Infineon Technologies BAR6302VH6327XTSA1

Overview

BAR6302VH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.21 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and 17.9 dB isolation at 0.9 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6302VH6327XTSA1 datasheet, BAR6302VH6327XTSA1 pinout, BAR6302VH6327XTSA1 application, or BAR6302VH6327XTSA1 equivalent, key selection criteria include RF insertion loss ≤0.15 dB at 1.8 GHz, reverse voltage rating of 50 V, thermal resistance ≤140 K/W, and SOD323 package compatibility with high-density RF PCB layouts.

Technical Context

This PIN diode operates as a voltage-controlled RF series switch, leveraging its low-charge-carrier lifetime (75 ns) and narrow I-region width (4.5 µm) to enable fast turn-on/turn-off transitions. Its series configuration supports bidirectional RF signal routing without polarity constraints.

Designed for operation up to 3 GHz, it maintains stable RF performance across DC–1.8 GHz via low parasitic inductance (0.6 nH) and minimal capacitance variation with reverse bias - critical for LTE Band 7/40/41 and Wi-Fi 2.4 GHz front-end switching.

Key Specifications

Pinout & Package

BAR6302VH6327XTSA1 is housed in a SOD323 surface-mount package (2.1 mm × 1.3 mm × 0.9 mm), leadless, single-diode configuration with cathode marked by bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SMV1232-079LF and BAP64-03W, BAR6302VH6327XTSA1 delivers the lowest combined CT/rf product (0.25 pF·Ω) in SOD323, making it optimal for high-isolation, low-loss LTE/Wi-Fi front-end switching where thermal margin and automotive qualification are required.

Availability

BAR6302VH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, Wi-Fi antenna diversity systems, automotive telematics units, and ISM band transceiver designs requiring stable component supply across production lifecycles.

Supply support for BAR6302VH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's BAR63 family of high-frequency PIN diodes, engineered specifically for low-loss, high-isolation RF switching in mobile and automotive wireless infrastructure.

FAQ

What is the maximum RF frequency supported by BAR6302VH6327XTSA1?

BAR6302VH6327XTSA1 is characterized for operation up to 3 GHz, with verified RF performance including 12.3 dB isolation at 1.8 GHz and 10 dB isolation at 2.45 GHz. Its 0.21 pF capacitance and 1.2 Ω forward resistance maintain usable insertion loss and isolation through the entire 2.4 GHz ISM band and LTE Band 41 (2.496–2.69 GHz).

Is BAR6302VH6327XTSA1 suitable for automotive applications?

Yes - BAR6302VH6327XTSA1 is explicitly qualified to AEC-Q101 for stress testing including temperature cycling, humidity bias, and mechanical shock. It is rated for operation from −55 °C to +125 °C and supports junction temperatures up to 150 °C, meeting requirements for under-dash telematics and V2X antenna switching modules.

How does the SOD323 package affect PCB layout for RF performance?

The SOD323 package (2.1 × 1.3 mm) minimizes parasitic pad inductance and trace coupling when mounted with symmetric 0.3 mm wide RF traces and ground vias within 0.5 mm of each pad. Its 0.6 nH series inductance is tightly controlled via standardized land pattern IPC-7351B SOIC120, ensuring repeatable S-parameter behavior across production batches.

Can BAR6302VH6327XTSA1 be used in shunt configuration?

No - BAR6302VH6327XTSA1 is specified and characterized only for series configuration per datasheet Figure 1 and isolation/insertion loss test conditions. Its terminal assignment (anode/cathode) and internal structure are optimized for series-switch topology; shunt use would violate thermal derating limits and degrade isolation due to uncharacterized parasitic coupling paths.