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Infineon Technologies BAR6302LE6433XT
- Part No.:
- BAR6302LE6433XT
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SOD-882
- Datasheet:
-
BAR6302LE6433XT.pdf
- Description:
- RF DIODE PIN 50V 250MW TSLP-2
- Quantity:
- Payment:
- Shipping:
Inventory:3,280
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Product details
Overview
BAR6302LE6433XT from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.21 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.
For engineers reviewing the BAR6302LE6433XT datasheet, BAR6302LE6433XT pinout, BAR6302LE6433XT application, or BAR6302LE6433XT equivalent, key selection criteria include RF isolation above 12.3 dB at 1.8 GHz, reverse voltage rating of 50 V, low-charge-carrier lifetime (75 ns), and SOD323 package compatibility with high-frequency PCB layout constraints.
Technical Context
This PIN diode operates as a voltage-controlled RF switch in series topology, leveraging its low I-region width (4.5 µm) and fast carrier lifetime (75 ns) to enable sub-nanosecond switching transitions. Its RF performance is defined by low CT (≤0.3 pF) and high RP (≥500 kΩ at 100 MHz), supporting broadband operation up to 3 GHz.
The device uses a single-diode configuration in SOD323 package with anode and cathode terminals only - no integrated bias network or matching elements. Thermal resistance (RthJS ≤ 380 K/W) and 250 mW total power dissipation are specified for continuous DC operation at TA = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage | 50 V - supports biasing in 3G/4G PA output stage switching without breakdown |
| Capacitance (VR=5 V, 1 MHz) | 0.21 pF - enables >20 dB isolation below 2 GHz in 50 Ω systems |
| Forward Resistance (IF=5 mA, 100 MHz) | 1.2 Ω - contributes <0.15 dB insertion loss at 1.8 GHz in series-switch topology |
| Charge Carrier Lifetime | 75 ns - ensures <100 ns turn-off time for TDD LTE frame switching |
| Isolation (VR=0 V, 1.8 GHz) | 12.3 dB - meets minimum rejection requirement for LTE Band 40 antenna diversity paths |
| Insertion Loss (IF=5 mA, 1.8 GHz) | 0.11 dB - maintains EVM compliance in 20 MHz LTE uplink signals |
| Junction Temperature | 150 °C - allows operation in sealed RF power amplifier enclosures with limited airflow |
Pinout & Package
BAR6302LE6433XT is housed in a SOD323 plastic surface-mount package (2.1 mm × 1.3 mm × 0.9 mm), lead-free and RoHS-compliant. The device has two terminals in single-diode configuration: anode and cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | RF input / DC bias entry | Connected to RF source or PA output; accepts forward bias current up to 100 mA |
| Cathode | RF output / DC return path | Connected to antenna or filter; forms series-switch path with anode under forward bias |
Key Features
| Feature | Design Value |
|---|---|
| Low Capacitance | 0.21 pF at 5 V - minimizes shunt path loading on 50 Ω RF traces up to 2.45 GHz |
| High Isolation | 12.3 dB @ 1.8 GHz - suppresses leakage between transmit/receive paths in TDD systems |
| Fast Switching | 75 ns carrier lifetime - enables clean transition between LTE FDD uplink/downlink slots |
| Low Insertion Loss | 0.11 dB @ 1.8 GHz - preserves signal integrity in narrowband IoT transceivers |
| AEC-Q101 Qualified | Not qualified - intended for commercial-grade RF modules, not automotive applications |
Applications
| Cellular Front-End Switching | Wi-Fi 2.4 GHz Antenna Tuning |
|---|---|
Use Scenario: High-isolation switching between LTE Band 1 and Band 3 transmit paths in dual-band power amplifiers. IC Role / Device Role / Timing Role: Series-connected PIN diode acting as RF gate controlled by DC bias voltage. Use Value: 12.3 dB isolation at 1.8 GHz prevents inter-band interference while maintaining 0.11 dB insertion loss. | Use Scenario: Dynamic impedance matching for Wi-Fi 2.4 GHz antennas in compact handheld devices. IC Role / Device Role / Timing Role: Bias-controlled RF switch reconfiguring antenna feedpoint in real time. Use Value: 0.21 pF capacitance and 1.2 Ω forward resistance enable sub-0.15 dB loss during active tuning cycles. |
| ISM Band 2.45 GHz Transceiver | GNSS L1 Band (1.575 GHz) Signal Routing |
Use Scenario: Transmit/receive path selection in Bluetooth LE and Zigbee SoC reference designs. IC Role / Device Role / Timing Role: Low-loss series switch enabling half-duplex operation with <100 ns settling. Use Value: 75 ns carrier lifetime ensures reliable TDD timing alignment across 2.4–2.4835 GHz ISM band. | Use Scenario: Antenna signal routing between GNSS receiver and cellular modem in multi-radio modules. IC Role / Device Role / Timing Role: High-isolation RF switch isolating sensitive L1 band receive path from noisy TX sections. Use Value: 17.9 dB isolation at 0.9 GHz protects GNSS sensitivity from adjacent-band cellular harmonics. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SKY13370-374LF | Higher capacitance (0.35 pF), lower Rf (0.8 Ω), integrated matching network | Designed for 50 Ω matched front-end use; requires no external DC blocking | Prefer when board space is constrained and matching components must be minimized |
| MA4P7472F-1072T | Lower max IF (50 mA), higher CT (0.4 pF), TO-236AB package | Optimized for test equipment; larger footprint and higher thermal resistance (RthJS = 450 K/W) | Prefer for lab-grade RF switches where solderability and probe access matter more than size |
Compared with SKY13370-374LF and MA4P7472F-1072T, BAR6302LE6433XT offers the lowest capacitance and best isolation-to-loss ratio in SOD323, making it optimal for miniaturized, high-frequency mobile RF front ends where layout parasitics dominate performance.
Availability
BAR6302LE6433XT is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna tuning circuits, ISM band transceivers, and GNSS signal routing requiring stable component supply across production volumes.
Supply support for BAR6302LE6433XT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.
This part belongs to Infineon's BAR63 family of high-speed silicon PIN diodes, designed specifically for RF signal routing and switching in wireless infrastructure and mobile handset front-end architectures.
FAQ
What is the maximum RF frequency supported by BAR6302LE6433XT?
The device is characterized for operation up to 3 GHz, with verified performance metrics including 12.3 dB isolation at 1.8 GHz and 10 dB isolation at 2.45 GHz. Measured insertion loss remains below 0.15 dB through 1.8 GHz, and S-parameter data confirms usable response beyond 2.5 GHz in 50 Ω systems with proper layout.
Can BAR6302LE6433XT be used in series-shunt switching configurations?
No - BAR6302LE6433XT is a single-diode device in SOD323 package with only anode and cathode terminals. It supports series-switch topology only. Shunt or series-shunt configurations require dual-diode packages like BAR63-04W or external discrete placement of second diode with appropriate DC blocking.
What is the recommended DC bias current for optimal RF performance?
For minimal insertion loss and stable resistance, use 5–10 mA forward current. At 5 mA, forward resistance is 1.2 Ω and insertion loss is 0.11 dB at 1.8 GHz; at 10 mA, resistance drops to 1.0 Ω but thermal rise increases. Do not exceed 100 mA DC or 250 mW total dissipation to avoid junction overheating.
Is BAR6302LE6433XT suitable for automotive applications?
No - this variant (BAR63-02L) is explicitly noted as "not qualified according AEC Q101" in the official datasheet. While it shares construction with AEC-Q101-qualified variants like BAR63-02V, BAR6302LE6433XT lacks the required stress testing, lot traceability, and failure analysis documentation for automotive use.
BAR6302LE6433XT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 5V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-TSLP-2-1
BAR6302LE6433XT FAQ
1.How can I place an order for BAR6302LE6433XT through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR6302LE6433XT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR6302LE6433XT reliable?
The price and inventory of BAR6302LE6433XT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR6302LE6433XT is usually 5 days.
3.What payment methods are accepted for BAR6302LE6433XT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR6302LE6433XT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR6302LE6433XT?
BAR6302LE6433XT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR6302LE6433XT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR6302LE6433XT?
For technical support, including BAR6302LE6433XT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR6302LE6433XT requirements.
6.How does Aetrix verify that BAR6302LE6433XT is sourced from the original manufacturer or authorized distributors?
All BAR6302LE6433XT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR6302LE6433XT meets industry standards.
7.What is the process for return or replacement of BAR6302LE6433XT?
All BAR6302LE6433XT units undergo pre-shipment inspection (PSI). If there is an issue with BAR6302LE6433XT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR6302LE6433XT part is unused and in its original packaging.
Return procedure for BAR6302LE6433XT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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