under 100 mA peak current, verified in Infineon's thermal resistance testing (R_thJS ≤340 K/W).