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Infineon Technologies BAR 63-03W E6433
- Part No.:
- BAR 63-03W E6433
- Manufacturer:
- Infineon Technologies
- Category:
- RF Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAR 63-03W E6433.pdf
- Description:
- RF DIODE PIN 50V 250MW SOD323-2
- Quantity:
- Payment:
- Shipping:
Inventory:4,439
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Product details
Overview
BAR 63-03W E6433 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 100 MHz, 1.2 Ω forward resistance at 100 MHz/5 mA, and 50 V reverse voltage rating. It operates up to 3 GHz with insertion loss ≤0.11 dB at 1.8 GHz (IF = 5 mA), and is qualified per AEC-Q101 for automotive RF front-end modules.
For engineers reviewing the BAR 63-03W E6433 datasheet, BAR 63-03W E6433 pinout, BAR 63-03W E6433 application, or BAR 63-03W E6433 equivalent, key selection criteria include RF isolation at 1.8 GHz, low-series-inductance SOD323 package performance, thermal resistance (RthJS = 155 K/W), and AEC-Q101 qualification status for harsh-environment RF switching.
Technical Context
This PIN diode functions as a voltage-controlled RF series switch where forward bias reduces series impedance (<1.2 Ω) while reverse bias maximizes isolation (>12.3 dB at 1.8 GHz). Its I-region width of 4.5 µm enables fast carrier lifetime (75 ns) and stable capacitance across 0–35 V reverse bias.
The device uses a single-diode, leadless SOD323 package with 1.8 nH series inductance, optimized for 50 Ω impedance-matched RF paths. Thermal design must account for junction-to-solder-point resistance of 155 K/W and maximum junction temperature of 150 °C under continuous 100 mA forward current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 50 V - supports RF blocking in cellular band-switching circuits without breakdown |
| Capacitance (CT) | 0.3 pF @ 100 MHz, VR = 0 V - enables >12 dB isolation at 1.8 GHz in antenna tuning paths |
| Forward Resistance (rf) | 1.2 Ω @ 100 MHz, IF = 5 mA - ensures <0.11 dB insertion loss in LTE/5G front-end switches |
| Charge Carrier Lifetime (τrr) | 75 ns - allows sub-100 ns switching transitions for TDD-based RF time-division systems |
| Thermal Resistance (RthJS) | 155 K/W - requires board-level thermal relief for sustained 100 mA operation above 85 °C ambient |
| Isolation (ISO) | 12.3 dB @ 1.8 GHz, VR = 0 V - meets minimum rejection requirement for Wi-Fi coexistence filtering |
| Insertion Loss (IL) | 0.11 dB @ 1.8 GHz, IF = 5 mA - preserves signal integrity in high-efficiency PA output switching |
Pinout & Package
BAR 63-03W E6433 is housed in a surface-mount SOD323 package (2.0 × 1.25 × 0.9 mm), leadless, single-diode configuration with cathode and anode terminals exposed on opposite ends of the molded body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward-bias input terminal | Connects to RF source side in series switch topology; controls conduction path when biased ≥0.95 V |
| Cathode (K) | Forward-bias return / reverse-bias blocking node | Connects to RF load side; provides high-impedance path during reverse bias (VR ≤ 50 V) |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive RF modules operating from −55 °C to +125 °C ambient |
| Low series inductance | 1.8 nH - minimizes self-resonance shift and maintains broadband matching up to 3 GHz |
| Pb-free / RoHS compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (peak 260 °C) |
| Stable capacitance vs. voltage | CT varies <10% from 0–35 V reverse bias - ensures consistent isolation across variable DC bias conditions |
Applications
| Cellular Antenna Switching | Wi-Fi 2.4/5 GHz Front-End |
|---|---|
Use Scenario: Dynamic switching between main/diversity antennas in LTE/5G handsets. IC Role / Device Role / Timing Role: Series-connected PIN diode controlling RF path continuity in TDD/FDD duplexers. Use Value: 0.11 dB insertion loss at 1.8 GHz preserves receiver sensitivity; 12.3 dB isolation prevents cross-band interference. | Use Scenario: Band-select switching in dual-band Wi-Fi 6/6E access point RF front-ends. IC Role / Device Role / Timing Role: High-isolation series switch enabling concurrent 2.4 GHz and 5 GHz transmit/receive paths. Use Value: 0.3 pF capacitance and 1.2 Ω forward resistance maintain impedance match across 2.4–5.8 GHz bands. |
| Automotive Radar Transmit/Receive Switch | GNSS L1/L5 Signal Path Protection |
Use Scenario: Fast T/R switching in 77 GHz ADAS radar transceivers using down-converted IF paths. IC Role / Device Role / Timing Role: Low-τrr (75 ns) PIN diode enabling microsecond-scale TDD timing control in FMCW radar IF stages. Use Value: AEC-Q101 qualification ensures reliability under vibration and thermal cycling; RthJS = 155 K/W supports sustained 100 mA bias. | Use Scenario: ESD-sensitive GNSS antenna feed protection in automotive infotainment head units. IC Role / Device Role / Timing Role: Reverse-biased shunt limiter protecting LNA input while maintaining <0.3 pF parasitic loading. Use Value: 10 nA max reverse leakage at 35 V avoids DC path distortion; 50 V VR rating covers transient surges per ISO 10605. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF PIN diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MACOM MADP-000907-14150T | Higher CT (0.35 pF), lower RthJS (120 K/W), same SOD323 package | Better thermal performance but slightly reduced isolation at 2.4 GHz | Select when board-level thermal management is constrained and 2.4 GHz isolation margin >1 dB is acceptable |
| Skyworks SMS7630-061 | Lower rf (0.8 Ω @ 100 MHz), higher VF (1.1 V typ), SC79 package | Superior insertion loss but incompatible footprint and non-AEC-Q101 qualified | Select for non-automotive, space-constrained designs requiring <0.08 dB IL at 1.8 GHz |
Compared with BAR 63-03W E6433, MADP-000907-14150T trades marginal isolation degradation for improved thermal handling, while SMS7630-061 delivers lower loss in non-automotive layouts but forfeits AEC-Q101 compliance and requires PCB redesign.
Availability
BAR 63-03W E6433 is available at Aetrix Electronics and suitable for cellular antenna switching, Wi-Fi front-end design, automotive radar T/R control, and GNSS signal path protection requiring stable component supply and AEC-Q101 assurance.
Supply support for BAR 63-03W E6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive ICs, with global manufacturing and quality certification to IATF 16949.
BAR 63-03W E6433 belongs to Infineon's high-frequency PIN diode product line, engineered specifically for automotive-grade RF switching in 5G, Wi-Fi 6E, and ADAS radar subsystems.
FAQ
What is the maximum RF frequency supported by BAR 63-03W E6433?
The BAR 63-03W E6433 is characterized and specified for operation up to 3 GHz, with measured isolation and insertion loss data provided at 0.9, 1.8, and 2.45 GHz. Its 0.3 pF capacitance and 1.8 nH series inductance yield a self-resonant frequency beyond 3 GHz, supporting reliable use in LTE Band 40 (2.3 GHz) and 5G n41 (2.5 GHz) applications.
Is BAR 63-03W E6433 suitable for DC blocking in RF signal paths?
No - BAR 63-03W E6433 is a series-switching PIN diode, not a DC-blocking capacitor. It conducts RF when forward-biased and blocks RF when reverse-biased, but does not isolate DC from AC. For DC blocking, a separate coupling capacitor must be used upstream or downstream; this diode controls RF path continuity only.
How does the 155 K/W thermal resistance impact layout design?
The 155 K/W junction-to-solder-point thermal resistance requires at least 20 mm² of 1-oz copper pour connected directly to both anode and cathode pads, with ≥2 thermal vias per pad (0.3 mm diameter, filled), to maintain Tj ≤ 150 °C at 100 mA continuous forward current in 85 °C ambient. Smaller pads or insufficient copper will exceed rated junction temperature.
Does BAR 63-03W E6433 support bidirectional RF switching?
Yes - as a symmetric PIN diode with identical anode/cathode structure, BAR 63-03W E6433 performs identically in either direction when forward-biased. Its 0.3 pF capacitance and 1.2 Ω forward resistance are independent of signal flow direction, making it suitable for bidirectional RF paths such as antenna diversity combiners or T/R duplexers with external bias network control.
BAR 63-03W E6433 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Type:
- PIN - Single
- Voltage - Peak Reverse (Max):
- 50V
- Current - Max:
- 100 mA
- Capacitance @ Vr, F:
- 0.3pF @ 5V, 1MHz
- Resistance @ If, F:
- 1Ohm @ 10mA, 100MHz
- Power Dissipation (Max):
- 250 mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Supplier Device Package:
- PG-SOD323-3D
BAR 63-03W E6433 FAQ
1.How can I place an order for BAR 63-03W E6433 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAR 63-03W E6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAR 63-03W E6433 reliable?
The price and inventory of BAR 63-03W E6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAR 63-03W E6433 is usually 5 days.
3.What payment methods are accepted for BAR 63-03W E6433?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAR 63-03W E6433 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAR 63-03W E6433?
BAR 63-03W E6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAR 63-03W E6433 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAR 63-03W E6433?
For technical support, including BAR 63-03W E6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAR 63-03W E6433 requirements.
6.How does Aetrix verify that BAR 63-03W E6433 is sourced from the original manufacturer or authorized distributors?
All BAR 63-03W E6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAR 63-03W E6433 meets industry standards.
7.What is the process for return or replacement of BAR 63-03W E6433?
All BAR 63-03W E6433 units undergo pre-shipment inspection (PSI). If there is an issue with BAR 63-03W E6433, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAR 63-03W E6433 part is unused and in its original packaging.
Return procedure for BAR 63-03W E6433:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAR 63-03W E6433 Tags
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