Infineon Technologies BAR6304E6327HTSA1

Overview

BAR6304E6327HTSA1 from Infineon Technologies is a silicon PIN diode optimized for high-speed RF signal switching in series configuration, featuring 0.3 pF capacitance at 5 V/1 MHz, 1.2 Ω forward resistance at 5 mA/100 MHz, and insertion loss of 0.11 dB at 1.8 GHz with 5 mA bias. It operates up to 3 GHz with 50 V reverse voltage rating and is qualified per AEC-Q101 for automotive RF front-end modules.

For engineers reviewing the BAR6304E6327HTSA1 datasheet, BAR6304E6327HTSA1 pinout, BAR6304E6327HTSA1 application, or BAR6304E6327HTSA1 equivalent, key selection criteria include RF isolation at 1.8 GHz, low insertion loss under 5–10 mA DC bias, thermal resistance (RthJS ≤ 380 K/W), and SOD323 package compatibility with high-frequency PCB layout constraints.

Technical Context

This PIN diode functions as a voltage-controlled RF switch where forward bias reduces series impedance (<1.2 Ω) for low-loss signal path conduction, while reverse bias maximizes off-state isolation (>12.3 dB at 1.8 GHz) via ultra-low junction capacitance (≤0.3 pF). Its I-region width of 4.5 µm enables fast carrier lifetime (75 ns) and stable performance across 0.9–2.45 GHz bands.

The device uses a single-diode, series-connected topology in SOD323 package with anode and cathode terminals only-no integrated matching or ESD protection. Thermal derating begins at TS = 55°C, requiring careful power dissipation management (Ptot = 250 mW) in compact RF modules.

Key Specifications

Pinout & Package

SOD323 plastic package: 2-terminal, leadless, single-diode configuration with anode (A) and cathode (K) exposed on opposite ends of the molded body. Dimensions: 1.7 × 1.25 × 0.95 mm (L × W × H), cathode marked by band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PIN diode RF switching applications.

Compared with SMV1232-079LF and BAP64-03W, BAR6304E6327HTSA1 uniquely balances 50 V VR rating, AEC-Q101 compliance, and 0.3 pF/1.2 Ω RF performance in SOD323 - making it optimal for automotive-grade, wideband RF switching where reliability and loss budget are co-constrained.

Availability

BAR6304E6327HTSA1 is available at Aetrix Electronics and suitable for cellular front-end switching, GPS antenna tuning, Wi-Fi 6 FEMs, and automotive radar pre-driver circuits requiring stable component supply across production lifecycles.

Supply support for BAR6304E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, RF, and automotive electronics, with global manufacturing and R&D centers.

BAR6304E6327HTSA1 belongs to the BAR63 family of high-frequency PIN diodes designed specifically for automotive-qualified RF signal routing and antenna tuning in 0.9–3 GHz wireless systems.

FAQ

What is the maximum RF frequency supported by BAR6304E6327HTSA1?

The BAR6304E6327HTSA1 is characterized up to 3 GHz, with verified isolation (12.3 dB) and insertion loss (0.11 dB) at 1.8 GHz and usable performance confirmed at 2.45 GHz. Its 0.3 pF capacitance and 1.2 Ω forward resistance sustain effective switching behavior through the upper Wi-Fi and Bluetooth bands.

Does BAR6304E6327HTSA1 require external bias circuitry?

Yes - it requires a DC bias network to set forward or reverse state: typically a series resistor (1–10 kΩ) and RF choke to isolate DC from the RF path. No integrated bias circuitry exists; design must ensure IF ≤ 100 mA and avoid exceeding 250 mW total dissipation under thermal derating conditions.

How does the SOD323 package affect RF layout?

The SOD323's 1.7 × 1.25 mm footprint demands precise 50 Ω microstrip routing with minimized stub length (<0.5 mm) and ground via placement within 0.3 mm of each terminal. Pad geometry must match JEDEC MO-203AA to prevent solder wicking and parasitic inductance that degrades >1 GHz isolation.

Is BAR6304E6327HTSA1 suitable for pulsed RF operation?

Yes - its 75 ns carrier lifetime and permissible pulse load curves (per datasheet Fig. 6–7) support repetitive RF pulses with duty cycles ≤0.05 and pulse widths ≥1 µs. Peak forward current may reach 500 mA for tp = 10 µs, provided average power remains within 250 mW limits and junction temperature stays below 150 °C.