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Infineon Technologies BAR 63-02V E6327
- Part No.:
- BAR 63-02V E6327
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-79, SOD-523
- Datasheet:
-
BAR 63-02V E6327.pdf
- Description:
- RF DIODE PIN 50V 250MW SC79-2
- Quantity:
- Payment:
- Shipping:
Inventory:5,591
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Product details
Overview
BAR 63-02V E6327 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.21 pF typical capacitance at 5 V/1 MHz, 1.2 Ω typical forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules, antenna tuning circuits, and LTE band-switching applications.
For engineers reviewing the BAR 63-02V E6327 datasheet, BAR 63-02V E6327 pinout, BAR 63-02V E6327 application, or BAR 63-02V E6327 equivalent, key selection criteria include RF isolation at 1.8 GHz (12.3 dB), reverse voltage rating (50 V), thermal resistance (140 K/W), and SOD323 package compatibility with high-frequency PCB layout constraints.
Technical Context
This PIN diode operates as a voltage-controlled RF switch in series topology, where forward bias reduces series impedance (<1.2 Ω) to pass RF signals, while reverse bias maximizes off-state isolation (>12 dB at 1.8 GHz) via low junction capacitance (≤0.3 pF). Its I-region width of 4.5 µm enables fast carrier lifetime (75 ns) and stable performance up to 3 GHz.
The device is qualified per AEC-Q101 for automotive-grade reliability, supports DC forward currents up to 100 mA, and maintains thermal stability with junction temperature limits up to 150 °C and solder-point thermal resistance of ≤140 K/W in SOD323 packaging.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 50 V - defines maximum RF peak voltage the diode withstands in off-state without breakdown |
| Capacitance (CT) | 0.21 pF typ. @ 5 V, 1 MHz - enables high isolation and minimal loading on 50 Ω RF paths |
| Forward Resistance (rf) | 1.2 Ω typ. @ 5 mA, 100 MHz - ensures low insertion loss (<0.11 dB @ 1.8 GHz) in series-switched paths |
| Insertion Loss | 0.11 dB @ 1.8 GHz, 5 mA - directly impacts signal integrity in LTE/5G front-end switching |
| Isolation | 12.3 dB @ 1.8 GHz, 0 V - determines RF leakage suppression between switched antenna branches |
| Charge Carrier Lifetime (τrr) | 75 ns - sets upper limit for switching speed in time-division duplex (TDD) systems |
| Thermal Resistance (RthJS) | ≤140 K/W - constrains power derating above 115 °C case temperature in compact RF modules |
Pinout & Package
BAR 63-02V E6327 is housed in a SOD323 surface-mount package (2.1 × 1.3 × 0.9 mm), leadless, single-diode configuration with cathode marked by a white band. The package supports reflow soldering per JEDEC J-STD-020 and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry point | Bias control node: positive voltage enables low-resistance RF conduction path |
| Cathode (K) | Forward current exit / reference node | Connected to RF ground or common return; white marking identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive infotainment and telematics RF modules requiring extended temperature operation (−55 °C to +125 °C) |
| Low capacitance (0.21 pF) | Minimizes parasitic coupling in multi-band antenna switches, preserving impedance matching across 700–2700 MHz |
| High isolation (12.3 dB @ 1.8 GHz) | Enables clean separation of transmit/receive paths in TDD systems without external filtering |
| Fast switching (75 ns τrr) | Supports LTE frame timing (sub-1 ms slots) and dynamic antenna reconfiguration in real-time |
| SOD323 footprint | Facilitates high-density RF layout with minimal trace inductance; compatible with standard pick-and-place equipment |
Applications
| Cellular Front-End Switching | Automotive Telematics Antenna Tuning |
|---|---|
Use Scenario: Dynamic switching between multiple LTE/5G bands in smartphone transceiver front-end. IC Role / Device Role / Timing Role: Series-connected RF switch controlling signal path between PA output and antenna port. Use Value: Achieves <0.11 dB insertion loss and >12 dB isolation at 1.8 GHz, enabling concurrent multi-band operation without cross-talk. | Use Scenario: Adaptive antenna impedance matching for GPS/GLONASS and cellular diversity antennas in vehicle-mounted units. IC Role / Device Role / Timing Role: Bias-controlled tuning element adjusting RF path reactance in response to environmental conditions. Use Value: Maintains VSWR <2.0 across −40 °C to +85 °C using AEC-Q101-qualified thermal stability and low-τrr switching. |
| Wi-Fi 6 Band Selection | ISM-Band IoT Transceiver Switching |
Use Scenario: Selecting between 2.4 GHz and 5 GHz Wi-Fi channels in dual-band access point RF front-end. IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) switch core in discrete implementation with external control logic. Use Value: Delivers 17.9 dB isolation at 0.9 GHz and sub-0.15 dB loss at 2.4 GHz, meeting IEEE 802.11ax coexistence requirements. | Use Scenario: Time-multiplexed TX/RX path selection in sub-GHz LoRaWAN gateways operating at 868/915 MHz. IC Role / Device Role / Timing Role: High-reliability RF switch toggling between transceiver IC and external antenna during packet transmission. Use Value: Supports 100 mA DC handling and 150 °C junction temperature, ensuring robustness in unventilated industrial enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PIN diode RF switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SKY13353-374LF | Higher capacitance (0.35 pF), integrated bias network, 6-pin QFN package | Designed for monolithic SPDT use; requires no external DC blocking capacitors | Preferred when board space allows QFN and system-level integration simplifies bias design |
| MA4P7472F-1072T | Lower forward resistance (0.8 Ω), higher max IF (200 mA), TO-236 package | Optimized for high-power RF switching; larger footprint and higher thermal mass | Chosen for base station subsystems needing >100 mA continuous forward current capability |
Compared with SKY13353-374LF and MA4P7472F-1072T, BAR 63-02V E6327 offers the smallest footprint (SOD323), lowest cost per unit, and AEC-Q101 qualification - making it optimal for space-constrained, automotive-grade, and high-volume consumer RF modules where discrete bias control is already implemented.
Availability
BAR 63-02V E6327 is available at Aetrix Electronics and suitable for cellular front-end switching, automotive telematics antenna tuning, and Wi-Fi 6 band selection requiring stable component supply across production lifecycles.
Supply support for BAR 63-02V E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
BAR 63-02V E6327 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for RF signal routing in wireless infrastructure, mobile devices, and automotive connectivity systems.
FAQ
What is the maximum RF frequency supported by BAR 63-02V E6327?
The device is characterized and specified for operation up to 3 GHz, with measured isolation and insertion loss data provided at 0.9 GHz, 1.8 GHz, and 2.45 GHz. Performance remains effective through the entire LTE and Wi-Fi 5/6 bands, though insertion loss increases gradually above 2.4 GHz due to package parasitics.
Can BAR 63-02V E6327 be used in shunt configuration?
No - BAR 63-02V E6327 is configured as a single-diode in series topology (anode-to-cathode path), not a common-cathode or common-anode pair. Its datasheet specifies only series-switching parameters (e.g., CT, rf, IL); shunt use would require different capacitance and layout trade-offs not validated for this part.
What is the meaning of "E6327" in the full part number?
E6327 is Infineon's internal tape-and-reel packaging code indicating 3,000 units per reel, 12 mm tape width, and moisture sensitivity level 1 (MSL-1), compliant with JEDEC J-STD-020. It does not affect electrical specifications but defines handling and storage requirements.
How does BAR 63-02V E6327 differ from BAR 63-02W?
BAR 63-02V uses SOD323 packaging with 140 K/W thermal resistance and AEC-Q101 qualification; BAR 63-02W uses SC79 packaging with 155 K/W thermal resistance and lacks AEC-Q101 validation. Both share identical electrical specs, but BAR 63-02V is preferred for automotive applications requiring certified reliability.
BAR 63-02V E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-79, SOD-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 5V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SC79-2
BAR 63-02V E6327 FAQ
1.How can I place an order for BAR 63-02V E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 63-02V E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 63-02V E6327 reliable?
The price and inventory of BAR 63-02V E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 63-02V E6327 is usually 5 days.
3.What payment methods are accepted for BAR 63-02V E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 63-02V E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 63-02V E6327?
BAR 63-02V E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 63-02V E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 63-02V E6327?
For technical support, including BAR 63-02V E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 63-02V E6327 requirements.
6.How does Aetrix verify that BAR 63-02V E6327 is sourced from the original manufacturer or authorized distributors?
All BAR 63-02V E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 63-02V E6327 meets industry standards.
7.What is the process for return or replacement of BAR 63-02V E6327?
All BAR 63-02V E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 63-02V E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 63-02V E6327 part is unused and in its original packaging.
Return procedure for BAR 63-02V E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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