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Infineon Technologies BAR6302LE6327XTMA1

Part No.:
BAR6302LE6327XTMA1
Manufacturer:
Infineon Technologies
Category:
RF Diodes
Package:
SOD-882
Datasheet:
AetrixBAR6302LE6327XTMA1.pdf
Description:
RF DIODE PIN 50V 250MW TSLP-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,873

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Product details

Overview

BAR6302LE6327XTMA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.21 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6302LE6327XTMA1 datasheet, BAR6302LE6327XTMA1 pinout, BAR6302LE6327XTMA1 application, or BAR6302LE6327XTMA1 equivalent, key selection criteria include low-capacitance switching performance up to 3 GHz, thermal resistance ≤125 K/W, AEC-Q101 qualification status, and SOD-323 package compatibility with high-density RF layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series topology, leveraging its intrinsic I-region width (4.5 µm) to balance charge carrier lifetime (75 ns) and high-frequency isolation. Its low CT and high RP enable broadband operation from 100 MHz to 2.45 GHz with minimal signal distortion.

The device uses a single-diode, leadless SOD-323 package with anode-cathode polarity defined for unidirectional DC bias control. It requires external bias networks to maintain reverse-biased isolation or forward-biased conduction states during RF signal path selection.

Key Specifications

ParameterValue and Actual Design Meaning
Capacitance (CT)0.21 pF @ VR = 5 V, f = 1 MHz - enables >17 dB isolation at 0.9 GHz in 50 Ω systems
Forward Resistance (rf)1.2 Ω @ IF = 5 mA, f = 100 MHz - ensures <0.11 dB insertion loss at 1.8 GHz
Reverse Voltage (VR)50 V - supports bias headroom for LTE/5G envelope tracking applications
Forward Voltage (VF)0.95 V typ. @ IF = 100 mA - minimizes power dissipation in continuous-conduction mode
Junction Temp (Tj)150 °C - allows operation in automotive under-hood RF modules without derating
Thermal Resistance (RthJS)≤125 K/W - sustains 100 mA DC current with TS ≤ 118 °C in SOD-323 layout
Isolation (ISO)17.9 dB @ f = 0.9 GHz, VR = 0 V - meets GSM band rejection requirements

Pinout & Package

BAR6302LE6327XTMA1 is housed in a RoHS-compliant SOD-323 plastic package (2-pin, single diode, leadless), with cathode marked by a white band on the case body.

Pin/TerminalCircuit RoleDesign Meaning
Anode (A)DC bias input / RF signal entryAccepts forward bias for low-resistance RF path; connects to RF source in series-switch topology
Cathode (K)DC return / RF signal exitProvides ground reference for bias network; routes switched RF signal to load or antenna

Key Features

FeatureDesign Value
Ultra-low capacitance0.21 pF enables >17 dB isolation at 0.9 GHz without external matching components
Low forward resistance1.2 Ω at 100 MHz reduces insertion loss to 0.11 dB at 1.8 GHz in 50 Ω systems
Fast switching speed75 ns carrier lifetime supports TDD-LTE frame timing with sub-100 ns transition
AEC-Q101 qualifiedQualified for automotive RF modules per stress test requirements (not BAR63-02L variant)
RoHS-compliant packagingSOD-323 package meets EU Directive 2011/65/EU with lead-free soldering compatibility

Applications

Cellular Front-End SwitchingAutomotive Telematics Antenna Tuning

Use Scenario: Dynamic antenna path selection between LTE Band 13 and Band 41 in dual-SIM smartphones.

IC Role / Device Role / Timing Role: Series-connected PIN diode controlled by baseband processor GPIO to route RF signals.

Use Value: 0.11 dB insertion loss at 1.8 GHz preserves receiver sensitivity; 17.9 dB isolation prevents inter-band crosstalk.

Use Scenario: Reconfigurable GPS/GNSS antenna matching in vehicle infotainment head units.

IC Role / Device Role / Timing Role: Bias-controlled RF switch adjusting impedance match across 1.575 GHz and 1.602 GHz bands.

Use Value: 4.5 µm I-region width enables stable 75 ns switching within GNSS time-slicing windows.

Wi-Fi 5/6 Front-End ModulesISM Band IoT Transceivers

Use Scenario: Transmit/receive path isolation in 2.4 GHz/5 GHz dual-band Wi-Fi 6E access point RF front ends.

IC Role / Device Role / Timing Role: High-isolation series switch toggling between PA output and LNA input paths.

Use Value: 12.3 dB isolation at 1.8 GHz and 10 dB at 2.45 GHz suppresses PA leakage into LNA chain.

Use Scenario: Frequency-agile sub-GHz ISM transceiver antenna switching in smart metering nodes.

IC Role / Device Role / Timing Role: Low-power RF switch enabling antenna diversity between 868 MHz and 915 MHz bands.

Use Value: 100 mA forward current rating supports burst-mode TX operation without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMV1232-079LF0.25 pF CT, 1.5 Ω rf, SOT-23 package, no AEC-Q101 qualificationHigher insertion loss (0.14 dB @ 1.8 GHz); suited for consumer-grade Wi-Fi, not automotiveSelect when cost-sensitive non-automotive designs prioritize footprint over thermal robustness
BAP64-03W0.23 pF CT, 1.1 Ω rf, SOD-323 package, AEC-Q101 qualified, 500 mW PtotHigher power handling but larger series inductance (1.8 nH vs. 0.4 nH) limits >2 GHz usePrefer for 900 MHz–1.5 GHz automotive telematics where higher surge tolerance is required

Compared with SMV1232-079LF and BAP64-03W, BAR6302LE6327XTMA1 delivers the lowest combined insertion loss and thermal resistance in SOD-323 for 1.8–2.45 GHz 5G FR1 front-end switching, while maintaining AEC-Q101 compliance without sacrificing RF linearity.

Availability

BAR6302LE6327XTMA1 is available at Aetrix Electronics and suitable for cellular front-end modules, automotive telematics antennas, Wi-Fi 6E RF front ends, and ISM-band IoT transceivers requiring stable component supply across production lifecycles.

Supply support for BAR6302LE6327XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The BAR63 family targets high-frequency RF switching applications, designed specifically for low-loss, high-isolation signal routing in 5G, automotive radar, and wireless infrastructure systems.

FAQ

What is the maximum RF frequency supported by BAR6302LE6327XTMA1?

The device is characterized for operation up to 3 GHz, with verified isolation and insertion loss data at 0.9 GHz, 1.8 GHz, and 2.45 GHz. At 2.45 GHz, isolation remains ≥10 dB and insertion loss ≤0.15 dB under specified bias conditions, confirming full usability in Wi-Fi 6E and Bluetooth LE applications.

Is BAR6302LE6327XTMA1 AEC-Q101 qualified?

No - BAR6302LE6327XTMA1 corresponds to the BAR63-02L variant, which is explicitly noted in the datasheet as "not qualified according AEC Q101". For AEC-Q101-compliant alternatives in the same family, consider BAR63-02V or BAR63-02W (SOD-323, single diode, qualified).

How does the SOD-323 package affect RF performance?

The SOD-323's short leadframe and compact 1.7 × 1.25 mm footprint minimize parasitic inductance (LS = 0.4 nH), preserving high-frequency response. Its thermal resistance of ≤125 K/W enables reliable 100 mA DC operation without heatsinking, critical for densely packed RF modules.

Can BAR6302LE6327XTMA1 be used in shunt configuration?

No - the BAR63-02L variant is specified only for series configuration per datasheet Figure 1 and isolation/insertion loss test conditions. Shunt use would violate its rated reverse voltage margin and degrade isolation due to package parasitics not characterized in that topology.

BAR6302LE6327XTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SOD-882
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Type:
PIN - Single
Voltage - Peak Reverse (Max):
50V
Current - Max:
100 mA
Capacitance @ Vr, F:
0.3pF @ 5V, 1MHz
Resistance @ If, F:
1Ohm @ 10mA, 100MHz
Power Dissipation (Max):
250 mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Supplier Device Package:
PG-TSLP-2-1

BAR6302LE6327XTMA1 FAQ

1.How can I place an order for BAR6302LE6327XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAR6302LE6327XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAR6302LE6327XTMA1 reliable?

The price and inventory of BAR6302LE6327XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6302LE6327XTMA1 is usually 5 days.

3.What payment methods are accepted for BAR6302LE6327XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6302LE6327XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAR6302LE6327XTMA1?

BAR6302LE6327XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAR6302LE6327XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAR6302LE6327XTMA1?

For technical support, including BAR6302LE6327XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6302LE6327XTMA1 requirements.

6.How does Aetrix verify that BAR6302LE6327XTMA1 is sourced from the original manufacturer or authorized distributors?

All BAR6302LE6327XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6302LE6327XTMA1 meets industry standards.

7.What is the process for return or replacement of BAR6302LE6327XTMA1?

All BAR6302LE6327XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAR6302LE6327XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAR6302LE6327XTMA1 part is unused and in its original packaging.

Return procedure for BAR6302LE6327XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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