Infineon Technologies BAR6302WH6327XTSA1

Overview

BAR6302WH6327XTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.21 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz - deployed in cellular front-end modules and antenna tuning circuits.

For engineers reviewing the BAR6302WH6327XTSA1 datasheet, BAR6302WH6327XTSA1 pinout, BAR6302WH6327XTSA1 application, or BAR6302WH6327XTSA1 equivalent, key selection criteria include RF isolation above 12.3 dB at 1.8 GHz, reverse voltage rating of 50 V, thermal resistance ≤140 K/W, and SOD323 package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode operates as a voltage-controlled RF switch in series topology, where forward bias reduces series impedance (<1.2 Ω) to pass RF signals with minimal loss, while reverse bias maximizes off-state isolation (>12 dB up to 1.8 GHz) via low junction capacitance (≤0.21 pF) and high reverse parallel resistance (≥500 kΩ at 100 MHz).

Designed for DC–3 GHz operation, it leverages a 4.5 µm I-region width to balance charge carrier lifetime (75 ns typ.) and switching speed, enabling fast T/R switching in LTE/WiFi transceivers without compromising linearity or harmonic generation.

Key Specifications

Pinout & Package

BAR6302WH6327XTSA1 is housed in an SOD323 (SC-76) surface-mount plastic package, measuring 1.7 mm × 1.25 mm × 0.95 mm, with gull-wing leads and RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SMV1232-079LF and BAP64-03W, BAR6302WH6327XTSA1 delivers superior 1.8 GHz isolation and lower insertion loss in compact SOD323 layout, making it optimal for space-constrained LTE/WiFi coexistence designs where RF performance outweighs bias leakage or power-handling needs.

Availability

BAR6302WH6327XTSA1 is available at Aetrix Electronics and suitable for cellular front-end modules, WiFi antenna tuning circuits, automotive telematics RF subsystems, and GNSS band-select routing requiring stable component supply across industrial and automotive production cycles.

Supply support for BAR6302WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with leadership in high-reliability discrete devices and embedded security solutions.

BAR6302WH6327XTSA1 belongs to Infineon's BAR63 family of AEC-Q101-qualified PIN diodes engineered specifically for high-isolation, low-loss RF switching in automotive infotainment, telematics, and wireless connectivity modules.

FAQ

What is the maximum RF frequency supported by BAR6302WH6327XTSA1?

BAR6302WH6327XTSA1 is characterized up to 3 GHz, with verified performance metrics including 12.3 dB isolation at 1.8 GHz and 10 dB isolation at 2.45 GHz. Its 0.21 pF capacitance and 1.2 Ω forward resistance maintain usable insertion loss and isolation through the entire LTE and WiFi 2.4 GHz bands.

Is BAR6302WH6327XTSA1 suitable for automotive applications?

Yes - BAR6302WH6327XTSA1 is explicitly qualified to AEC-Q101 Rev D, with guaranteed operation from −55 °C to +125 °C ambient and junction temperature limits up to 150 °C. It is used in automotive infotainment and V2X modules requiring robust RF switching under thermal stress.

How does the SOD323 package affect RF layout?

The SOD323 footprint (1.7 × 1.25 mm) minimizes parasitic inductance and capacitance, supporting controlled-impedance 50 Ω traces. Its gull-wing leads allow direct placement adjacent to RF filters or PAs without stubs, and its low profile (0.95 mm height) avoids interference with shield cans in dense RF modules.

Can BAR6302WH6327XTSA1 be used in shunt configuration?

No - BAR6302WH6327XTSA1 is specified and characterized only for series configuration (per datasheet Figure 1 and "BAR63-02W" marking). Its low capacitance and optimized I-region are tuned for series-switch insertion loss and isolation; shunt use would yield insufficient isolation due to lack of common-cathode/anode structure.